| Reconfigurable nanowire electronics–A review WM Weber, A Heinzig, J Trommer, D Martin, M Grube, T Mikolajick Solid-State Electronics 102, 12-24, 2014 | 76 | 2014 |
| Silicon nanowires–a versatile technology platform T Mikolajick, A Heinzig, J Trommer, S Pregl, M Grube, G Cuniberti, ... physica status solidi (RRL)-Rapid Research Letters 7 (10), 793-799, 2013 | 69 | 2013 |
| High area capacity lithium-sulfur full-cell battery with prelitiathed silicon nanowire-carbon anodes for long cycling stability A Krause, S Dörfler, M Piwko, FM Wisser, T Jaumann, E Ahrens, ... Scientific reports 6 (1), 1-12, 2016 | 68 | 2016 |
| Reconfigurable nanowire electronics-enabling a single CMOS circuit technology WM Weber, A Heinzig, J Trommer, M Grube, F Kreupl, T Mikolajick IEEE Transactions on Nanotechnology 13 (6), 1020-1028, 2014 | 54 | 2014 |
| Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors D Martin, A Heinzig, M Grube, L Geelhaar, T Mikolajick, H Riechert, ... Physical Review Letters 107 (21), 216807, 2011 | 53 | 2011 |
| Mesoscopic analysis of leakage current suppression in ZrO2/Al2O3/ZrO2 nano-laminates D Martin, M Grube, W Weinreich, J Müller, WM Weber, U Schröder, ... Journal of Applied Physics 113 (19), 194103, 2013 | 44 | 2013 |
| Material prospects of reconfigurable transistor (rfets)–from silicon to germanium nanowires J Trommer, A Heinzig, A Heinrich, P Jordan, M Grube, S Slesazeck, ... MRS Online Proceedings Library (OPL) 1659, 225-230, 2014 | 22 | 2014 |
| Macroscopic and microscopic electrical characterizations of high-k ZrO 2 and ZrO 2/Al 2 O 3/ZrO 2 metal-insulator-metal structures D Martin, M Grube, W Weinreich, J Muller, L Wilde, E Erben, WM Weber, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2011 | 18 | 2011 |
| Local charge transport in nanoscale amorphous and crystalline regions of high-k (ZrO2)0.8(Al2O3)0.2 thin films D Martin, M Grube, WM Weber, J Rustig, O Bierwagen, L Geelhaar, ... Applied Physics Letters 95 (14), 142906-142906-3, 2009 | 17 | 2009 |
| Reconfigurable Si Nanowire Nonvolatile Transistors SJ Park, DY Jeon, S Piontek, M Grube, J Ocker, V Sessi, A Heinzig, ... Advanced Electronic Materials 4 (1), 1700399, 2018 | 16 | 2018 |
| Reconfigurable silicon nanowire devices and circuits: Opportunities and challenges WM Weber, J Trommer, M Grube, A Heinzig, M König, T Mikolajick 2014 Design, Automation & Test in Europe Conference & Exhibition (DATE), 1-6, 2014 | 7 | 2014 |
| Comparison of silicon nanowire growth on SiO2 and on carbon substrates A Krause, M Grube, T Mikolajick, WM Weber ECS Transactions 70 (1), 69, 2015 | 6 | 2015 |
| Applicability of molecular beam deposition for the growth of high-k oxides M Grube, D Martin, WM Weber, T Mikolajick, O Bierwagen, L Geelhaar, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2011 | 6 | 2011 |
| Size effect of electronic properties in highly arsenic-doped silicon nanowires T Mauersberger, I Ibrahim, M Grube, A Heinzig, T Mikolajick, WM Weber Solid-State Electronics 168, 107724, 2020 | 5 | 2020 |
| Influence of composition and bottom electrode properties on the local conductivity of TiN/HfTiO2 and TiN/Ru/HfTiO2 stacks D Martin, M Grube, P Reinig, L Oberbeck, J Heitmann, WM Weber, ... Applied Physics Letters 98 (1), 012901, 2011 | 5 | 2011 |
| The negative fixed charge of atomic layer deposited aluminium oxide—a two-dimensional SiO2/AlO x interface effect D Hiller, D Tröger, M Grube, D König, T Mikolajick Journal of Physics D: Applied Physics 54 (27), 275304, 2021 | 3 | 2021 |
| Reconfigurable nanowire electronics—Device principles and circuit prospects WM Weber, J Trommer, D Martin, M Grube, A Heinzig, T Mikolajick 2013 Proceedings of the European Solid-State Device Research Conference …, 2013 | 3 | 2013 |
| Molecular beam deposited zirconium dioxide as a high-κ dielectric for future GaN based power devices A Freese, M Grube, A Wachowiak, M Geidel, B Adolphi, S Schmult, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013 | 3 | 2013 |
| Al2O3-TiOx as full area passivating contacts for silicon surfaces utilizing oxygen scavenging titanium interlayers D Tröger, M Grube, J Lehnert, T Mikolajick Solar Energy Materials and Solar Cells 215, 110651, 2020 | 2 | 2020 |
| Towards Full-area Passivating Contacts for Silicon Surfaces based on Al2O3-TiOxDouble Layers D Tröger, M Grube, M Knaut, J Reif, JW Bartha, T Mikolajick 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A …, 2018 | 2 | 2018 |
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for nanoelectronic materials, TU DresdenVerified email at namlab.com
