Deep-level optical spectroscopy investigation of N-doped TiO2 films Y Nakano, T Morikawa, T Ohwaki, Y Taga
Applied Physics Letters 86 (13), 132104-132104-3, 2005
238 2005 Optical bandgap widening of p-type Cu2O films by nitrogen doping Y Nakano, S Saeki, T Morikawa
Applied Physics Letters 94 (2), 2009
210 2009 Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films Y Nakano, T Morikawa, T Ohwaki, Y Taga
Applied physics letters 88 (17), 172103-172103-3, 2006
142 2006 enhancement mode metal-oxide semiconductor field-effect transistorsY Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ...
Applied physics letters 84 (15), 2919-2921, 2004
137 2004 Electrical characterization of band gap states in C-doped TiO2 films Y Nakano, T Morikawa, T Ohwaki, Y Taga
Applied Physics Letters 87 (5), 052111-052111-3, 2005
107 2005 Interface properties of thermally oxidized n -GaN metal–oxide–semiconductor capacitors Y Nakano, T Jimbo
Applied physics letters 82 (2), 218-220, 2003
101 2003 III-V hemt devices M Sugimoto, T Kachi, Y Nakano, T Uesugi, H Ueda, N Soejima
US Patent 7,777,252, 2010
85 2010 Electrical activation characteristics of silicon-implanted GaN Y Irokawa, O Fujishima, T Kachi, Y Nakano
Journal of applied physics 97 (8), 083505-083505-5, 2005
82 2005 Origin of visible-light sensitivity in N-doped TiO2 films Y Nakano, T Morikawa, T Ohwaki, Y Taga
Chemical Physics 339 (1), 20-26, 2007
80 2007 Microstructure and Related Phenomena of Multilayer Ceamic Capacitors with Ni-Electrode Y Nakano
J. Amer. Ceram. Soc. 32, 119-128, 1993
79 1993 OXYGEN ADSORPTION AND VDR EFFECT IN(Sr, Ca) TiO3-x BASED CERAMICS Y Nakano, N Ichinose
Journal of Materials Research 5 (12), 2910-2922, 1990
71 1990 Group III nitride semiconductor device T Kachi, Y Nakano, T Uesugi
US Patent 7,211,839, 2007
58 2007 Characteristics of SiO2/n-GaN interfaces with β-Ga2O3 interlayers Y Nakano, T Kachi, T Jimbo
Applied physics letters 83 (21), 4336-4338, 2003
58 2003 Visible-blind wide-dynamic-range fast-response self-powered ultraviolet photodetector based on CuI/In-Ga-Zn-O heterojunction N Yamada, Y Kondo, X Cao, Y Nakano
Applied Materials Today 15, 153-162, 2019
57 2019 Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams A Uedono, K Ito, H Nakamori, K Mori, Y Nakano, T Kachi, S Ishibashi, ...
Journal of Applied Physics 102 (8), 2007
49 2007 Interface properties of SiO2/n-GaN metal–insulator–semiconductor structures Y Nakano, T Jimbo
Applied physics letters 80 (25), 4756-4758, 2002
49 2002 Deep-level optical spectroscopy investigation of band gap states in AlGaN/GaN hetero-interfaces Y Nakano, Y Irokawa, M Takeguchi
Applied physics express 1 (9), 091101, 2008
47 2008 Deep-level characterization of N-doped ZnO films prepared by reactive magnetron sputtering Y Nakano, T Morikawa, T Ohwaki, Y Taga
Applied Physics Letters 87 (23), 2005
45 2005 Co-implantation of Si+N into GaN for n -type doping Y Nakano, T Jimbo
Journal of applied physics 92 (7), 3815-3819, 2002
44 2002 Electrical characterization of acceptor levels in Mg-doped GaN Y Nakano, T Jimbo
Journal of applied physics 92 (9), 5590-5592, 2002
42 2002