Effect of the quantum well thickness on the performance of InGaN photovoltaic cells L Redaelli, A Mukhtarova, S Valdueza-Felip, A Ajay, C Bougerol, ...
Applied Physics Letters 105 (13), 2014
88 2014 High-sensitive SPR sensing with Indium Nitride as a dielectric overlay of optical fibers Ó Esteban, FB Naranjo, N Díaz-Herrera, S Valdueza-Felip, MC Navarrete, ...
Sensors and Actuators B: Chemical 158 (1), 372-376, 2011
77 2011 High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics S Valdueza-Felip, E Bellet-Amalric, A Núñez-Cascajero, Y Wang, ...
Journal of Applied Physics 116 (23), 2014
56 2014 Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness A Mukhtarova, S Valdueza-Felip, L Redaelli, C Durand, C Bougerol, ...
Applied Physics Letters 108 (16), 2016
37 2016 Photovoltaic response of InGaN/GaN multiple-quantum well solar cells S Valdueza-Felip, A Mukhtarova, Q Pan, G Altamura, L Grenet, C Durand, ...
Japanese Journal of Applied Physics 52 (8S), 08JH05, 2013
32 2013 Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration S Valdueza-Felip, A Mukhtarova, L Grenet, C Bougerol, C Durand, ...
Applied Physics Express 7 (3), 032301, 2014
31 2014 Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths FB Naranjo, PK Kandaswamy, S Valdueza-Felip, V Calvo, ...
Applied Physics Letters 98 (3), 2011
29 2011 Two-step method for the deposition of AlN by radio frequency sputtering L Monteagudo-Lerma, S Valdueza-Felip, A Núñez-Cascajero, ...
Thin Solid Films 545, 149-153, 2013
25 2013 Carrier localization in InN/InGaN multiple-quantum wells with high In-content S Valdueza-Felip, L Rigutti, FB Naranjo, P Ruterana, J Mangeney, ...
Applied Physics Letters 101 (6), 2012
25 2012 In-rich AlxIn1− xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers A Núñez-Cascajero, S Valdueza-Felip, L Monteagudo-Lerma, E Monroy, ...
Journal of Physics D: Applied Physics 50 (6), 065101, 2017
23 2017 Study of high In-content AlInN deposition on p-Si (111) by RF-sputtering A Núñez-Cascajero, L Monteagudo-Lerma, S Valdueza-Felip, C Navío, ...
Japanese Journal of Applied Physics 55 (5S), 05FB07, 2016
23 2016 Pin InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm S Valdueza-Felip, A Ajay, L Redaelli, MP Chauvat, P Ruterana, T Cremel, ...
Solar Energy Materials and Solar Cells 160, 355-360, 2017
22 2017 Improvement of InN layers deposited on Si (111) by RF sputtering using a low-growth-rate InN buffer layer S Valdueza-Felip, J Ibáñez, E Monroy, M González-Herráez, L Artús, ...
Thin Solid Films 520 (7), 2805-2809, 2012
21 2012 Stranski–Krastanow growth of (112¯ 2)-oriented GaN/AlN quantum dots L Lahourcade, S Valdueza-Felip, T Kehagias, GP Dimitrakopulos, ...
Applied Physics Letters 94 (11), 2009
21 2009 Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 S Valdueza-Felip, FB Naranjo, M González-Herráez, H Fernández, J Solis, ...
IEEE Photonics Technology Letters 20 (16), 1366-1368, 2008
21 2008 Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells L Redaelli, A Mukhtarova, A Ajay, A Núñez-Cascajero, S Valdueza-Felip, ...
Japanese Journal of Applied Physics 54 (7), 072302, 2015
20 2015 Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering A Núñez-Cascajero, S Valdueza-Felip, R Blasco, M de La Mata, SI Molina, ...
Journal of Alloys and Compounds 769, 824-830, 2018
18 2018 Influence of the AlInN thickness on the photovoltaic characteristics of AlInN on Si solar cells deposited by RF sputtering R Blasco, A Núñez‐Cascajero, M Jiménez‐Rodríguez, D Montero, ...
physica status solidi (a) 216 (1), 1800494, 2019
17 2019 Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs L Monteagudo-Lerma, S Valdueza-Felip, FB Naranjo, P Corredera, ...
Optics Express 21 (23), 27578-27586, 2013
17 2013 Influence of deposition conditions on nanocrystalline InN layers synthesized on Si (1 1 1) and GaN templates by RF sputtering S Valdueza-Felip, FB Naranjo, M González-Herráez, L Lahourcade, ...
Journal of crystal growth 312 (19), 2689-2694, 2010
16 2010 
Eva MonroyCEA, IRIG, PHELIQS-NPSC, Grenoble, FranceBestätigte E-Mail-Adresse bei cea.fr
