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Fabian Horst
Fabian Horst
NanoP, TH Mittelhessen
Verified email at ei.thm.de
Title
Cited by
Cited by
Year
2-D physics-based compact DC modeling of double-gate tunnel-FETs
F Horst, A Farokhnejad, QT Zhao, B Iniguez, A Kloes
IEEE Transactions on Electron Devices 66 (1), 132-138, 2018
342018
Advanced analytical modeling of double-gate Tunnel-FETs–A performance evaluation
M Graef, F Hosenfeld, F Horst, A Farokhnejad, F Hain, B Iñíguez, A Kloes
Solid-State Electronics 141, 31-39, 2018
122018
Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation
F Horst, M Graef, F Hosenfeld, A Farokhnejad, F Hain, GV Luong, ...
2016 46th European Solid-State Device Research Conference (ESSDERC), 456-459, 2016
122016
Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts
A Farokhnejad, M Schwarz, F Horst, B Iñíguez, F Lime, A Kloes
Solid-State Electronics 159, 191-196, 2019
82019
Closed-form modeling approach of trap-assisted tunneling current for use in compact TFET models
F Horst, A Farokhnejad, B Iñíguez, A Kloes
2019 MIXDES-26th International Conference" Mixed Design of Integrated …, 2019
52019
An area equivalent WKB approach to calculate the B2B tunneling probability for a numerical robust implementation in TFET compact models
F Horst, A Parokhnejad, B Iñíguez, A Kloes
2018 25th International Conference" Mixed Design of Integrated Circuits and …, 2018
52018
Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs
M Graef, F Hain, F Hosenfeld, F Horst, A Farokhnejad, A Kloes, B Iñíguez
2016 MIXDES-23rd International Conference Mixed Design of Integrated …, 2016
52016
Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model
A Farokhnejad, F Horst, B Iñíguez, F Lime, A Kloes
ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019
42019
Static noise margin analysis of 8T TFET SRAM cells using a 2D compact model adapted to measurement data of fabricated TFET devices
F Horst, M Graef, F Hosenfeld, A Farokhnejad, GV Luong, QT Zhao, ...
2017 Joint International EUROSOI Workshop and International Conference on …, 2017
42017
Compact modeling of intrinsic capacitances in double-gate tunnel-FETs
A Farokhnejad, M Graef, F Horst, C Liu, QT Zhao, B Iñíguez, F Lime, ...
2017 Joint International EUROSOI Workshop and International Conference on …, 2017
42017
Numerical analysis and analytical modeling of RDF in DG Tunnel-FETs
M Graef, F Hain, F Hosenfeld, F Horst, A Farokhnejad, B Iñiguez, A Kloes
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
42016
Effect of Schottky barrier contacts on measured capacitances in tunnel-fets
A Farokhnejad, M Schwarz, M Graef, F Horst, B Iñíguez, F Lime, A Kloes
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
32018
Area Equivalent WKB Compact Modeling Approach for Tunneling Probability in Hetero-Junction TFETs Including Ambipolar Behavior
F Horst, A Farokhnejad, G Darbandy, B Iñíguez, A Kloes
International Journal of Microelectronics and Computer Science (IJMCS) 9 (2 …, 2018
32018
A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations
F Hosenfeld, F Horst, B Iñíguez, F Lime, A Kloes
Solid-State Electronics 137, 70-79, 2017
22017
Non-iterative NEGF based model for band-to-band tunneling current in DG TFETs
F Hosenfeld, F Horst, A Kloes, B Iñíguez, F Lime
2017 MIXDES-24th International Conference" Mixed Design of Integrated …, 2017
22017
Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs
M Graef, F Hain, F Hosenfeld, F Horst, A Farokhnejad, B Iñíguez, A Kloes
2017 MIXDES-24th International Conference" Mixed Design of Integrated …, 2017
22017
Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs
F Hosenfeld, M Graef, F Horst, A Kloes, B Iñiguez, F Lime
2016 MIXDES-23rd International Conference Mixed Design of Integrated …, 2016
22016
Rapid NEGF-based calculation of ballistic current in ultra-short DG MOSFETs for circuit simulation
F Hosenfeld, F Horst, M Graef, A Farokhnejad, A Kloes, B Iñíguez, F Lime
International Journal of Microelectronics and Computer Science 7 (2), 2016
22016
Compact dc modeling of tunnel-fets
F Horst
Universitat Rovira i Virgili, 2019
12019
Impact of On-Current on the Static and Dynamic Performance of TFET Inverters
A Farokhnejad, F Horst, A Kloes, B Iñíguez, F Lime
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2019
2019
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