| The dependence of retention time on gate length in UTBOX FBRAM with different source/drain junction engineering T Nicoletti, M Aoulaiche, LM Almeida, SD Santos, JA Martino, A Veloso, ... IEEE electron device letters 33 (7), 940-942, 2012 | 42 | 2012 |
| Junction field effect on the retention time for one-transistor floating-body RAM M Aoulaiche, T Nicoletti, LM Almeida, E Simoen, A Veloso, P Blomme, ... IEEE transactions on electron devices 59 (8), 2167-2172, 2012 | 37 | 2012 |
| Dependence of generation–recombination noise with gate voltage in FD SOI MOSFETs AL Rodriguez, JAJ Tejada, S Rodriguez-Bolivar, LM Almeida, ... IEEE transactions on electron devices 59 (10), 2780-2786, 2012 | 28 | 2012 |
| Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM LM Almeida, KRA Sasaki, C Caillat, M Aoulaiche, N Collaert, M Jurczak, ... Solid-state electronics 90, 149-154, 2013 | 25 | 2013 |
| The impact of gate length scaling on UTBOX FDSOI devices: The digital/analog performance of extension-less structures T Nicoletti, S Santos, L Almeida, JA Martino, M Aoulaiche, A Veloso, ... 2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012 | 21 | 2012 |
| Back gate bias influence on SOI Ω-gate nanowire down to 10 nm width LM Almeida, PGD Agopian, JA Martino, S Barraud, M Vinet, O Faynot 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2016 | 16 | 2016 |
| Temperature influence on UTBOX 1T-DRAM using GIDL for writing operation KRA Sasaki, LM Almeida, JA Martino, M Aoulaiche, E Simoen, C Claeys 2012 8th International Caribbean Conference on Devices, Circuits and Systems …, 2012 | 15 | 2012 |
| Zero temperature coefficient behavior for advanced MOSFETs J Martino, V Mesquita, C Macambira, V Itocazu, L Almeida, P Agopian, ... 2016 13th IEEE International Conference on Solid-State and Integrated …, 2016 | 14 | 2016 |
| Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications KRA Sasaki, T Nicoletti, LM Almeida, SD dos Santos, A Nissimoff, ... Solid-state electronics 97, 30-37, 2014 | 13 | 2014 |
| Zero-Temperature-Coefficient of planar and MuGFET SOI devices JA Martino, LM Camillo, LM Almeida, E Simoen, C Claeys 2010 10th IEEE International Conference on Solid-State and Integrated …, 2010 | 12 | 2010 |
| One transistor floating body RAM performances on UTBOX devices using the BJT effect LM Almeida, KRA Sasaki, M Aoulaiche, E Simoen, C Clayes, JA Martino Journal of Integrated Circuits and Systems 7 (2), 113-120, 2012 | 10 | 2012 |
| Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices LM Almeida, M Aoulaiche, KRA Sasaki, T Nicoletti, MGC de Andrade, ... 2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012 | 9 | 2012 |
| Analysis of UTBOX 1T-DRAM Memory Cell at High Temperatures LM Almeida, KR Sasaki, M Aoulaiche, E Simoen, C Claeys, JA Martino ECS Transactions 39 (1), 61, 2011 | 9 | 2011 |
| Improved analytical model for ZTC bias point for strained tri-gates FinFETs LM Almeida, JA Martino, E Simoen, C Claeys ECS transactions 31 (1), 385, 2010 | 9 | 2010 |
| Defect analysis in UTBOX SOI nMOSFETs by low-frequency noise A Luque Rodriguez, G Cano de Andrade, M Aoulaiche, ... 8th European Workshop on Silicon-on-Insulator Technology, Devices and …, 2012 | 8 | 2012 |
| On the Variability of the Low-Frequency Noise in UTBOX SOI nMOS-FETs E Simoen, MGC Andrade, LM Almeida, M Aoulaiche, C Caillat, M Jurczak, ... Journal of Integrated Circuits and Systems 8 (2), 71-77, 2013 | 7 | 2013 |
| On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs E Simoen, M Aoulaiche, A Veloso, M Jurczak, C Claeys, JAJ Tejada, ... 2012 Proceedings of the European Solid-State Device Research Conference …, 2012 | 7 | 2012 |
| The dependence of sense margin and retention time on front and back gate bias in UTBOX FBRAM LM Almeida, KRA Sasaki, M Aoulaiche, N Collaert, E Simoen, C Claeys, ... 8th European Workshop on Silicon-on-Insulator Technology, Devices and …, 2012 | 7 | 2012 |
| Ground plane influence on zero-temperature-coefficient in SOI UTBB MOSFETs with different silicon film thicknesses CN Macambira, VT Itocazu, LM Almeida, JA Martino, E Simoen, C Claeys 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2016 | 5 | 2016 |
| Marketing innovation autonomy for subsidiaries in new products development: a case study in fixed telecom VEI Yamasaki, MLF MacLennan, LM Almeida International Journal of Logistics Systems and Management 17 (3), 275-288, 2014 | 5 | 2014 |
C. ClaeysProfessor KU LeuvenBestätigte E-Mail-Adresse bei kuleuven.be
