| Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application R Sarkar, S Bhunia, D Nag, BC Barik, K Das Gupta, D Saha, S Ganguly, ... Applied Physics Letters 115 (6), 2019 | 18 | 2019 |
| A highly sensitive and robust GaN ultraviolet photodetector fabricated on 150-mm Si (111) wafer RS Pokharia, R Sarkar, S Singh, S Deb, S Suihkonen, J Lemettinen, ... IEEE Transactions on Electron Devices 68 (6), 2796-2803, 2021 | 12 | 2021 |
| Carrier-induced defect saturation in green InGaN LEDs: A potential phenomenon to enhance efficiency at higher wavelength regime D Nag, T Aggarwal, S Sinha, R Sarkar, S Bhunia, YF Chen, S Ganguly, ... Acs Photonics 8 (3), 926-932, 2021 | 12 | 2021 |
| Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime D Nag, R Sarkar, S Bhunia, T Aggarwal, K Ghosh, S Sinha, S Ganguly, ... Nanotechnology 31 (49), 495705, 2020 | 12 | 2020 |
| Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K R Sarkar, BB Upadhyay, S Bhunia, RS Pokharia, D Nag, S Surapaneni, ... IEEE Transactions on Electron Devices 68 (6), 2653-2660, 2021 | 9 | 2021 |
| Engineering V-shaped pits in InGaN layers grown by PA-MBE toward optimizing the active region of green LEDs D Nag, T Aggarwal, R Sarkar, S Bhunia, S Ganguly, D Saha, A Laha JOSA B 36 (3), 616-623, 2019 | 9 | 2019 |
| Decomposition resilience of GaN nanowires, crested and surficially passivated by AlN S Bhunia, R Sarkar, D Nag, K Ghosh, KR Khiangte, S Mahapatra, A Laha Crystal Growth & Design 20 (8), 4867-4874, 2020 | 8 | 2020 |
| Triaxially uniform high-quality AlxGa (1− x) N (x∼ 50%) nanowires on template free sapphire substrate R Sarkar, K Ghosh, S Bhunia, D Nag, KR Khiangte, A Laha Nanotechnology 30 (6), 065603, 2018 | 6 | 2018 |
| Piezoresponse force microscopy (PFM) characterization of GaN nanowires grown by Plasma assisted Molecular beam epitaxy (PA-MBE) N Tiwary, R Sarkar, VR Rao, A Laha 2016 Joint IEEE International Symposium on the Applications of …, 2016 | 6 | 2016 |
| Growth of uniform Mg-doped p-AlGaN nanowires using plasma assisted molecular beam epitaxy technique for UV-A emitters R Sarkar, S Bhunia, D Jana, D Nag, S Chatterjee, A Laha Nanotechnology 33 (38), 384001, 2022 | 3 | 2022 |
| Impact of ex-situ heating on carrier kinetics in GaN/InGaN based green LEDs D Nag, S Sinha, R Sarkar, RH Horng, A Laha ECS Journal of Solid State Science and Technology 10 (3), 035004, 2021 | 3 | 2021 |
| Epitaxial lanthanide oxide on III-Nitride substrates for high power MOS HEMT application S Das, K Gosh, R Sarkar, S Dutta, S Mukherjee, S Ganguly, A Laha 41st WOCSDICE: Workshop on Compound Semiconductor Devices and Integrated …, 2017 | 3 | 2017 |
| Comprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si (111) substrates by plasma assisted molecular beam … R Sarkar, R Fandan, KR Khiangte, S Chouksey, AM Josheph, S Das, ... arXiv preprint arXiv:1603.08603, 2016 | 2 | 2016 |
| Scaling Nanowire-Supported GaN Quantum Dots to the Sub-10 nm Limit, Yielding Complete Suppression of the Giant Built-in Potential S Bhunia, R Sarkar, D Nag, D Jana, S Mahapatra, A Laha Crystal Growth & Design 23 (6), 3935-3941, 2023 | 1 | 2023 |
| Study of surface over-layer contribution to Dislocation Assisted Tunneling current: Strategy to improve Pt/n+–GaN Schottky characteristics VSSNV Bellamkonda, S Bhunia, R Sarkar, K Ghosh, A Laha Materials Research Express 6 (10), 105917, 2019 | 1 | 2019 |
| All Epitaxy Nd2O3/AlGaN/GaN MOSHEMT: Increased Linearity and Thermal Stability U Singh, H Genath, R Sarkar, S Bhunia, J Kruegener, HJ Osten, A Laha | | 2024 |
| Compact thermally stable high voltage FinFET with 40 nm tox and lateral break-down> 35 V for 3D NAND flash periphery application A Spessot, P Matagne, H Arimura, J Ganguly, R Ritzenthaler, J Bastos, ... Japanese Journal of Applied Physics 63 (3), 03SP12, 2024 | | 2024 |
| Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors N Rai, R Sarkar, A Mahajan, A Laha, D Saha, S Ganguly Journal of Applied Physics 134 (24), 2023 | | 2023 |
| All Nitride NbN/AlGaN/GaN Schottky Gate HEMT on (0001) 4H-SiC: Improved DC Performance and Threshold Voltage Stability U Singh, R Sarkar, A Shandilya, A Laha Authorea Preprints, 2023 | | 2023 |
| Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature S Bhunia, A Majumder, S Chatterjee, R Sarkar, D Nag, K Saha, ... arXiv preprint arXiv:2311.14821, 2023 | | 2023 |
Apurba LahaProfessor, Department of Electrical Engineering, Indian Institute of Technology BombayVerified email at ee.iitb.ac.in
