Jan Schmidt
Jan Schmidt
Professor, Institute for Solar Energy Research Hamelin (ISFH) & Leibniz University Hannover
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Improved quantitative description of Auger recombination in crystalline silicon
A Richter, SW Glunz, F Werner, J Schmidt, A Cuevas
Phys. Rev. B 86, 165202/1-14, 2012
Silicon surface passivation by atomic-layer-deposited Al2O3
B Hoex, J Schmidt, P Pohl, MCM van de Sanden, WMM Kessels
Journal of Applied Physics 104, 044903, 2008
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3
J Schmidt, A Merkle, R Brendel, B Hoex, MCM de Sanden, WMM Kessels
Progress in photovoltaics: research and applications 16 (6), 461-466, 2008
Structure and transformation of the metastable boron-and oxygen-related defect center in crystalline silicon
J Schmidt, K Bothe
Physical review B 69 (2), 024107, 2004
Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3
B Hoex, J Schmidt, R Bock, PP Altermatt, MCM Van De Sanden, ...
Applied Physics Letters 91 (11), 2007
Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon
C Schinke, P Peest, R Brendel, J Schmidt, K Bothe, M Vogt, I Kröger, ...
AIP Advances 5, 067168, 2015
Electronically activated boron-oxygen-related recombination centers in crystalline silicon
K Bothe, J Schmidt
Journal of Applied Physics 99 (1), 2006
Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation
T Lauinger, J Schmidt, AG Aberle, R Hezel
Applied physics letters 68 (9), 1232-1234, 1996
Fundamental boron–oxygen‐related carrier lifetime limit in mono‐and multicrystalline silicon
K Bothe, R Sinton, J Schmidt
Progress in photovoltaics: Research and Applications 13 (4), 287-296, 2005
Surface passivation of crystalline silicon solar cells: Present and future
J Schmidt, R Peibst, R Brendel
Sol. En. Mat. Sol. Cells 187, 39-54, 2018
Investigation of carrier lifetime instabilities in Cz-grown silicon
J Schmidt, AG Aberle, R Hezel
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists …, 1997
Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks
J Schmidt, M Kerr, A Cuevas
Semiconductor science and technology 16 (3), 164, 2001
Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide
MJ Kerr, J Schmidt, A Cuevas, JH Bultman
Journal of applied physics 89 (7), 3821-3826, 2001
19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon
JH Petermann, D Zielke, J Schmidt, F Haase, EG Rojas, R Brendel
Progress in Photovoltaics: Research and Applications 20 (1), 1-5, 2012
Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon
J Schmidt, A Cuevas
Journal of Applied Physics 86 (6), 3175-3180, 1999
Electronic and chemical properties of the c-Si/Al2O3 interface
F Werner, B Veith, D Zielke, L Kühnemund, C Tegenkamp, M Seibt, ...
Journal of Applied Physics 109 (11), 2011
Accurate method for the determination of bulk minority-carrier lifetimes of mono-and multicrystalline silicon wafers
J Schmidt, AG Aberle
Journal of Applied Physics 81 (9), 6186-6199, 1997
Industrial silicon solar cells applying the passivated emitter and rear cell (PERC) concept – a review
T Dullweber, J Schmidt
IEEE Journal of Photovoltaics 6, 1366, 2016
Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks
J Schmidt, B Veith, R Brendel
physica status solidi (RRL)–Rapid Research Letters 3 (9), 287-289, 2009
Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition
J Schmidt, AG Aberle
Journal of Applied Physics 85, 3626-3633, 1999
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