| Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation N Batra, J Gope, V Vandana, J Panigrahi, R Singh, PK Singh AIP Advances 5 (6), 2015 | 74 | 2015 |
| Silicon surface passivation using thin HfO2 films by atomic layer deposition J Gope, N Batra, J Panigrahi, R Singh, KK Maurya, R Srivastava, ... Applied Surface Science 357, 635-642, 2015 | 61 | 2015 |
| Impedance spectroscopy of crystalline silicon solar cell: Observation of negative capacitance J Panigrahi, R Singh, N Batra, J Gope, M Sharma, P Pathi, SK Srivastava, ... Solar Energy 136, 412-420, 2016 | 36 | 2016 |
| Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation R Singh, J Panigrahi, PK Singh RSC advances 6 (100), 97720-97727, 2016 | 19 | 2016 |
| Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films N Batra, J Gope, R Singh, J Panigrahi, S Tyagi, P Pathi, SK Srivastava, ... Physical Chemistry Chemical Physics 16 (39), 21804-21811, 2014 | 19 | 2014 |
| Dual Metal Gate and Conventional MOSFET at Sub nm for Analog Application SA Rajbir Singh VLSI Design & Communication Systems 3 (1), 111, 2012 | 6* | 2012 |
Jagannath PanigrahiNational Physical laboratoryVerified email at nplindia.org
