Max C. Lemme

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Mikael ÖstlingKTH Royal Institute of TechnologyVerified email at kth.se
Prof.Dr. Heinrich KurzWissenschaftlicher Direktor AMO GmbH, 1993-2016 (verstorben)Verified email at amo.de
Sam VaziriStanford UniversityVerified email at stanford.edu
Anderson David SmithAssociate Professor, Chalmers University of TechnologyVerified email at kth.se
SATENDER KATARIARWTH Aachen UniversityVerified email at rwth-aachen.de
Tim EchtermeyerUniversity of ManchesterVerified email at manchester.ac.uk
Thorsten WahlbrinkPhysiker, AMO GmbHVerified email at amo.de
Frank NiklausProfessor of Micro and Nanosystems at KTH Royal Institute of Technology, Stockholm, SwedenVerified email at kth.se
stefan wagnerAMO GmbHVerified email at amo.de
Grzegorz LupinaIHPVerified email at ihp-microelectronics.com
Amit GahoiPh.D student, RWTH Aachen UniversityVerified email at eld.rwth-aachen.de
Johnson Kwame EfaviSenior Lecturer University of GhanaVerified email at ug.edu.gh
Eduard AlarconElectronic Engineering Professor (UPC)Verified email at upc.edu
pk hurleyTyndall National Institute, University College CorkVerified email at tyndall.ie
Gunther Lippertmaterials research, Frankfurt (Oder) GermanyVerified email at ihp-microelectronics.com
Georg S. DuesbergChair of Sensortechnology , Universität der Bundeswehr, MunichVerified email at tcd.ie
Jaroslaw DabrowskiIHPVerified email at ihp-microelectronics.com
Karim CherkaouiTyndall National InstituteVerified email at tyndall.ie
Andreas BablichPostDoc for Nanotechnologies, University SiegenVerified email at uni-siegen.de
Andreas C FischerPh.D. from KTH Royal Institute of Technology in Stockholm, SwedenVerified email at ee.kth.se

Max C. Lemme

Professor, RWTH Aachen University, Germany, Director, AMO GmbH

Verified email at eld.rwth-aachen.de - Homepage

Nanoelectronics Microelectronics


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
A graphene field-effect device MC Lemme, TJ Echtermeyer, M Baus, H Kurz IEEE Electron Device Letters 28 (4), 282-284, 2007	1228	2007
Gate-activated photoresponse in a graphene p–n junction MC Lemme, FHL Koppens, AL Falk, MS Rudner, H Park, LS Levitov, ... Nano Letters 11 (10), 4134-4137, 2011	404	2011
Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2 V Geringer, M Liebmann, T Echtermeyer, S Runte, M Schmidt, ... Physical review letters 102 (7), 076102, 2009	400	2009
Precision cutting and patterning of graphene with helium ions DC Bell, MC Lemme, LA Stern, JR Williams, CM Marcus Nanotechnology 20 (45), 455301, 2009	394	2009
Efficient inkjet printing of graphene J Li, F Ye, S Vaziri, M Muhammed, MC Lemme, M Östling Advanced Materials 25 (29), 3985-3992, 2013	391	2013
Etching of graphene devices with a helium ion beam MC Lemme, DC Bell, JR Williams, LA Stern, BWH Baugher, ... ACS Nano 3 (9), 2674-2676, 2009	340	2009
Electromechanical piezoresistive sensing in suspended graphene membranes AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ... Nano Letters 13 (7), 3237-3242, 2013	304	2013
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ... ACS Nano 9 (5), 4776–4785, 2015	240	2015
A graphene-based hot electron transistor S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ... Nano Letters 13 (4), 1435-1439, 2013	227	2013
Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019	220	2019
High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature C Yim, K Lee, N McEvoy, M O'Brien, S Riazimehr, NC Berner, CP Cullen, ... ACS Nano 10 (10), 9550–9558, 2016	210	2016
Non-volatile switching in graphene field effect devices TJ Echtermeyer, MC Lemme, M Baus, BN Szafranek, AK Geim, H Kurz IEEE Electron Device Letters 29 (8), 952-954, 2008	201	2008
Resistive graphene humidity sensors with rapid and direct electrical readout AD Smith, K Elgammal, F Niklaus, A Delin, AC Fischer, S Vaziri, ... Nanoscale 7 (45), 19099-19109, 2015	198	2015
Vertical graphene base transistor W Mehr, JC Scheytt, J Dabrowski, G Lippert, YH Xie, MC Lemme, ... IEEE Electron Device Letters 33 (5), 691-693, 2012	165	2012
Inkjet Printing of MoS₂ J Li, MM Naiini, S Vaziri, MC Lemme, M Östling Advanced Functional Materials 24 (41), 6524-6531, 2014	163	2014
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ... Solid-State Electronics 51 (4), 622-626, 2007	149	2007
Graphene-enabled wireless communication for massive multicore architectures S Abadal, E Alarcón, A Cabellos-Aparicio, MC Lemme, M Nemirovsky IEEE Communications Magazine 51 (11), 137-143, 2013	137	2013
Mobility in graphene double gate field effect transistors MC Lemme, TJ Echtermeyer, M Baus, BN Szafranek, J Bolten, M Schmidt, ... Solid-State Electronics 52 (4), 514-518, 2008	136	2008
Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide T Mashoff, M Pratzer, V Geringer, TJ Echtermeyer, MC Lemme, ... Nano Letters 10 (2), 461-465, 2010	127	2010
Current status of graphene transistors MC Lemme Solid State Phenomena 156, 499-509, 2010	108	2010

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