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Huadong Gan
Huadong Gan
Avalanche Technology Inc.
Bestätigte E-Mail-Adresse bei avalanche-technology.com
Titel
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Zitiert von
Jahr
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
S Ikeda, K Miura, H Yamamoto, K Mizunuma, HD Gan, M Endo, S Kanai, ...
Nature materials 9 (9), 721-724, 2010
39702010
Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions
H Sato, M Yamanouchi, K Miura, S Ikeda, HD Gan, K Mizunuma, ...
Applied Physics Letters 99 (4), 2011
1892011
Nature Mater. 9, 721 (2010)
S Ikeda, K Miura, H Yamamoto, K Mizunuma, HD Gan, M Endo, S Kanai, ...
181
MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers
K Mizunuma, S Ikeda, JH Park, H Yamamoto, H Gan, K Miura, ...
Applied Physics Letters 95 (23), 2009
1612009
Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co20Fe60B20-MgO structure
M Yamanouchi, R Koizumi, S Ikeda, H Sato, K Mizunuma, K Miura, ...
Journal of Applied Physics 109 (7), 2011
1372011
Magnetic random access memory having perpendicular enhancement layer
H Gan, Y Huai, Y Zhou, X Wang, Z Wang, BK Yen
US Patent 9,070,855, 2015
1072015
Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer
Z Wang, Y Zhou, H Gan, Y Huai
US Patent 9,608,038, 2017
842017
Recent progress of perpendicular anisotropy magnetic tunnel junctions for nonvolatile VLSI
S Ikeda, H Sato, M Yamanouchi, H Gan, K Miura, K Mizunuma, S Kanai, ...
Spin 2 (03), 1240003, 2012
832012
Magnetic memory element with composite perpendicular enhancement layer
Y Zhou, BK Yen, H Gan, Y Huai
US Patent 9,780,300, 2017
822017
Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions
HD Gan, H Sato, M Yamanouchi, S Ikeda, K Miura, R Koizumi, ...
Applied Physics Letters 99 (25), 2011
652011
Pd layer thickness dependence of tunnel magnetoresistance properties in CoFeB/MgO-based magnetic tunnel junctions with perpendicular anisotropy CoFe/Pd multilayers
K Mizunuma, M Yamanouchi, S Ikeda, H Sato, H Yamamoto, HD Gan, ...
Applied physics express 4 (2), 023002, 2011
582011
Transmission electron microscopy study on the effect of various capping layers on CoFeB/MgO/CoFeB pseudo spin valves annealed at different temperatures
SV Karthik, YK Takahashi, T Ohkubo, K Hono, HD Gan, S Ikeda, H Ohno
Journal of Applied Physics 111 (8), 2012
552012
Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions
HD Gan, S Ikeda, W Shiga, J Hayakawa, K Miura, H Yamamoto, ...
Applied Physics Letters 96 (19), 2010
552010
Magnetic random access memory with multilayered seed structure
H Gan, Y Huai, BK Yen, RK Malmhall, Y Zhou
US Patent App. 15/295,002, 2017
502017
Boron composition dependence of magnetic anisotropy and tunnel magnetoresistance in MgO/CoFe (B) based stack structures
S Ikeda, R Koizumi, H Sato, M Yamanouchi, K Miura, K Mizunuma, H Gan, ...
IEEE transactions on magnetics 48 (11), 3829-3832, 2012
482012
High performance perpendicular magnetic tunnel junction with Co/Ir interfacial anisotropy for embedded and standalone STT-MRAM applications
Y Huai, H Gan, Z Wang, P Xu, X Hao, BK Yen, R Malmhall, N Pakala, ...
Applied Physics Letters 112 (9), 2018
442018
Photocurrent response in a double barrier structure with quantum dots–quantum well inserted in central well
B Hu, X Zhou, Y Tang, H Gan, H Zhu, G Li, H Zheng
Physica E: Low-dimensional Systems and Nanostructures 33 (2), 355-358, 2006
432006
Multilayered seed structure for perpendicular MTJ memory element
H Gan, Y Huai, BK Yen, RK Malmhall, Y Zhou
US Patent 9,793,319, 2017
422017
Threshold switching selector and 1S1R integration development for 3D cross-point STT-MRAM
H Yang, X Hao, Z Wang, R Malmhall, H Gan, K Satoh, J Zhang, DH Jung, ...
2017 IEEE International Electron Devices Meeting (IEDM), 38.1. 1-38.1. 4, 2017
402017
Perpendicular STTMRAM device with balanced reference layer
H Gan, Y Zhou, Y Huai
US Patent 9,024,398, 2015
402015
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