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Ahmet S. Ozcan
Ahmet S. Ozcan
Semiotic AI
Verified email at semiotic.ai
Title
Cited by
Cited by
Year
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
J Bruley, JO Chu, KL Lee, AS Ozcan, PM Solomon, JB Yau
US Patent 10,269,714, 2019
3002019
Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources
Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ...
IEEE Electron Device Letters 31 (7), 731-733, 2010
2792010
An off-normal fibre-like texture in thin films on single-crystal substrates
C Detavernier, AS Özcan, J Jordan-Sweet, EA Stach, J Tersoff, FM Ross, ...
Nature 426 (6967), 641-645, 2003
2342003
Real-time x-ray studies of Mo-seeded Si nanodot formation during ion bombardment
G Ozaydin, AS Özcan, Y Wang, KF Ludwig, H Zhou, RL Headrick, ...
Applied Physics Letters 87 (16), 2005
1552005
Wafer-scale power delivery
CE Cox, H Huels, A Kumar, XH Liu, AS Ozcan, WW Wilcke
US Patent 10,546,809, 2020
86*2020
Strained Si channel MOSFETs with embedded silicon carbon formed by solid phase epitaxy
Y Liu, O Gluschenkov, J Li, A Madan, A Ozcan, B Kim, T Dyer, ...
2007 IEEE Symposium on VLSI Technology, 44-45, 2007
582007
Adsorption kinetics and isotherms of anionic dye of reactive blue 19 from aqueous solutions onto DTMA-sepiolite
A Ozcan, AS Ozcan, O Gok
Hazardous Materials and Wastewater—Treatment, Removal and Analysis, 2007
562007
Wavelength tunability of ion-bombardment-induced ripples on sapphire
H Zhou, Y Wang, L Zhou, RL Headrick, AS Özcan, Y Wang, G Özaydin, ...
Physical Review B 75 (15), 155416, 2007
522007
Ultra low contact resistivities for CMOS beyond 10-nm node
Z Zhang, SO Koswatta, SW Bedell, A Baraskar, M Guillorn, ...
IEEE electron device letters 34 (6), 723-725, 2013
502013
Challenges of nickel silicidation in CMOS technologies
N Breil, C Lavoie, A Ozcan, F Baumann, N Klymko, K Nummy, B Sun, ...
Microelectronic Engineering 137, 79-87, 2015
472015
Complex and incommensurate ordering in Al0. 72Ga0. 28N thin films grown by plasma-assisted molecular beam epitaxy
Y Wang, AS Özcan, KF Ludwig, A Bhattacharyya, TD Moustakas, L Zhou, ...
Applied physics letters 88 (18), 2006
452006
Filopodia: a rapid structural plasticity substrate for fast learning
AS Ozcan
Frontiers in synaptic neuroscience 9, 12, 2017
412017
Contacts in advanced CMOS: History and emerging challenges
C Lavoie, P Adusumilli, AV Carr, JSJ Sweet, AS Ozcan, E Levrau, N Breil, ...
ECS Transactions 77 (5), 59, 2017
352017
Dual Silicide Process Compatible with Replacement-Metal-Gate
E Alptekin, SO Koswatta, C Lavoie, AS Ozcan, KT Schonenberg, ...
US Patent App. 14/010,891, 2014
352014
Texture of tetragonal α− FeSi 2 films on Si (001)
C Detavernier, C Lavoie, J Jordan-Sweet, AS Özcan
Physical Review B 69 (17), 174106, 2004
352004
Material removal process for self-aligned contacts
SK Kanakasabapathy, AS Ozcan
US Patent 9,761,455, 2017
34*2017
Fin field effect transistor with merged metal semiconductor alloy regions
E Alptekin, AM Ozbek, AS Ozcan, Y Wang
US Patent App. 14/482,764, 2015
312015
Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1− xPtx silicide films
Z Zhang, B Yang, Y Zhu, S Gaudet, S Rossnagel, AJ Kellock, A Ozcan, ...
Applied Physics Letters 97 (25), 2010
312010
Interface roughness evolution in sputtered WSi2∕ Si multilayers
YP Wang, H Zhou, L Zhou, RL Headrick, AT Macrander, AS Özcan
Journal of applied physics 101 (2), 2007
312007
Ti and NiPt/Ti liner silicide contacts for advanced technologies
P Adusumilli, E Alptekin, M Raymond, N Breil, F Chafik, C Lavoie, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
302016
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