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Dr. Manodipan Sahoo
Dr. Manodipan Sahoo
Assistant Professor, Department of ECE, IIT(ISM), Dhanbad
Bestätigte E-Mail-Adresse bei iitism.ac.in - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Modeling and analysis of crosstalk induced effects in multiwalled carbon nanotube bundle interconnects: An ABCD parameter-based approach
M Sahoo, P Ghosal, H Rahaman
IEEE Transactions on Nanotechnology 14 (2), 259-274, 2015
612015
Modeling and analysis of crosstalk induced overshoot/undershoot effects in multilayer graphene nanoribbon interconnects and its impact on gate oxide reliability
M Sahoo, H Rahaman
Microelectronics Reliability 63, 231-238, 2016
162016
Performance modeling and analysis of carbon nanotube bundles for future VLSI circuit applications
M Sahoo, P Ghosal, H Rahaman
Journal of Computational Electronics 13 (3), 673-688, 2014
162014
An ABCD parameter-based modeling and analysis of crosstalk induced effects in single-walled carbon nanotube bundle interconnects
M Sahoo, P Ghosal, H Rahaman
Fifth Asia Symposium on Quality Electronic Design (ASQED 2013), 264-273, 2013
132013
Performance analysis of multiwalled carbon nanotube bundles
M Sahoo, H Rahaman
2013 IEEE XXXIII International Scientific Conference Electronics and …, 2013
102013
An ABCD parameter based modeling and analysis of crosstalk induced effects in multilayer graphene nano ribbon interconnects
M Sahoo, H Rahaman
2014 IEEE International Symposium on Circuits and Systems (ISCAS), 1138-1142, 2014
92014
An ABCD parameter based modeling and analysis of crosstalk induced effects in multiwalled carbon nanotube bundle interconnects
M Sahoo, P Ghosal, H Rahaman
2014 27th International Conference on VLSI Design and 2014 13th …, 2014
82014
Analysis of crosstalk-induced effects in multilayer graphene nanoribbon interconnects
M Sahoo, H Rahaman
Journal of Circuits, Systems and Computers 26 (06), 1750102, 2017
72017
Modeling of crosstalk induced effects in copper-based nanointerconnects: an ABCD parameter matrix-based approach
M Sahoo, H Rahaman
Journal of Circuits, Systems and Computers 24 (02), 1540007, 2015
72015
Investigation on the effect of gate dielectric and other device parameters on digital performance of silicene nanoribbon tunnel FET
NK Singh, M Sahoo
IEEE Transactions on Electron Devices 67 (7), 2966-2973, 2020
52020
Performance and signal integrity analysis of intercalation‐doped MLVGNR interconnects
B Kumari, M Sahoo
IET Circuits, Devices & Systems 14 (2), 192-199, 2020
52020
Impact of line resistance variations on crosstalk delay and noise in multilayer graphene nano ribbon interconnects
M Sahoo, H Rahaman
2014 Fifth International Symposium on Electronic System Design, 94-98, 2014
52014
On the suitability of single-walled carbon nanotube bundle interconnects for high-speed and power-efficient applications
M Sahoo, H Rahaman, BB Bhattacharya
Journal of Low Power Electronics 10 (3), 479-494, 2014
52014
Efficient and compact electrical modeling of multi walled carbon nanotube interconnects
M Sahoo, P Ghosal, H Rahaman
2012 International Symposium on Electronic System Design (ISED), 236-240, 2012
42012
A 45 uW 13 pJ/conv-step 7.4-ENOB 40 kS/s SAR ADC for digital microfluidic biochip applications
I Das, M Sahoo, P Roy, H Rahaman
18th International Symposium on VLSI Design and Test, 1-6, 2014
32014
A new feedback circuit based charge-pump for wide-range and low-jitter DLL suitable for PET imaging applications
SA Mondal, S Pal, M Sahoo, P Mondal, H Rahaman
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS), 1-5, 2014
32014
Temperature and dielectric surface roughness dependent performance analysis of Cu-graphene hybrid interconnects
R Kumar, B Kumari, S Kumar, M Sahoo, R Sharma
2020 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS), 1-3, 2020
22020
A compact short-channel analytical drain current model of asymmetric dual-gate TMD FET in subthreshold region including fringing field effects
NK Singh, M Kumari, M Sahoo
IEEE Access 8, 207982-207990, 2020
22020
A Surface Potential-Based Model for Dual Gate Bilayer Graphene Field Effect Transistor Including the Capacitive Effects
S Bardhan, M Sahoo, H Rahaman
Journal of Circuits, Systems and Computers 28 (14), 1950241, 2019
22019
Boltzmann transport equation‐based semi‐classical drain current model for bilayer GFET including scattering effects
S Bardhan, M Sahoo, H Rahaman
IET Circuits, Devices & Systems 13 (4), 456-464, 2019
22019
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