Max C. Lemme

Cited by

	All	Since 2016
Citations	9233	5311
h-index	46	38
i10-index	124	88

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2005200620072008200920102011201220132014201520162017201820192020202127 56 146 188 304 309 403 500 534 661 741 900 927 956 1120 1355 43

Co-authors

Mikael ÖstlingKTH Royal Institute of TechnologyVerified email at kth.se
Prof.Dr. Heinrich KurzWissenschaftlicher Leiter AMICA/ AMO GmbHVerified email at amo.de
Sam VaziriStanford UniversityVerified email at stanford.edu
Anderson David SmithAssociate Professor, Chalmers University of TechnologyVerified email at kth.se
SATENDER KATARIARWTH Aachen UniversityVerified email at rwth-aachen.de
Tim EchtermeyerUniversity of ManchesterVerified email at manchester.ac.uk
Thorsten WahlbrinkPhysiker, AMO GmbHVerified email at amo.de
Frank NiklausProfessor of Micro and Nanosystems at KTH Royal Institute of Technology, Stockholm, SwedenVerified email at kth.se
stefan wagnerAMO GmbHVerified email at amo.de
Amit GahoiPh.D student, RWTH Aachen UniversityVerified email at eld.rwth-aachen.de
Grzegorz LupinaIHPVerified email at ihp-microelectronics.com
Johnson Kwame EfaviSenior Lecturer University of GhanaVerified email at ug.edu.gh
Eduard AlarconElectronic Engineering Professor (UPC)Verified email at upc.edu
pk hurleyTyndall National Institute, University College CorkVerified email at tyndall.ie
Gunther Lippertmaterials research, Frankfurt (Oder) GermanyVerified email at ihp-microelectronics.com
Jaroslaw DabrowskiIHPVerified email at ihp-microelectronics.com
Karim CherkaouiTyndall National InstituteVerified email at tyndall.ie
Andreas BablichPostDoc for Nanotechnologies, University SiegenVerified email at uni-siegen.de
Georg S. DuesbergChair of Sensortechnology , Universität der Bundeswehr, MunichVerified email at tcd.ie
Andreas C FischerPh.D. from KTH Royal Institute of Technology in Stockholm, SwedenVerified email at ee.kth.se

Max C. Lemme

Professor, RWTH Aachen University, Germany, Director, AMO GmbH

Verified email at eld.rwth-aachen.de - Homepage

Nanoelectronics Microelectronics


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A graphene field-effect device MC Lemme, TJ Echtermeyer, M Baus, H Kurz IEEE Electron Device Letters 28 (4), 282-284, 2007	1197	2007
Precision cutting and patterning of graphene with helium ions DC Bell, MC Lemme, LA Stern, JR Williams, CM Marcus Nanotechnology 20 (45), 455301, 2009	393	2009
Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2 V Geringer, M Liebmann, T Echtermeyer, S Runte, M Schmidt, ... Physical review letters 102 (7), 076102, 2009	391	2009
Gate-activated photoresponse in a graphene p–n junction MC Lemme, FHL Koppens, AL Falk, MS Rudner, H Park, LS Levitov, ... Nano Letters 11 (10), 4134-4137, 2011	390	2011
Efficient inkjet printing of graphene J Li, F Ye, S Vaziri, M Muhammed, MC Lemme, M Östling Advanced Materials 25 (29), 3985-3992, 2013	370	2013
Etching of graphene devices with a helium ion beam MC Lemme, DC Bell, JR Williams, LA Stern, BWH Baugher, ... ACS Nano 3 (9), 2674-2676, 2009	331	2009
Electromechanical piezoresistive sensing in suspended graphene membranes AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ... Nano Letters 13 (7), 3237-3242, 2013	302	2013
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ... ACS Nano 9 (5), 4776–4785, 2015	228	2015
A graphene-based hot electron transistor S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ... Nano Letters 13 (4), 1435-1439, 2013	218	2013
Non-volatile switching in graphene field effect devices TJ Echtermeyer, MC Lemme, M Baus, BN Szafranek, AK Geim, H Kurz IEEE Electron Device Letters 29 (8), 952-954, 2008	195	2008
High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature C Yim, K Lee, N McEvoy, M O'Brien, S Riazimehr, NC Berner, CP Cullen, ... ACS Nano 10 (10), 9550–9558, 2016	189	2016
Resistive graphene humidity sensors with rapid and direct electrical readout AD Smith, K Elgammal, F Niklaus, A Delin, AC Fischer, S Vaziri, ... Nanoscale 7 (45), 19099-19109, 2015	185	2015
Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019	182	2019
Vertical graphene base transistor W Mehr, JC Scheytt, J Dabrowski, G Lippert, YH Xie, MC Lemme, ... IEEE Electron Device Letters 33 (5), 691-693, 2012	156	2012
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ... Solid-State Electronics 51 (4), 622-626, 2007	151	2007
Inkjet Printing of MoS₂ J Li, MM Naiini, S Vaziri, MC Lemme, M Östling Advanced Functional Materials 24 (41), 6524-6531, 2014	148	2014
Mobility in graphene double gate field effect transistors MC Lemme, TJ Echtermeyer, M Baus, BN Szafranek, J Bolten, M Schmidt, ... Solid-State Electronics 52 (4), 514-518, 2008	133	2008
Graphene-enabled wireless communication for massive multicore architectures S Abadal, E Alarcón, A Cabellos-Aparicio, MC Lemme, M Nemirovsky IEEE Communications Magazine 51 (11), 137-143, 2013	131	2013
Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide T Mashoff, M Pratzer, V Geringer, TJ Echtermeyer, MC Lemme, ... Nano Letters 10 (2), 461-465, 2010	122	2010
Current status of graphene transistors MC Lemme Solid State Phenomena 156, 499-509, 2010	104	2010

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