Nico Ketteniss
Nico Ketteniss
GaN Device Technology, RWTH Aachen University
Bestätigte E-Mail-Adresse bei gan.rwth-aachen.de
Titel
Zitiert von
Zitiert von
Jahr
Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates
N Ketteniss, LR Khoshroo, M Eickelkamp, M Heuken, H Kalisch, ...
Semiconductor science and technology 25 (7), 075013, 2010
712010
Recessed-gate enhancement-mode AlGaN/GaN heterostructure field-effect transistors on Si with record DC performance
H Hahn, G Lükens, N Ketteniss, H Kalisch, A Vescan
Applied Physics Express 4 (11), 114102, 2011
692011
Polarization-engineered enhancement-mode high-electron-mobility transistors using quaternary AlInGaN barrier layers
B Reuters, A Wille, N Ketteniss, H Hahn, B Holländer, M Heuken, ...
Journal of electronic materials 42 (5), 826-832, 2013
382013
First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET
H Hahn, B Reuters, A Wille, N Ketteniss, F Benkhelifa, O Ambacher, ...
Semiconductor Science and Technology 27 (5), 055004, 2012
372012
InAlN/GaN HEMTs on sapphire substrate with 2.9-W/mm output power density at 18 GHz
F Lecourt, N Ketteniss, H Behmenburg, N Defrance, V Hoel, ...
IEEE electron device letters 32 (11), 1537-1539, 2011
332011
Growth studies on quaternary AlInGaN layers for HEMT application
B Reuters, A Wille, B Holländer, E Sakalauskas, N Ketteniss, C Mauder, ...
Journal of electronic materials 41 (5), 905-909, 2012
242012
Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT
F Lecourt, A Agboton, N Ketteniss, H Behmenburg, N Defrance, V Hoel, ...
IEEE electron device letters 34 (8), 978-980, 2013
202013
Polarization-reduced quaternary InAlGaN/GaN HFET and MISHFET devices
N Ketteniss, A Askar, B Reuters, A Noculak, B Holländer, H Kalisch, ...
Semiconductor science and technology 27 (5), 055012, 2012
192012
Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors
M Eickelkamp, M Weingarten, L Rahimzadeh Khoshroo, N Ketteniss, ...
Journal of Applied Physics 110 (8), 084501, 2011
162011
In situ SiN passivation of AlInN/GaN heterostructures by MOVPE
H Behmenburg, LR Khoshroo, C Mauder, N Ketteniss, KH Lee, ...
physica status solidi c 7 (7‐8), 2104-2106, 2010
162010
Quaternary nitride heterostructure field effect transistors
L Rahimzadeh Khoshroo, N Ketteniss, C Mauder, H Behmenburg, ...
physica status solidi c 7 (7‐8), 2001-2003, 2010
142010
Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics
H Hahn, J Achenbach, N Ketteniss, A Noculak, H Kalisch, A Vescan
Solid-state electronics 67 (1), 90-93, 2012
132012
Influence of mask material and process parameters on etch angle in a chlorine-based GaN dry etch
H Hahn, JB Gruis, N Ketteniss, F Urbain, H Kalisch, A Vescan
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30 (5 …, 2012
122012
Quaternary Enhancement-Mode HFET With In Situ SiN Passivation
N Ketteniss, H Behmenburg, H Hahn, A Noculak, B Hollander, H Kalisch, ...
IEEE electron device letters 33 (4), 519-521, 2012
122012
Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties
H Behmenburg, LR Khoshroo, M Eickelkamp, C Mauder, M Fieger, ...
physica status solidi c 6 (S2 2), S1041-S1044, 2009
122009
The effect of gate length variation on InAlGaN/GaN HFET device characteristics
N Ketteniss, H Behmenburg, F Lecourt, N Defrance, V Hoel, JC De Jaeger, ...
Semiconductor Science and Technology 27 (3), 035009, 2012
92012
RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate
F Lecourt, N Ketteniss, H Behmenburg, N Defrance, V Hoel, ...
Electronics letters 47 (3), 212-214, 2011
92011
Processing approaches of AlGaN/GaN Metal Insulator Semiconductor Hetero Field Effect Transistors (MISHFET) on Si (111) substrates
M Eickelkamp, N Ketteniß, C Lautensack, A Noculak, H Kalisch, ...
physica status solidi c 6 (S2 2), S1033-S1036, 2009
72009
Quaternary nitride enhancement mode HFET with 260 mS/mm and a threshold voltage of+ 0.5 V
N Ketteniss, B Reuters, B Holländer, H Hahn, H Kalisch, A Vescan
70th Device Research Conference, 161-162, 2012
62012
Study on growth and electrical performance of double‐heterostructure AlGaN/GaN/AlGaN field‐effect‐transistors
A Vescan, H Hardtdegen, N Ketteniß, M Eickelkamp, A Noculak, ...
physica status solidi c 6 (S2 2), S1003-S1006, 2009
62009
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