Max C. Lemme

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Mikael ÖstlingKTH Royal Institute of TechnologyVerified email at kth.se
Prof.Dr. Heinrich KurzWissenschaftlicher Direktor AMO GmbH, 1993-2016 (verstorben)Verified email at amo.de
Sam VaziriStanford UniversityVerified email at stanford.edu
SATENDER KATARIARWTH Aachen UniversityVerified email at rwth-aachen.de
Anderson David SmithAssociate Professor, Chalmers University of TechnologyVerified email at kth.se
Thorsten WahlbrinkPhysiker, AMO GmbHVerified email at amo.de
Tim EchtermeyerUniversity of ManchesterVerified email at manchester.ac.uk
stefan wagnerAMO GmbHVerified email at amo.de
Frank NiklausProfessor of Micro and Nanosystems at KTH Royal Institute of Technology, Stockholm, SwedenVerified email at kth.se
Amit GahoiPh.D student, RWTH Aachen UniversityVerified email at eld.rwth-aachen.de
Grzegorz LupinaIHPVerified email at ihp-microelectronics.com
Johnson Kwame EfaviSenior Lecturer University of GhanaVerified email at ug.edu.gh
Georg S. DuesbergChair of Sensortechnology , Universität der Bundeswehr, MunichVerified email at unibw.de
pk hurleyTyndall National Institute, University College CorkVerified email at tyndall.ie
Eduard AlarconElectronic Engineering Professor (UPC)Verified email at upc.edu
Gunther Lippertmaterials research, Frankfurt (Oder) GermanyVerified email at ihp-microelectronics.com
Jaroslaw DabrowskiIHPVerified email at ihp-microelectronics.com
Andreas BablichPostDoc for Nanotechnologies, University SiegenVerified email at uni-siegen.de
Karim CherkaouiTyndall National InstituteVerified email at tyndall.ie
Jens BoltenAMO GmbHVerified email at amo.de

Max C. Lemme

Professor, RWTH Aachen University, Germany, Director, AMO GmbH

Verified email at eld.rwth-aachen.de - Homepage

Nanoelectronics Optoelectronics Graphene 2D Materials Perovskites


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A graphene field-effect device MC Lemme, TJ Echtermeyer, M Baus, H Kurz IEEE Electron Device Letters 28 (4), 282-284, 2007	1255	2007
Gate-activated photoresponse in a graphene p–n junction MC Lemme, FHL Koppens, AL Falk, MS Rudner, H Park, LS Levitov, ... Nano Letters 11 (10), 4134-4137, 2011	419	2011
Efficient inkjet printing of graphene J Li, F Ye, S Vaziri, M Muhammed, MC Lemme, M Östling Advanced Materials 25 (29), 3985-3992, 2013	418	2013
Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2 V Geringer, M Liebmann, T Echtermeyer, S Runte, M Schmidt, ... Physical review letters 102 (7), 076102, 2009	413	2009
Precision cutting and patterning of graphene with helium ions DC Bell, MC Lemme, LA Stern, JR Williams, CM Marcus Nanotechnology 20 (45), 455301, 2009	403	2009
Etching of graphene devices with a helium ion beam MC Lemme, DC Bell, JR Williams, LA Stern, BWH Baugher, ... ACS Nano 3 (9), 2674-2676, 2009	350	2009
Electromechanical piezoresistive sensing in suspended graphene membranes AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ... Nano Letters 13 (7), 3237-3242, 2013	319	2013
Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019	268	2019
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ... ACS Nano 9 (5), 4776–4785, 2015	253	2015
High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature C Yim, K Lee, N McEvoy, M O'Brien, S Riazimehr, NC Berner, CP Cullen, ... ACS Nano 10 (10), 9550–9558, 2016	246	2016
A graphene-based hot electron transistor S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ... Nano Letters 13 (4), 1435-1439, 2013	235	2013
Resistive graphene humidity sensors with rapid and direct electrical readout AD Smith, K Elgammal, F Niklaus, A Delin, AC Fischer, S Vaziri, ... Nanoscale 7 (45), 19099-19109, 2015	214	2015
Non-volatile switching in graphene field effect devices TJ Echtermeyer, MC Lemme, M Baus, BN Szafranek, AK Geim, H Kurz IEEE Electron Device Letters 29 (8), 952-954, 2008	204	2008
Inkjet Printing of MoS₂ J Li, MM Naiini, S Vaziri, MC Lemme, M Östling Advanced Functional Materials 24 (41), 6524-6531, 2014	174	2014
Vertical graphene base transistor W Mehr, JC Scheytt, J Dabrowski, G Lippert, YH Xie, MC Lemme, ... IEEE Electron Device Letters 33 (5), 691-693, 2012	170	2012
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ... Solid-State Electronics 51 (4), 622-626, 2007	153	2007
Graphene-enabled wireless communication for massive multicore architectures S Abadal, E Alarcón, A Cabellos-Aparicio, MC Lemme, M Nemirovsky IEEE Communications Magazine 51 (11), 137-143, 2013	142	2013
Mobility in graphene double gate field effect transistors MC Lemme, TJ Echtermeyer, M Baus, BN Szafranek, J Bolten, M Schmidt, ... Solid-State Electronics 52 (4), 514-518, 2008	136	2008
Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide T Mashoff, M Pratzer, V Geringer, TJ Echtermeyer, MC Lemme, ... Nano Letters 10 (2), 461-465, 2010	129	2010
Current status of graphene transistors MC Lemme Solid State Phenomena 156, 499-509, 2010	117	2010

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