Follow
Cory Lund
Cory Lund
Verified email at google.com
Title
Cited by
Cited by
Year
In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates
C Gupta, C Lund, SH Chan, A Agarwal, J Liu, Y Enatsu, S Keller, ...
IEEE Electron Device Letters 38 (3), 353-355, 2017
1612017
The physics of recombinations in III-nitride emitters
A David, NG Young, C Lund, MD Craven
ECS Journal of Solid State Science and Technology 9 (1), 016021, 2019
812019
Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)
D Ji, C Gupta, A Agarwal, SH Chan, C Lund, W Li, S Keller, UK Mishra, ...
IEEE Electron Device Letters 39 (5), 711-714, 2018
652018
Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells
K Hestroffer, F Wu, H Li, C Lund, S Keller, JS Speck, UK Mishra
Semiconductor Science and Technology 30 (10), 105015, 2015
632015
Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels
C Gupta, SH Chan, C Lund, A Agarwal, OS Koksaldi, J Liu, Y Enatsu, ...
Applied Physics Express 9 (12), 121001, 2016
592016
Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography
B Bonef, M Catalano, C Lund, SP Denbaars, S Nakamura, UK Mishra, ...
Applied Physics Letters 110 (14), 2017
422017
In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors
X Liu, R Yeluri, J Kim, S Lal, A Raman, C Lund, S Wienecke, J Lu, ...
Applied Physics Letters 103 (5), 2013
352013
Thermal droop in high-quality InGaN LEDs
A David, NG Young, C Lund, MD Craven
Applied Physics Letters 115 (22), 2019
302019
Growth of high purity N-polar (In, Ga) N films
C Lund, S Nakamura, SP DenBaars, UK Mishra, S Keller
Journal of Crystal Growth 464, 127-131, 2017
292017
Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness
M Tahhan, J Nedy, SH Chan, C Lund, H Li, G Gupta, S Keller, U Mishra
Journal of Vacuum Science & Technology A 34 (3), 2016
252016
Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices
C Lund, B Romanczyk, M Catalano, Q Wang, W Li, D DiGiovanni, MJ Kim, ...
Journal of Applied Physics 121 (18), 2017
202017
Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades
K Hestroffer, C Lund, H Li, S Keller, JS Speck, UK Mishra
physica status solidi (b) 253 (4), 626-629, 2016
202016
Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN
C Lund, M Catalano, L Wang, C Wurm, T Mates, M Kim, S Nakamura, ...
Journal of Applied Physics 123 (5), 2018
192018
Compensation between radiative and Auger recombinations in III-nitrides: the scaling law of separated-wavefunction recombinations
A David, NG Young, C Lund, MD Craven
Applied Physics Letters 115 (19), 2019
182019
Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy
K Hestroffer, C Lund, O Koksaldi, H Li, G Schmidt, M Trippel, P Veit, ...
Journal of Crystal Growth 465, 55-59, 2017
182017
InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays
S Keller, C Lund, T Whyland, Y Hu, C Neufeld, S Chan, S Wienecke, F Wu, ...
Semiconductor Science and Technology 30 (10), 105020, 2015
172015
Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates
C Lund, K Hestroffer, N Hatui, S Nakamura, SP DenBaars, UK Mishra, ...
Applied Physics Express 10 (11), 111001, 2017
162017
Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition
CE Reilly, C Lund, S Nakamura, UK Mishra, SP DenBaars, S Keller
Applied Physics Letters 114 (24), 2019
152019
Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD
C Lund, A Agarwal, B Romanczyk, T Mates, S Nakamura, SP DenBaars, ...
Semiconductor Science and Technology 33 (9), 095014, 2018
132018
Performance projection of III‐nitride heterojunction nanowire tunneling field‐effect transistors
W Li, L Cao, C Lund, S Keller, P Fay
physica status solidi (a) 213 (4), 905-908, 2016
132016
The system can't perform the operation now. Try again later.
Articles 1–20