Joseph W. Lyding
Joseph W. Lyding
Professor of Electrical and Computer Engineering, University of Illinois
Verified email at illinois.edu
Title
Cited by
Cited by
Year
The influence of edge structure on the electronic properties of graphene quantum dots and nanoribbons
KA Ritter, JW Lyding
Nature materials 8 (3), 235-242, 2009
11912009
Atomic-scale desorption through electronic and vibrational excitation mechanisms
TC Shen, C Wang, GC Abeln, JR Tucker, JW Lyding, P Avouris, ...
Science 268 (5217), 1590-1592, 1995
8781995
Nanoscale patterning and oxidation of H‐passivated Si (100)‐2× 1 surfaces with an ultrahigh vacuum scanning tunneling microscope
JW Lyding, TC Shen, JS Hubacek, JR Tucker, GC Abeln
Applied physics letters 64 (15), 2010-2012, 1994
6241994
Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition
JD Wood, SW Schmucker, AS Lyons, E Pop, JW Lyding
Nano letters 11 (11), 4547-4554, 2011
4522011
Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing
JW Lyding, K Hess, IC Kizilyalli
Applied Physics Letters 68 (18), 2526-2528, 1996
4131996
Silicon-based molecular nanotechnology
MC Hersam, NP Guisinger, JW Lyding
Nanotechnology 11 (2), 70, 2000
2682000
Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si (100)
ET Foley, AF Kam, JW Lyding, P Avouris
Physical review letters 80 (6), 1336, 1998
2551998
Cofacial assembly of partially oxidized metallamacrocycles as an approach to controlling lattice architecture in low-dimensional molecular solids. Chemical, structural …
BN Diel, T Inabe, JW Lyding, KF Schoch Jr, CR Kannewurf, TJ Marks
Journal of the American Chemical Society 105 (6), 1551-1567, 1983
2261983
Breaking individual chemical bonds via STM-induced excitations
P Avouris, RE Walkup, AR Rossi, HC Akpati, P Nordlander, TC Shen, ...
Surface science 363 (1-3), 368-377, 1996
2051996
STM-induced H atom desorption from Si (100): isotope effects and site selectivity
P Avouris, RE Walkup, AR Rossi, TC Shen, GC Abeln, JR Tucker, ...
Chemical Physics Letters 257 (1-2), 148-154, 1996
1851996
Giant isotope effect in hot electron degradation of metal oxide silicon devices
K Hess, IC Kizilyalli, JW Lyding
IEEE Transactions on Electron Devices 45 (2), 406-416, 1998
1811998
Atomic-scale evidence for potential barriers and strong carrier scattering at graphene grain boundaries: a scanning tunneling microscopy study
JC Koepke, JD Wood, D Estrada, ZY Ong, KT He, E Pop, JW Lyding
ACS nano 7 (1), 75-86, 2013
1612013
Brockenbrough R., and Gammie G
JW Lyding, S Skala, JS Hubacek
J. of Microscopy 152, 371-378, 1988
1571988
Structure of GaAs(100)-c(8×2) determined by scanning tunneling microscopy
SL Skala, JS Hubacek, JR Tucker, JW Lyding, ST Chou, KY Cheng
Physical Review B 48 (12), 9138, 1993
1241993
Computer automated charge transport measurement system
JW Lyding, HO Marcy, TJ Marks, CR Kannewurf
IEEE transactions on instrumentation and measurement 37 (1), 76-80, 1988
1231988
Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability
IC Kizilyalli, JW Lyding, K Hess
IEEE Electron Device Letters 18 (3), 81-83, 1997
1191997
Ultrahigh-vacuum scanning tunneling microscopy and spectroscopy of single-walled carbon nanotubes on hydrogen-passivated Si (100) surfaces
PM Albrecht, JW Lyding
Applied Physics Letters 83 (24), 5029-5031, 2003
1152003
Scanning tunneling microscopy study and nanomanipulation of graphene-coated water on mica
KT He, JD Wood, GP Doidge, E Pop, JW Lyding
Nano letters 12 (6), 2665-2672, 2012
1062012
Nanometer scale patterning and oxidation of silicon surfaces with an ultrahigh vacuum scanning tunneling microscope
JW Lyding, GC Abeln, TC Shen, C Wang, JR Tucker
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994
1031994
0. Schneider, M. Hanaek, CR. Kannewurf, TJ Mark and LH Schwart
BN Diel, T Inabe, NK Jaggi, JW Lyding
J. Am. Chem. Sot 106, 3207, 1984
1011984
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Articles 1–20