Growth of InSb and InAs1−xSbx on GaAs by molecular beam epitaxy JI Chyi, S Kalem, NS Kumar, CW Litton, H Morkoc Applied physics letters 53 (12), 1092-1094, 1988 | 144 | 1988 |
Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures A Wolfsteller, N Geyer, TK Nguyen-Duc, PD Kanungo, ND Zakharov, ... Thin Solid Films 518 (9), 2555-2561, 2010 | 68 | 2010 |
Infrared photoluminescence of InAs epilayers grown on GaAs and Si substrates RD Grober, HD Drew, JI Chyi, S Kalem, H Morkoc Journal of applied physics 65 (10), 4079-4081, 1989 | 66 | 1989 |
Enhanced electron spin polarization in photoemission from thin GaAs T Maruyama, R Prepost, EL Garwin, CK Sinclair, B Dunham, S Kalem Applied physics letters 55 (16), 1686-1688, 1989 | 59 | 1989 |
Possibility of fabricating light-emitting porous silicon from gas phase etchants S Kalem, O Yavuzcetin Optics Express 6 (1), 7-11, 2000 | 49 | 2000 |
Growth and transport properties of InAs epilayers on GaAs S Kalem, JI Chyi, H Morkoç, R Bean, K Zanio Applied physics letters 53 (17), 1647-1649, 1988 | 43 | 1988 |
Black silicon with high density and high aspect ratio nanowhiskers S Kalem, P Werner, Ö Arthursson, V Talalaev, B Nilsson, M Hagberg, ... Nanotechnology 22 (23), 235307, 2011 | 39 | 2011 |
Optical and structural investigation of stain‐etched silicon Ş Kalem, M Rosenbauer Applied physics letters 67 (17), 2551-2553, 1995 | 39 | 1995 |
Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates Ş Kalem, J Chyi, CW Litton, H Morkoc, SC Kan, A Yariv Applied physics letters 53 (7), 562-564, 1988 | 37 | 1988 |
Molecular-beam epitaxial growth and transport properties of InAs epilayers S Kalem Journal of Applied Physics 66 (7), 3097-3103, 1989 | 35 | 1989 |
Synthesis of ammonium silicon fluoride cryptocrystals on silicon by dry etching S Kalem Applied surface science 236 (1-4), 336-341, 2004 | 31 | 2004 |
Disordered Semiconductors, edited by MA Kastner, GA Thomas, and SR Ovshinsky TM Searle, M Hopkinson, M Edmeades, S Kalem, IG Austin, RA Gibson New York, Plenum, 1987 | 30 | 1987 |
S. Al Dallal, and J. Bouriex J Chevallier, S Kalem J. Non-Cryst. Solids 51, 277, 1982 | 29 | 1982 |
Optical investigation of a-Si: H/a-SiN x: H superlattices S Kalem Physical Review B 37 (15), 8837, 1988 | 26 | 1988 |
GaInAs/GaAs strained layer MQW electroabsorption optical modulator and self-electro-optic effect device W Dobbelaere, S Kalem, D Huang, MS Ünlü, H Morkoç Electronics Letters 24 (5), 295-297, 1988 | 26 | 1988 |
Optical characterization of dislocation free Ge and GeOI wafers S Kalem, I Romandic, A Theuwis Materials Science in Semiconductor Processing 9 (4-5), 753-758, 2006 | 24 | 2006 |
Hydrogenation of InAs on GaAs heterostructures B Theys, A Lusson, J Chevallier, C Grattepain, S Kalem, M Stutzmann Journal of applied physics 70 (3), 1461-1466, 1991 | 23 | 1991 |
Disordered Semiconductors TM Searle, M Hopkinson, M Edmeades, S Kalem, IG Austin, RA Gibson, ... M. Kastner, p357, 1987 | 22 | 1987 |
Controlled thinning and surface smoothening of silicon nanopillars S Kalem, P Werner, B Nilsson, VG Talalaev, M Hagberg, Ö Arthursson, ... Nanotechnology 20 (44), 445303, 2009 | 21 | 2009 |
Transport properties of hydrogenated and chlorinated amorphous silicon Correlation with infrared transmission spectra SA Dallal, S Kalem, J Bourneix, J Chevallier, M Toulemonde Philosophical Magazine B 50 (4), 493-504, 1984 | 17 | 1984 |