| Apparatus for taking measurements in the ear B Kraus, E Kahler, A Klös, H Mannebach US Patent 6,358,216, 2002 | 144 | 2002 |
| Compact model for short-channel junctionless accumulation mode double gate MOSFETs T Holtij, M Graef, FM Hain, A Kloes, B Iñíguez IEEE Transactions on Electron Devices 61 (2), 288-299, 2013 | 104 | 2013 |
| A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling A Kloes, A Kostka Solid-State Electronics 39 (12), 1761-1775, 1996 | 86 | 1996 |
| Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region T Holtij, M Schwarz, A Kloes, B Iniguez Solid-state electronics 90, 107-115, 2013 | 60 | 2013 |
| Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations forand Subthreshold Slope A Kloes, M Weidemann, D Goebel, BT Bosworth IEEE transactions on electron devices 55 (12), 3467-3475, 2008 | 59 | 2008 |
| Organic bipolar transistors SJ Wang, M Sawatzki, G Darbandy, F Talnack, J Vahland, M Malfois, ... Nature 606 (7915), 700-705, 2022 | 43 | 2022 |
| 2D analytical potential modeling of junctionless DG MOSFETs in subthreshold region including proposal for calculating the threshold voltage T Holtij, M Schwarz, A Kloes, B Iñíguez 2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012 | 43 | 2012 |
| MOS3: A New Physics-Based Explicit Compact Model for Lightly Doped Short-Channel Triple-Gate SOI MOSFETs A Kloes, M Schwarz, T Holtij IEEE Transactions on Electron Devices 59 (2), 349, 2012 | 41 | 2012 |
| Efficient and low-voltage vertical organic permeable base light-emitting transistors Z Wu, Y Liu, E Guo, G Darbandy, SJ Wang, R Hübner, A Kloes, ... Nature Materials 20 (7), 1007-1014, 2021 | 37 | 2021 |
| A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current M Graef, T Holtij, F Hain, A Kloes, B Iniguez Microelectronics Journal 45 (9), 1144-1153, 2014 | 35 | 2014 |
| 2-D physics-based compact DC modeling of double-gate tunnel-FETs F Horst, A Farokhnejad, QT Zhao, B Iniguez, A Kloes IEEE Transactions on Electron Devices 66 (1), 132-138, 2018 | 34 | 2018 |
| On the physical behavior of cryogenic IV and III–V Schottky barrier MOSFET devices M Schwarz, LE Calvet, JP Snyder, T Krauss, U Schwalke, A Kloes IEEE Transactions on Electron Devices 64 (9), 3808-3815, 2017 | 34 | 2017 |
| Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs M Schwarz, T Holtij, A Kloes, B Iniguez Solid-State Electronics 69, 72-84, 2012 | 34 | 2012 |
| Hair-removing device B Kraus, A Klos US Patent 8,627,573, 2014 | 31 | 2014 |
| 2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET M Schwarz, M Weidemann, A Kloes, B Iñíguez Solid-State Electronics 54 (11), 1372-1380, 2010 | 31 | 2010 |
| Drive mechanism for oscillating electric products of personal use, particularly dry shavers T Brum, A Klös, H Port, W Port, U Schaaf US Patent 6,441,517, 2002 | 31 | 2002 |
| Drive mechanisms for small electric appliances B Kraus, A Klös US Patent 6,933,630, 2005 | 30 | 2005 |
| Vertical organic permeable dual-base transistors for logic circuits E Guo, Z Wu, G Darbandy, S Xing, SJ Wang, A Tahn, M Göbel, A Kloes, ... Nature Communications 11 (1), 4725, 2020 | 29 | 2020 |
| Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation F Hain, M Graef, B Iñíguez, A Kloes Solid-State Electronics 133, 17-24, 2017 | 29 | 2017 |
| Infrared thermometer with heatable probe tip and protective cover B Kraus, A Klös, E Kahler, F Beerwerth, H Mannebach US Patent 6,694,174, 2004 | 27 | 2004 |
Mike SchwarzNanoP, THM - University of Applied SciencesVerified email at ei.thm.de
