Unipolar Switching Behaviors of RTO RRAM WC Chien, YC Chen, EK Lai, YD Yao, P Lin, SF Horng, J Gong, TH Chou, ...
IEEE electron device letters 31 (2), 126-128, 2010
122 2010 A forming-free WOx resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability WC Chien, YR Chen, YC Chen, ATH Chuang, FM Lee, YY Lin, EK Lai, ...
2010 International Electron Devices Meeting, 19.2. 1-19.2. 4, 2010
112 2010 Aluminum copper oxide based memory devices and methods for manufacture WC Chien, KP Chang, YC Chen, EK Lai, KY Hsieh
US Patent 8,067,815, 2011
103 2011 3D cross-point phase-change memory for storage-class memory HY Cheng, F Carta, WC Chien, HL Lung, MJ BrightSky
Journal of Physics D: Applied Physics 52 (47), 473002, 2019
85 2019 Graded metal oxide resistance based semiconductor memory device MD Lee, EK Lai, KY Hsieh, WC Chien, CH Yeh
US Patent 8,488,362, 2013
82 2013 Graded metal oxide resistance based semiconductor memory device MD Lee, EK Lai, KY Hsieh, WC Chien, CH Yeh
US Patent 8,488,362, 2013
82 2013 Resistive memory structure with buffer layer WC Chien, KP Chang, EK Lai, KY Hsieh
US Patent 7,777,215, 2010
73 2010 Multi-layer sidewall WOX resistive memory suitable for 3D ReRAM WC Chien, FM Lee, YY Lin, MH Lee, SH Chen, CC Hsieh, EK Lai, HH Hui, ...
2012 Symposium on VLSI technology (VLSIT), 153-154, 2012
70 2012 An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM HY Cheng, WC Chien, IT Kuo, EK Lai, Y Zhu, JL Jordan-Sweet, A Ray, ...
2017 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2017
55 2017 Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory HY Cheng, WC Chien, IT Kuo, CW Yeh, L Gignac, W Kim, EK Lai, YF Lin, ...
2018 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2018
50 2018 Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material HY Cheng, WC Chien, M BrightSky, YH Ho, Y Zhu, A Ray, R Bruce, W Kim, ...
2015 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2015
50 2015 Multi-level 40nm WOX resistive memory with excellent reliability WC Chien, MH Lee, FM Lee, YY Lin, HL Lung, KY Hsieh, CY Lu
2011 International electron devices meeting, 31.5. 1-31.5. 4, 2011
47 2011 Resistive RAM and fabrication method IY Chen, WC Chien
US Patent 9,680,095, 2017
45 2017 Operation method for multi-level switching of metal-oxide based RRAM WC Chien, KP Chang, YC Chen, EK Lai, KY Hsieh
US Patent 7,960,224, 2011
43 2011 A study on OTS-PCM pillar cell for 3-D stackable memory WC Chien, CW Yeh, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ...
IEEE Transactions on Electron Devices 65 (11), 5172-5179, 2018
37 2018 Operating method of electrical pulse voltage for RRAM application KP Chang, YC Chen, WC Chien, EK Lai
US Patent 8,134,865, 2012
35 2012 Nonvolatile memory device having a transistor connected in parallel with a resistance switching device YC Chen, WC Chien, FM Lee
US Patent 8,331,127, 2012
32 2012 Verification algorithm for metal-oxide resistive memory WC Chien, MH Lee, YR Chen
US Patent 8,699,258, 2014
29 2014 A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM WC Chien, YC Chen, EK Lai, FM Lee, YY Lin, ATH Chuang, KP Chang, ...
Applied Physics A 102, 901-907, 2011
27 2011 Enhancement and inverse behaviors of magnetoimpedance in a magnetotunneling junction by driving frequency WC Chien, CK Lo, LC Hsieh, YD Yao, XF Han, ZM Zeng, TY Peng, P Lin
Applied physics letters 89 (20), 2006
27 2006