2-D physics-based compact DC modeling of double-gate tunnel-FETs F Horst, A Farokhnejad, QT Zhao, B Iniguez, A Kloes IEEE Transactions on Electron Devices 66 (1), 132-138, 2018 | 34 | 2018 |
Advanced analytical modeling of double-gate Tunnel-FETs–A performance evaluation M Graef, F Hosenfeld, F Horst, A Farokhnejad, F Hain, B Iñíguez, A Kloes Solid-State Electronics 141, 31-39, 2018 | 12 | 2018 |
Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation F Horst, M Graef, F Hosenfeld, A Farokhnejad, F Hain, GV Luong, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 456-459, 2016 | 12 | 2016 |
Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts A Farokhnejad, M Schwarz, F Horst, B Iñíguez, F Lime, A Kloes Solid-State Electronics 159, 191-196, 2019 | 8 | 2019 |
Closed-form modeling approach of trap-assisted tunneling current for use in compact TFET models F Horst, A Farokhnejad, B Iñíguez, A Kloes 2019 MIXDES-26th International Conference" Mixed Design of Integrated …, 2019 | 5 | 2019 |
An area equivalent WKB approach to calculate the B2B tunneling probability for a numerical robust implementation in TFET compact models F Horst, A Parokhnejad, B Iñíguez, A Kloes 2018 25th International Conference" Mixed Design of Integrated Circuits and …, 2018 | 5 | 2018 |
Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs M Graef, F Hain, F Hosenfeld, F Horst, A Farokhnejad, A Kloes, B Iñíguez 2016 MIXDES-23rd International Conference Mixed Design of Integrated …, 2016 | 5 | 2016 |
Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model A Farokhnejad, F Horst, B Iñíguez, F Lime, A Kloes ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 4 | 2019 |
Static noise margin analysis of 8T TFET SRAM cells using a 2D compact model adapted to measurement data of fabricated TFET devices F Horst, M Graef, F Hosenfeld, A Farokhnejad, GV Luong, QT Zhao, ... 2017 Joint International EUROSOI Workshop and International Conference on …, 2017 | 4 | 2017 |
Compact modeling of intrinsic capacitances in double-gate tunnel-FETs A Farokhnejad, M Graef, F Horst, C Liu, QT Zhao, B Iñíguez, F Lime, ... 2017 Joint International EUROSOI Workshop and International Conference on …, 2017 | 4 | 2017 |
Numerical analysis and analytical modeling of RDF in DG Tunnel-FETs M Graef, F Hain, F Hosenfeld, F Horst, A Farokhnejad, B Iñiguez, A Kloes 2016 Joint International EUROSOI Workshop and International Conference on …, 2016 | 4 | 2016 |
Effect of Schottky barrier contacts on measured capacitances in tunnel-fets A Farokhnejad, M Schwarz, M Graef, F Horst, B Iñíguez, F Lime, A Kloes 2018 Joint International EUROSOI Workshop and International Conference on …, 2018 | 3 | 2018 |
Area Equivalent WKB Compact Modeling Approach for Tunneling Probability in Hetero-Junction TFETs Including Ambipolar Behavior F Horst, A Farokhnejad, G Darbandy, B Iñíguez, A Kloes International Journal of Microelectronics and Computer Science (IJMCS) 9 (2 …, 2018 | 3 | 2018 |
A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations F Hosenfeld, F Horst, B Iñíguez, F Lime, A Kloes Solid-State Electronics 137, 70-79, 2017 | 2 | 2017 |
Non-iterative NEGF based model for band-to-band tunneling current in DG TFETs F Hosenfeld, F Horst, A Kloes, B Iñíguez, F Lime 2017 MIXDES-24th International Conference" Mixed Design of Integrated …, 2017 | 2 | 2017 |
Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs M Graef, F Hain, F Hosenfeld, F Horst, A Farokhnejad, B Iñíguez, A Kloes 2017 MIXDES-24th International Conference" Mixed Design of Integrated …, 2017 | 2 | 2017 |
Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs F Hosenfeld, M Graef, F Horst, A Kloes, B Iñiguez, F Lime 2016 MIXDES-23rd International Conference Mixed Design of Integrated …, 2016 | 2 | 2016 |
Rapid NEGF-based calculation of ballistic current in ultra-short DG MOSFETs for circuit simulation F Hosenfeld, F Horst, M Graef, A Farokhnejad, A Kloes, B Iñíguez, F Lime International Journal of Microelectronics and Computer Science 7 (2), 2016 | 2 | 2016 |
Compact dc modeling of tunnel-fets F Horst Universitat Rovira i Virgili, 2019 | 1 | 2019 |
Impact of On-Current on the Static and Dynamic Performance of TFET Inverters A Farokhnejad, F Horst, A Kloes, B Iñíguez, F Lime 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2019 | | 2019 |