Systematic experimental and theoretical investigation of intersubband absorption in M Tchernycheva, L Nevou, L Doyennette, FH Julien, E Warde, F Guillot, ...
Physical Review B—Condensed Matter and Materials Physics 73 (12), 125347, 2006
319 2006 GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ...
Journal of Applied Physics 104 (9), 2008
231 2008 Near infrared quantum cascade detector in GaN∕ AlGaN∕ AlN heterostructures A Vardi, G Bahir, F Guillot, C Bougerol, E Monroy, SE Schacham, ...
Applied Physics Letters 92 (1), 2008
169 2008 GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, ...
New Journal of Physics 11 (12), 125023, 2009
118 2009 Si-doped GaN∕ AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths F Guillot, E Bellet-Amalric, E Monroy, M Tchernycheva, L Nevou, ...
Journal of applied physics 100 (4), 2006
107 2006 Room temperature demonstration of GaN∕ AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength A Vardi, N Akopian, G Bahir, L Doyennette, M Tchernycheva, L Nevou, ...
Applied physics letters 88 (14), 2006
96 2006 High-quality AlN∕ GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors D Hofstetter, E Baumann, FR Giorgetta, M Graf, M Maier, F Guillot, ...
Applied physics letters 88 (12), 2006
91 2006 Short wavelength (λ= 2.13 μm) intersubband luminescence from GaN∕ AlN quantum wells at room temperature L Nevou, M Tchernycheva, FH Julien, F Guillot, E Monroy
Applied physics letters 90 (12), 2007
77 2007 High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈ 1.55 μm A Vardi, N Kheirodin, L Nevou, H Machhadani, L Vivien, P Crozat, ...
Applied Physics Letters 93 (19), 2008
74 2008 Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕ AlN coupled quantum wells L Nevou, N Kheirodin, M Tchernycheva, L Meignien, P Crozat, A Lupu, ...
Applied physics letters 90 (22), 2007
74 2007 Electron confinement in strongly coupled GaN∕ AlN quantum wells M Tchernycheva, L Nevou, L Doyennette, FH Julien, F Guillot, E Monroy, ...
Applied physics letters 88 (15), 2006
66 2006 Electrically adjustable intersubband absorption of a GaN∕ AlN superlattice grown on a transistorlike structure E Baumann, FR Giorgetta, D Hofstetter, S Leconte, F Guillot, ...
Applied physics letters 89 (10), 2006
59 2006 GaN-based quantum dot infrared photodetector operating at 1.38 µm L Doyennette, L Nevou, M Tchernycheva, A Lupu, F Guillot, E Monroy, ...
Electronics Letters 41 (19), 1077-1078, 2005
59 2005 Optically nonlinear effects in intersubband transitions of GaN∕ AlN-based superlattice structures D Hofstetter, E Baumann, FR Giorgetta, F Guillot, S Leconte, E Monroy
Applied Physics Letters 91 (13), 2007
55 2007 Intraband absorption of doped GaN∕ AlN quantum dots at telecommunication wavelengths M Tchernycheva, L Nevou, L Doyennette, A Helman, R Colombelli, ...
Applied Physics Letters 87 (10), 2005
52 2005 Intersubband resonant enhancement of second-harmonic generation in GaN∕ AlN quantum wells L Nevou, M Tchernycheva, F Julien, M Raybaut, A Godard, E Rosencher, ...
Applied physics letters 89 (15), 2006
48 2006 Electrooptical modulator at telecommunication wavelengths based on GaN–AlN coupled quantum wells N Kheirodin, L Nevou, H Machhadani, P Crozat, L Vivien, ...
IEEE Photonics Technology Letters 20 (9), 724-726, 2008
47 2008 High frequency (f¼2. 37 GHz) room temperature operation of 1.55lm AlN/GaN-based intersubband detector FR Giorgetta, E Baumann, F Guillot, E Monroy, D Hofstetter
simulation 104, 103, 2007
46 2007 Intersubband transition-based processes and devices in AlN/GaN-based heterostructures D Hofstetter, E Baumann, FR Giorgetta, R Théron, H Wu, WJ Schaff, ...
Proceedings of the IEEE 98 (7), 1234-1248, 2010
42 2010 Room-temperature intersubband emission of GaN/AlN quantum wells at λ= 2.3 µm L Nevou, FH Julien, R Colombelli, F Guillot, E Monroy
Electronics Letters 42 (22), 1308-1309, 2006
40 2006 
Eva MonroyCEA, IRIG, PHELIQS-NPSC, Grenoble, FranceBestätigte E-Mail-Adresse bei cea.fr
