| A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon C Convertino, CB Zota, H Schmid, D Caimi, L Czornomaz, AM Ionescu, ... nature electronics 4 (2), 162-170, 2021 | 73 | 2021 |
| III–V heterostructure tunnel field-effect transistor C Convertino, CB Zota, H Schmid, AM Ionescu, KE Moselund Journal of Physics: Condensed Matter 30 (26), 264005, 2018 | 59 | 2018 |
| Radio-frequency characterization of selectively regrown InGaAs lateral nanowire MOSFETs CB Zota, G Roll, LE Wernersson, E Lind IEEE Transactions on Electron Devices 61 (12), 4078-4083, 2014 | 59 | 2014 |
| In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels CB Zota, LE Wernersson, E Lind IEEE Electron Device Letters 35 (3), 342-344, 2014 | 40 | 2014 |
| InGaAs tri-gate MOSFETs with record on-current CB Zota, F Lindelow, LE Wernersson, E Lind 2016 IEEE International Electron Devices Meeting (IEDM), 3.2. 1-3.2. 4, 2016 | 38 | 2016 |
| Quantized Conduction and High Mobility in Selectively Grown InxGa1–xAs Nanowires CB Zota, D Lindgren, LE Wernersson, E Lind ACS nano 9 (10), 9892-9897, 2015 | 34 | 2015 |
| Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm C Navarro, S Karg, C Marquez, S Navarro, C Convertino, C Zota, ... Nature Electronics 2 (9), 412-419, 2019 | 33 | 2019 |
| InGaAs-on-insulator FinFETs with reduced off-current and record performance C Convertino, C Zota, S Sant, F Eltes, M Sousa, D Caimi, A Schenk, ... 2018 IEEE International Electron Devices Meeting (IEDM), 39.2. 1-39.2. 4, 2018 | 33 | 2018 |
| High-performance lateral nanowire InGaAs MOSFETs with improved on-current CB Zota, LE Wernersson, E Lind IEEE Electron Device Letters 37 (10), 1264-1267, 2016 | 32 | 2016 |
| High‐frequency InGaAs tri‐gate MOSFETs with fmax of 400 GHz CB Zota, F Lindelöw, LE Wernersson, E Lind Electronics Letters 52 (22), 1869-1871, 2016 | 30 | 2016 |
| InGaAs FinFETs directly integrated on silicon by selective growth in oxide cavities C Convertino, C Zota, H Schmid, D Caimi, M Sousa, K Moselund, ... Materials 12 (1), 87, 2018 | 29 | 2018 |
| Characterization of Ni–GaSb alloys formed by direct reaction of Ni with GaSb CB Zota, SH Kim, M Yokoyama, M Takenaka, S Takagi Applied Physics Express 5 (7), 071201, 2012 | 28 | 2012 |
| Heterogeneous integration of III–V materials by direct wafer bonding for high-performance electronics and optoelectronics D Caimi, P Tiwari, M Sousa, KE Moselund, CB Zota IEEE Transactions on Electron Devices 68 (7), 3149-3156, 2021 | 27 | 2021 |
| Single suspended InGaAs nanowire MOSFETs CB Zota, LE Wernersson, E Lind 2015 IEEE International Electron Devices Meeting (IEDM), 31.4. 1-31.4. 4, 2015 | 25 | 2015 |
| High performance quantum well InGaAs-On-Si MOSFETs with sub-20 nm gate length for RF applications CB Zota, C Convertino, Y Baumgartner, M Sousa, D Caimi, L Czornomaz 2018 IEEE International Electron Devices Meeting (IEDM), 39.4. 1-39.4. 4, 2018 | 19 | 2018 |
| InGaAs-on-insulator MOSFETs featuring scaled logic devices and record RF performance CB Zota, C Convertino, V Deshpande, T Merkle, M Sousa, D Caimi, ... 2018 IEEE Symposium on VLSI Technology, 165-166, 2018 | 19 | 2018 |
| InGaAs FinFETs 3-D Sequentially Integrated on FDSOI Si CMOS With Record Performance C Convertino, CB Zota, D Caimi, M Sousa, L Czornomaz IEEE Journal of the Electron Devices Society 7, 1170-1174, 0 | 18* | |
| Sub-thermionic scalable III-V tunnel field-effect transistors integrated on Si (100) C Convertino, CB Zota, Y Baumgartner, P Staudinger, M Sousa, S Mauthe, ... 2019 IEEE International Electron Devices Meeting (IEDM), 37.1. 1-37.1. 4, 2019 | 17 | 2019 |
| High-frequency quantum well InGaAs-on-Si MOSFETs with scaled gate lengths CB Zota, C Convertino, M Sousa, D Caimi, K Moselund, L Czornomaz IEEE Electron Device Letters 40 (4), 538-541, 2019 | 16 | 2019 |
| InGaAs nanowire MOSFETs with ION= 555 μA/μm at IOFF= 100 nA/μm and VDD= 0.5 V CB Zota, F Lindelöw, LE Wernersson, E Lind 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016, 7573418, 2016 | 14 | 2016 |
