Nadim Chowdhury
Nadim Chowdhury
MIT, EECS
ยืนยันอีเมลแล้วที่ mit.edu
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The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
2942018
Materials and processing issues in vertical GaN power electronics
J Hu, Y Zhang, M Sun, D Piedra, N Chowdhury, T Palacios
Materials Science in Semiconductor Processing 78, 75-84, 2018
392018
720-V/0.35-mcm2Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers
Y Zhang, M Yuan, N Chowdhury, K Cheng, T Palacios
IEEE Electron Device Letters 39 (5), 715-718, 2018
322018
Large-area 1.2-kV GaN vertical power FinFETs with a record switching figure of merit
Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ...
IEEE Electron Device Letters 40 (1), 75-78, 2018
262018
GaN nanowire n-MOSFET with 5 nm channel length for applications in digital electronics
N Chowdhury, G Iannaccone, G Fiori, DA Antoniadis, T Palacios
IEEE Electron Device Letters 38 (7), 859-862, 2017
182017
Structural, dielectric and magnetic properties of Ta-substituted Bi0. 8La0. 2FeO3 multiferroics
T Fakhrul, R Mahbub, N Chowdhury, QDM Khosru, A Sharif
Journal of Alloys and Compounds 622, 471-476, 2015
152015
P-channel GaN transistor based on p-GaN/AlGaN/GaN on Si
N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ...
IEEE Electron Device Letters 40 (7), 1036-1039, 2019
132019
Negative capacitance tunnel field effect transistor: A novel device with low subthreshold swing and high on current
N Chowdhury, SMF Azad, QDM Khosru
ECS Transactions 58 (16), 1, 2014
122014
Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm
J Lemettinen, N Chowdhury, H Okumura, I Kim, S Suihkonen, T Palacios
IEEE Electron Device Letters 40 (8), 1245-1248, 2019
62019
A low subthreshold swing tunneling field effect transistor for next generation low power CMOS applications
N Chowdhury, I Ahmed, T Fakhrul, MK Alam, QDM Khosru
Physica E: Low-dimensional Systems and Nanostructures 74, 251-257, 2015
62015
Regrowth-free GaN-based Complementary Logic on a Si Substrate
N Chowdhury, Q Xie, M Yuan, K Cheng, HW Then, T Palacios
IEEE Electron Device Letters 41 (5), 2020
32020
In x Ga 1− x Sb MOSFET: Performance analysis by self consistent CV characterization and direct tunneling gate leakage current
MH Alam, IA Niaz, I Ahmed, ZA Azim, N Chowdhury, QDM Khosru
Electro/Information Technology (EIT), 2012 IEEE International Conference on, 1-6, 2012
32012
Superior Performance of 5-nm Gate Length GaN Nanowire nFET for Digital Logic Applications
Y Chu, SC Lu, N Chowdhury, M Povolotskyi, G Klimeck, M Mohamed, ...
IEEE Electron Device Letters 40 (6), 874-877, 2019
22019
First demonstration of a self-aligned GaN p-FET
N Chowdhury, Q Xie, M Yuan, NS Rajput, P Xiang, K Cheng, HW Then, ...
2019 IEEE International Electron Devices Meeting (IEDM), 4.6. 1-4.6. 4, 2019
12019
Transistor with Multi-Metal Gate
KH Teo, N Chowdhury
US Patent App. 15/785,625, 2019
12019
p-Channel gallium nitride transistor on Si substrate
N Chowdhury
Massachusetts Institute of Technology, 2018
12018
Materials and Technology Issues for the Next Generation of Power Electronic Devices
A Zubair, J Niroula, N Chowdhury, Y Zhang, J Lemettinen, T Palacios
2020 Device Research Conference (DRC), 1-2, 2020
2020
Barrier heights and Fermi level pinning in metal contacts on p-type GaN
S Wahid, N Chowdhury, MK Alam, T Palacios
Applied Physics Letters 116 (21), 213506, 2020
2020
Vertically stacked multichannel pyramid transistor
KH Teo, N Chowdhury
US Patent 10,658,501, 2020
2020
Filters with virtual inductor implemented using negative capacitor
KH Teo, N Chowdhury
US Patent 10,622,960, 2020
2020
ระบบไม่สามารถดำเนินการได้ในขณะนี้ โปรดลองใหม่อีกครั้งในภายหลัง
บทความ 1–20