Jian-Hao Chen
Jian-Hao Chen
Associate Professor, Peking University
Verified email at - Homepage
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Intrinsic and extrinsic performance limits of graphene devices on SiO2
JH Chen, C Jang, S Xiao, M Ishigami, MS Fuhrer
Nature nanotechnology 3 (4), 206-209, 2008
Atomic structure of graphene on SiO2
M Ishigami, JH Chen, WG Cullen, MS Fuhrer, ED Williams
Nano letters 7 (6), 1643-1648, 2007
Charged-impurity scattering in graphene
JH Chen, C Jang, S Adam, MS Fuhrer, ED Williams, M Ishigami
Nature Physics 4 (5), 377-381, 2008
Charged-impurity scattering in graphene
M Ishigami, J Chen, C Jang, ED Williams, MS Fuhrer
Bulletin of the American Physical Society 53, 2008
Defect scattering in graphene
JH Chen, WG Cullen, C Jang, MS Fuhrer, ED Williams
Physical review letters 102 (23), 236805, 2009
Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short-and long-range potential scattering
C Jang, S Adam, JH Chen, ED Williams, SD Sarma, MS Fuhrer
Physical review letters 101 (14), 146805, 2008
Tunable Kondo effect in graphene with defects
JH Chen, L Li, WG Cullen, ED Williams, MS Fuhrer
Nature Physics 7 (7), 535-538, 2011
Printed graphene circuits
JH Chen, M Ishigami, C Jang, DR Hines, MS Fuhrer, ED Williams
Advanced Materials 19 (21), 3623-3627, 2007
Atomic resolution imaging of grain boundary defects in monolayer chemical vapor deposition-grown hexagonal boron nitride
AL Gibb, N Alem, JH Chen, KJ Erickson, J Ciston, A Gautam, M Linck, ...
Journal of the American Chemical Society 135 (18), 6758-6761, 2013
High-fidelity conformation of graphene to SiO 2 topographic features
WG Cullen, M Yamamoto, KM Burson, JH Chen, C Jang, L Li, MS Fuhrer, ...
Physical review letters 105 (21), 215504, 2010
Nonlinear photoresponse of type-II Weyl semimetals
J Ma, Q Gu, Y Liu, J Lai, P Yu, X Zhuo, Z Liu, JH Chen, J Feng, D Sun
Nature materials 18 (5), 476-481, 2019
Diffusive charge transport in graphene on SiO 2
JH Chen, C Jang, M Ishigami, S Xiao, WG Cullen, ED Williams, MS Fuhrer
Solid State Communications 149 (27), 1080-1086, 2009
On the Quantum Spin Hall Gap of Monolayer 1T′‐WTe2
F Zheng, C Cai, S Ge, X Zhang, X Liu, H Lu, Y Zhang, J Qiu, T Taniguchi, ...
Advanced Materials 28 (24), 4845-4851, 2016
Hooge’s constant for carbon nanotube field effect transistors
M Ishigami, JH Chen, ED Williams, D Tobias, YF Chen, MS Fuhrer
Applied physics letters 88 (20), 203116, 2006
Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering
JH Chen, G Autès, N Alem, F Gargiulo, A Gautam, M Linck, C Kisielowski, ...
Physical Review B 89 (12), 121407, 2014
Charged impurity scattering in bilayer graphene
S Xiao, JH Chen, S Adam, ED Williams, MS Fuhrer
Physical Review B 82 (4), 041406, 2010
Anisotropic Broadband Photoresponse of Layered Type‐II Weyl Semimetal MoTe2
J Lai, X Liu, J Ma, Q Wang, K Zhang, X Ren, Y Liu, Q Gu, X Zhuo, W Lu, ...
Advanced Materials 30 (22), 1707152, 2018
Broadband Anisotropic Photoresponse of the “Hydrogen Atom” Version Type-II Weyl Semimetal Candidate TaIrTe4
J Lai, Y Liu, J Ma, X Zhuo, Y Peng, W Lu, Z Liu, J Chen, D Sun
ACS nano 12 (4), 4055-4061, 2018
Gate tunable giant anisotropic resistance in ultra-thin GaTe
H Wang, ML Chen, M Zhu, Y Wang, B Dong, X Sun, X Zhang, S Cao, X Li, ...
Nature communications 10 (1), 2302, 2019
Wafer-scale growth of single-crystal 2D semiconductor on perovskite oxides for high-performance transistors
C Tan, M Tang, J Wu, Y Liu, T Li, Y Liang, B Deng, Z Tan, T Tu, Y Zhang, ...
Nano letters 19 (3), 2148-2153, 2019
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