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giovanni mascali
giovanni mascali
Associate Professor, Università della Calabria
Bestätigte E-Mail-Adresse bei unical.it - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Recent developments in hydrodynamical modeling of semiconductors (2003) 1: 54 in Mathematical Problems in Semiconductor Physics
AM Anile, G Mascali, V Romano
Lecture Notes in Mathematics, 2003
57*2003
Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
VD Camiola, G Mascali, V Romano
Continuum Mechanics and Thermodynamics 24 (4), 417-436, 2012
432012
A hydrodynamic model for silicon semiconductors including crystal heating
G Mascali
European Journal of Applied Mathematics 26 (4), 477-496, 2015
372015
Exact maximum entropy closure of the hydrodynamical model for Si semiconductors: The 8-moment case
S La Rosa, G Mascali, V Romano
SIAM Journal on Applied Mathematics 70 (3), 710-734, 2009
372009
Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle
G Mascali, V Romano
Continuum Mechanics and Thermodynamics 14 (5), 405-423, 2002
362002
A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
G Mascali, V Romano
Mathematical and Computer Modelling 55 (3-4), 1003-1020, 2012
342012
Charge transport in graphene including thermal effects
G Mascali, V Romano
SIAM Journal on Applied Mathematics 77 (2), 593-613, 2017
332017
A hydrodynamic model for covalent semiconductors with applications to GaN and SiC
G Alì, G Mascali, V Romano, RC Torcasio
Acta applicandae mathematicae 122 (1), 335-348, 2012
332012
Exploitation of the maximum entropy principle in mathematical modeling of charge transport in semiconductors
G Mascali, V Romano
Entropy 19 (1), 36, 2017
292017
Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
VD Camiola, G Mascali, V Romano
Mathematical and Computer Modelling 58 (1-2), 321-343, 2013
292013
A hydrodynamical model for holes in silicon semiconductors: The case of non-parabolic warped bands
G Mascali, V Romano
Mathematical and computer modelling 53 (1-2), 213-229, 2011
272011
Monte Carlo analysis of thermal effects in monolayer graphene
M Coco, G Mascali, V Romano
Journal of Computational and Theoretical Transport 45 (7), 540-553, 2016
262016
Hydrodynamic subband model for semiconductors based on the maximum entropy principle
G Mascali, V Romano
Il nuovo cimento C 33 (1), 155-163, 2010
262010
Si and GaAs mobility derived from a hydrodynamical model for semiconductors based on the maximum entropy principle
G Mascali, V Romano
Physica A: Statistical Mechanics and its Applications 352 (2-4), 459-476, 2005
262005
A new formula for thermal conductivity based on a hierarchy of hydrodynamical models
G Mascali
Journal of Statistical Physics 163 (5), 1268-1284, 2016
222016
Charge transport and mobility in monolayer graphene
A Majorana, G Mascali, V Romano
Journal of Mathematics in Industry 7 (1), 1-13, 2016
212016
Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle
G Mascali, V Romano
COMPEL-The international journal for computation and mathematics in …, 2005
212005
MEP parabolic hydrodynamical model for holes in silicon semiconductors
G Mascali, V Romano, JM Sellier
Nuovo Cimento B Serie 120 (2), 197, 2005
192005
Maximum entropy principle in relativistic radiation hydrodynamics
G Mascali, V Romano
Annales de l'IHP Physique théorique 67 (2), 123-144, 1997
171997
A non-linear determination of the distribution function of degenerate gases with an application to semiconductors
G Mascali, M Trovato
Physica A: Statistical Mechanics and its Applications 310 (1-2), 121-138, 2002
162002
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