| Effect of the quantum well thickness on the performance of InGaN photovoltaic cells L Redaelli, A Mukhtarova, S Valdueza-Felip, A Ajay, C Bougerol, ... Applied Physics Letters 105 (13), 131105, 2014 | 74 | 2014 |
| High-sensitive SPR sensing with Indium Nitride as a dielectric overlay of optical fibers Ó Esteban, FB Naranjo, N Díaz-Herrera, S Valdueza-Felip, MC Navarrete, ... Sensors and Actuators B: Chemical 158 (1), 372-376, 2011 | 66 | 2011 |
| High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics S Valdueza-Felip, E Bellet-Amalric, A Núñez-Cascajero, Y Wang, ... Journal of Applied Physics 116 (23), 233504, 2014 | 45 | 2014 |
| Photovoltaic response of InGaN/GaN multiple-quantum well solar cells S Valdueza-Felip, A Mukhtarova, Q Pan, G Altamura, L Grenet, C Durand, ... Japanese Journal of Applied Physics 52 (8S), 08JH05, 2013 | 32 | 2013 |
| Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness A Mukhtarova, S Valdueza-Felip, L Redaelli, C Durand, C Bougerol, ... Applied Physics Letters 108 (16), 161907, 2016 | 31 | 2016 |
| Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration S Valdueza-Felip, A Mukhtarova, L Grenet, C Bougerol, C Durand, ... Applied Physics Express 7 (3), 032301, 2014 | 30 | 2014 |
| Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths FB Naranjo, PK Kandaswamy, S Valdueza-Felip, V Calvo, ... Applied Physics Letters 98 (3), 031902, 2011 | 26 | 2011 |
| Study of high In-content AlInN deposition on p-Si (111) by RF-sputtering A Núñez-Cascajero, L Monteagudo-Lerma, S Valdueza-Felip, C Navío, ... Japanese Journal of Applied Physics 55 (5S), 05FB07, 2016 | 23 | 2016 |
| Carrier localization in InN/InGaN multiple-quantum wells with high In-content S Valdueza-Felip, L Rigutti, FB Naranjo, P Ruterana, J Mangeney, ... Applied Physics Letters 101 (6), 062109, 2012 | 23 | 2012 |
| Two-step method for the deposition of AlN by radio frequency sputtering L Monteagudo-Lerma, S Valdueza-Felip, A Núñez-Cascajero, ... Thin Solid Films 545, 149-153, 2013 | 22 | 2013 |
| Pin InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm S Valdueza-Felip, A Ajay, L Redaelli, MP Chauvat, P Ruterana, T Cremel, ... Solar Energy Materials and Solar Cells 160, 355-360, 2017 | 21 | 2017 |
| Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells L Redaelli, A Mukhtarova, A Ajay, A Núñez-Cascajero, S Valdueza-Felip, ... Japanese Journal of Applied Physics 54 (7), 072302, 2015 | 21 | 2015 |
| Stranski–Krastanow growth of -oriented GaN/AlN quantum dots L Lahourcade, S Valdueza-Felip, T Kehagias, GP Dimitrakopulos, ... Applied Physics Letters 94 (11), 111901, 2009 | 21 | 2009 |
| Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5m S Valdueza-Felip, FB Naranjo, M Gonzalez-Herraez, H Fernández, J Solis, ... IEEE Photonics Technology Letters 20 (16), 1366-1368, 2008 | 20 | 2008 |
| Improvement of InN layers deposited on Si (111) by RF sputtering using a low-growth-rate InN buffer layer S Valdueza-Felip, J Ibáñez, E Monroy, M González-Herráez, L Artús, ... Thin Solid Films 520 (7), 2805-2809, 2012 | 19 | 2012 |
| Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering A Núñez-Cascajero, S Valdueza-Felip, R Blasco, M de La Mata, SI Molina, ... Journal of Alloys and Compounds 769, 824-830, 2018 | 18 | 2018 |
| In-rich AlxIn1− xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers A Núñez-Cascajero, S Valdueza-Felip, L Monteagudo-Lerma, E Monroy, ... Journal of Physics D: Applied Physics 50 (6), 065101, 2017 | 17 | 2017 |
| Influence of deposition conditions on nanocrystalline InN layers synthesized on Si (1 1 1) and GaN templates by RF sputtering S Valdueza-Felip, FB Naranjo, M González-Herráez, L Lahourcade, ... Journal of Crystal Growth 312 (19), 2689-2694, 2010 | 16 | 2010 |
| Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs L Monteagudo-Lerma, S Valdueza-Felip, FB Naranjo, P Corredera, ... Optics Express 21 (23), 27578-27586, 2013 | 15 | 2013 |
| Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer L Monteagudo-Lerma, S Valdueza-Felip, A Núñez-Cascajero, A Ruiz, ... Journal of Crystal Growth 434, 13-18, 2016 | 12 | 2016 |
Eva MonroyCEA, IRIG, PHELIQS-NPSC, Grenoble, FranceVerified email at cea.fr
