John Connolly
John Connolly
CEO, Innovative Photonic Solutions
Bestätigte E-Mail-Adresse bei innovativephotonics.com
Titel
Zitiert von
Zitiert von
Jahr
High-power (> 10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers
A Al-Muhanna, LJ Mawst, D Botez, DZ Garbuzov, RU Martinelli, ...
Applied Physics Letters 73 (9), 1182-1184, 1998
2381998
8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers
LJ Mawst, A Bhattacharya, J Lopez, D Botez, DZ Garbuzov, L DeMarco, ...
Applied Physics Letters 69 (11), 1532-1534, 1996
2101996
Multiwavelength 10-GHz picosecond pulse generation from a single-stripe semiconductor diode laser
H Shi, J Finlay, GA Alphonse, JC Connolly, PJ Delfyett
Ieee Photonics Technology Letters 9 (11), 1439-1441, 1997
2021997
2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
DZ Garbuzov, H Lee, V Khalfin, R Martinelli, JC Connolly, GL Belenky
IEEE Photonics Technology Letters 11 (7), 794-796, 1999
1851999
In situ combustion measurements of CO with diode-laser absorption near 2.3 µm
J Wang, M Maiorov, DS Baer, DZ Garbuzov, JC Connolly, RK Hanson
Applied Optics 39 (30), 5579-5589, 2000
1542000
Demonstration of phase correlation in multiwavelength mode-locked semiconductor diode lasers
H Shi, I Nitta, A Schober, PJ Delfyett, G Alphonse, J Connolly
Optics Letters 24 (4), 238-240, 1999
1521999
High‐power phase‐locked arrays of index‐guided diode lasers
D Botez, JC Connolly
Applied physics letters 43 (12), 1096-1098, 1983
1461983
Morphology-dependent resonances of a microsphere–optical fiber system
G Griffel, S Arnold, D Taskent, A Serpengüzel, J Connolly, N Morris
Optics letters 21 (10), 695-697, 1996
1431996
Continuous-wave operation of broadened-waveguide W quantum-well diode lasers up to
WW Bewley, H Lee, I Vurgaftman, RJ Menna, CL Felix, RU Martinelli, ...
Applied Physics Letters 76 (3), 256-258, 2000
1422000
Ultralow‐loss broadened‐waveguide high‐power 2 μm AlGaAsSb/InGaAsSb/GaSb separate‐confinement quantum‐well lasers
DZ Garbuzov, RU Martinelli, H Lee, PK York, RJ Menna, JC Connolly, ...
Applied physics letters 69 (14), 2006-2008, 1996
1401996
Multiwavelength mode-locked dense wavelength division multiplexed optical communication systems
JH Abeles, JC Connolly, WE Stephens, RL Camisa
US Patent 6,014,237, 2000
1312000
Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
DZ Garbuzov, JC Connolly, RF Karlicek Jr, IT Ferguson
US Patent 6,404,125, 2002
1242002
4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes
DZ Garbuzov, RU Martinelli, H Lee, RJ Menna, PK York, LA DiMarco, ...
Applied physics letters 70 (22), 2931-2933, 1997
1221997
Room‐temperature 2.78 μm AlGaAsSb/InGaAsSb quantum‐well lasers
H Lee, PK York, RJ Menna, RU Martinelli, DZ Garbuzov, SY Narayan, ...
Applied physics letters 66 (15), 1942-1944, 1995
1171995
1.5 µm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power
D Garbuzov, L Xu, SR Forrest, R Menna, R Martinelli, JC Connolly
Electronics Letters 32 (18), 1717-1719, 1996
1131996
Low-threshold InGaAsP ring lasers fabricated using bi-level dry etching
G Griffel, JH Abeles, RJ Menna, AM Braun, JC Connolly, M King
IEEE Photonics Technology Letters 12 (2), 146-148, 2000
872000
Above-room-temperature optically pumped midinfrared W lasers
WW Bewley, CL Felix, EH Aifer, I Vurgaftman, LJ Olafsen, JR Meyer, ...
Applied physics letters 73 (26), 3833-3835, 1998
871998
A potential remote sensor of CO in vehicle exhausts using 2.3 µm diode lasers
J Wang, M Maiorov, JB Jeffries, DZ Garbuzov, JC Connolly, RK Hanson
Measurement Science and Technology 11 (11), 1576, 2000
862000
High-power separate-confinement heterostructure AlGaAs/GaAs laser diodes with broadened waveguide
DZ Garbuzov, JH Abeles, NA Morris, PD Gardner, AR Triano, MG Harvey, ...
Laser Diodes and Applications II 2682, 20-26, 1996
841996
Distributed feedback-channeled substrate planar semiconductor laser
EA Vangieson, PK York, JC Connolly
US Patent 5,295,150, 1994
841994
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