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Jean-Francois Lelièvre
Jean-Francois Lelièvre
Unknown affiliation
Verified email at insa-lyon.fr
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Cited by
Cited by
Year
Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching
P Papet, O Nichiporuk, A Kaminski, Y Rozier, J Kraiem, JF Lelievre, ...
Solar Energy Materials and Solar Cells 90 (15), 2319-2328, 2006
4122006
Study of the composition of hydrogenated silicon nitride SiNx: H for efficient surface and bulk passivation of silicon
JF Lelièvre, E Fourmond, A Kaminski, O Palais, D Ballutaud, M Lemiti
Solar Energy Materials and Solar Cells 93 (8), 1281-1289, 2009
2102009
Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation
J Dupuis, E Fourmond, JF Lelièvre, D Ballutaud, M Lemiti
Thin Solid Films 516 (20), 6954-6958, 2008
942008
Acceptable contamination levels in solar grade silicon: From feedstock to solar cell
J Hofstetter, JF Lelièvre, C Del Cañizo, A Luque
Materials Science and Engineering: B 159, 299-304, 2009
892009
Impurity‐to‐efficiency simulator: predictive simulation of silicon solar cell performance based on iron content and distribution
J Hofstetter, DP Fenning, MI Bertoni, JF Lelièvre, C Cañizo1, T Buonassisi
Progress in photovoltaics: Research and applications 19 (4), 487-497, 2011
622011
Iron distribution in silicon after solar cell processing: Synchrotron analysis and predictive modeling
DP Fenning, J Hofstetter, MI Bertoni, S Hudelson, M Rinio, JF Lelievre, ...
Applied Physics Letters 98 (16), 2011
522011
About the origin of low wafer performance and crystal defect generation on seed‐cast growth of industrial mono‐like silicon ingots
I Guerrero, V Parra, T Carballo, A Black, M Miranda, D Cancillo, ...
Progress in Photovoltaics: Research and Applications 22 (8), 923-932, 2014
482014
Elaboration de SiNx: H par PECVD: optimisation des propriétés optiques, passivantes et structurales pour applications photovoltaïques
JF Lelièvre
Institut National des Sciences Appliquées de Lyon, 2007
482007
Efficient silicon nitride SiNx:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells
JF Lelièvre, B Kafle, P Saint‐Cast, P Brunet, R Magnan, E Hernandez, ...
Progress in Photovoltaics: Research and Applications 27 (11), 1007-1019, 2019
472019
Investigation of graded index SiOxNy antireflection coating for silicon solar cell manufacturing
M Lipiński, A Kaminski, JF Lelièvre, M Lemiti, E Fourmond, P Zięba
physica status solidi c 4 (4), 1566-1569, 2007
382007
Correlation of optical and photoluminescence properties in amorphous SiNx: H thin films deposited by PECVD or UVCVD
JF Lelievre, J De la Torre, A Kaminski, G Bremond, M Lemiti, ...
Thin Solid Films 511, 103-107, 2006
362006
Dissolution and gettering of iron during contact co-firing
JF Lelievre, J Hofstetter, A Peral, I Hoces, F Recart, C Del Cañizo
Energy Procedia 8, 257-262, 2011
352011
Atmospheric Pressure Radio‐Frequency DBD Deposition of Dense Silicon Dioxide Thin Film
R Bazinette, J Paillol, JF Lelièvre, F Massines
Plasma Processes and Polymers 13 (10), 1015-1024, 2016
282016
Hydrogenated Silicon Nitride SiNx:H Deposited by Dielectric Barrier Discharge for Photovoltaics
F Massines, J Silva, JF Lelièvre, R Bazinette, J Vallade, P Lecouvreur, ...
Plasma Processes and Polymers 13 (1), 170-183, 2016
222016
Desert label development for improved reliability and durability of photovoltaic modules in harsh desert conditions
JF Lelièvre, R Couderc, N Pinochet, L Sicot, D Munoz, R Kopecek, ...
Solar Energy Materials and Solar Cells 236, 111508, 2022
202022
Cannizo and C, Luque L 2009 Mater
J Hofstetter, JF Lelièvre
Sci. Eng. B 159, 299, 0
20
Fabrication of Si tunnel diodes for c-Si based tandem solar cells using proximity rapid thermal diffusion
A Fave, JF Lelièvre, T Gallet, Q Su, M Lemiti
Energy Procedia 124, 577-583, 2017
182017
Influence of the discharge mode on the optical and passivation properties of SiNx: H deposited by PECVD at atmospheric pressure
R Bazinette, JF Lelièvre, L Gaudy, F Massines
Energy Procedia 92, 309-316, 2016
172016
Impact of a metal–organic vapor phase epitaxy environment on silicon substrates for III–V-on-Si multijunction solar cells
E García-Tabarés, I García, JF Lelievre, I Rey-Stolle
Japanese Journal of Applied Physics 51 (10S), 10ND05, 2012
162012
Engineering metal precipitate size distributions to enhance gettering in multicrystalline silicon
J Hofstetter, DP Fenning, JF Lelièvre, C del Cañizo, T Buonassisi
physica status solidi (a) 209 (10), 1861-1865, 2012
152012
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