| Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film C Yang, D Souchay, M Kneiß, M Bogner, HM Wei, M Lorenz, O Oeckler, ... Nature communications 8 (1), 16076, 2017 | 328 | 2017 |
| Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit C Yang, M Kneiβ, M Lorenz, M Grundmann Proceedings of the National Academy of Sciences 113 (46), 12929-12933, 2016 | 214 | 2016 |
| Room-temperature Domain-epitaxy of Copper Iodide Thin Films for Transparent CuI/ZnO Heterojunctions with High Rectification Ratios Larger than 109 C Yang, M Kneiß, FL Schein, M Lorenz, M Grundmann Scientific reports 6 (1), 21937, 2016 | 129 | 2016 |
| Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality M Kneiß, A Hassa, D Splith, C Sturm, H Von Wenckstern, T Schultz, ... APL Materials 7 (2), 2019 | 114 | 2019 |
| Heteroepitaxial growth of α-, β-, γ-and κ-Ga2O3 phases by metalorganic vapor phase epitaxy V Gottschalch, S Merker, S Blaurock, M Kneiß, U Teschner, M Grundmann, ... Journal of Crystal Growth 510, 76-84, 2019 | 67 | 2019 |
| Epitaxial stabilization of single phase κ-(InxGa1− x) 2O3 thin films up to x= 0.28 on c-sapphire and κ-Ga2O3 (001) templates by tin-assisted VCCS-PLD M Kneiß, A Hassa, D Splith, C Sturm, H Von Wenckstern, M Lorenz, ... APL materials 7 (10), 2019 | 49 | 2019 |
| Structural, optical, and electrical properties of orthorhombic κ-(InxGa1− x) 2O3 thin films A Hassa, H Von Wenckstern, D Splith, C Sturm, M Kneiß, V Prozheeva, ... APL Materials 7 (2), 2019 | 45 | 2019 |
| A Review of the SegmentedTarget Approach to Combinatorial Material Synthesis by PulsedLaser Deposition H von Wenckstern, M Kneiß, A Hassa, P Storm, D Splith, M Grundmann physica status solidi (b) 257 (7), 1900626, 2020 | 33 | 2020 |
| Epitaxial κ-(AlxGa1− x) 2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD P Storm, M Kneiß, A Hassa, T Schultz, D Splith, H Von Wenckstern, ... APL Materials 7 (11), 2019 | 32 | 2019 |
| Suppression of Grain Boundary Scattering in Multifunctional pType Transparent γCuI Thin Films due to Interface Tunneling Currents M Kneiß, C Yang, J BarzolaQuiquia, G Benndorf, H von Wenckstern, ... Advanced Materials Interfaces 5 (6), 1701411, 2018 | 32 | 2018 |
| Control of phase formation of (AlxGa1− x) 2O3 thin films on c-plane Al2O3 A Hassa, C Wouters, M Kneiß, D Splith, C Sturm, H von Wenckstern, ... Journal of Physics D: Applied Physics 53 (48), 485105, 2020 | 31 | 2020 |
| Solubility limit and material properties of a κ-(AlxGa1− x) 2O3 thin film with a lateral cation gradient on (00.1) Al2O3 by tin-assisted PLD A Hassa, C Sturm, M Kneiß, D Splith, H Von Wenckstern, T Schultz, ... APL Materials 8 (2), 2020 | 30 | 2020 |
| Growth, structural and optical properties of coherent κ-(AlxGa1− x) 2O3/κ-Ga2O3 quantum well superlattice heterostructures M Kneiß, P Storm, A Hassa, D Splith, H Von Wenckstern, M Lorenz, ... APL Materials 8 (5), 2020 | 28 | 2020 |
| Combinatorial material science and strain engineering enabled by pulsed laser deposition using radially segmented targets M Kneiß, P Storm, G Benndorf, M Grundmann, H von Wenckstern ACS Combinatorial Science 20 (11), 643-652, 2018 | 28 | 2018 |
| Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropy M Kneiß, D Splith, P Schlupp, A Hassa, H Von Wenckstern, M Lorenz, ... Journal of Applied Physics 130 (8), 2021 | 27 | 2021 |
| Modeling the electrical transport in epitaxial undoped and Ni-, Cr-, and W-doped TiO2 anatase thin films M Kneiß, M Jenderka, K Brachwitz, M Lorenz, M Grundmann Applied Physics Letters 105 (6), 2014 | 26 | 2014 |
| Structural and Elastic Properties of α(AlxGa1−x)2O3 Thin Films on (11.0) Al2O3 Substrates for the Entire Composition Range A Hassa, P Storm, M Kneiß, D Splith, H von Wenckstern, M Lorenz, ... physica status solidi (b) 258 (2), 2000394, 2021 | 22 | 2021 |
| Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1− x) 2O3 for x= 0.25–0.74 C Fares, M Kneiß, H von Wenckstern, M Grundmann, M Tadjer, F Ren, ... APL materials 7 (7), 2019 | 21 | 2019 |
| Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x) 2O3 for x= 0.2-0.65 C Fares, M Kneiß, H von Wenckstern, M Tadjer, F Ren, E Lambers, ... ECS Journal of Solid State Science and Technology 8 (6), P351, 2019 | 17 | 2019 |
| Band Offsets at κ-([Al,In]xGa1–x)2O3/MgO Interfaces T Schultz, M Kneiss, P Storm, D Splith, H von Wenckstern, M Grundmann, ... ACS Applied Materials & Interfaces 12 (7), 8879-8885, 2020 | 16 | 2020 |
