| Radio Frequency Transistors and Circuits Based on CVD MoS2 A Sanne, R Ghosh, A Rai, MN Yogeesh, SH Shin, A Sharma, K Jarvis, ... Nano letters 15 (8), 5039-5045, 2015 | 194 | 2015 |
| Extremely high-frequency flexible graphene thin-film transistors S Park, SH Shin, MN Yogeesh, AL Lee, S Rahimi, D Akinwande IEEE Electron Device Letters 37 (4), 512-515, 2016 | 66 | 2016 |
| Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications TW Kim, DH Kim, DH Koh, HM Kwon, RH Baek, D Veksler, C Huffman, ... 2013 IEEE International Electron Devices Meeting, 16.3. 1-16.3. 4, 2013 | 43 | 2013 |
| High-performance III–V devices for future logic applications DH Kim, TW Kim, RH Baek, PD Kirsch, W Maszara, JA Del Alamo, ... 2014 IEEE International Electron Devices Meeting, 25.2. 1-25.2. 4, 2014 | 29 | 2014 |
| Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack TW Kim, HM Kwon, SH Shin, CS Shin, WK Park, E Chiu, M Rivera, JI Lew, ... IEEE Electron Device Letters 36 (7), 672-674, 2015 | 24 | 2015 |
| A New Unified Mobility Extraction Technique of In0.7Ga0.3As QW MOSFETs JH Park, DK Kim, SW Son, SH Shin, TW Kim, JH Lee, DH Kim IEEE Electron Device Letters 37 (9), 1096-1099, 2016 | 16 | 2016 |
| Metal-semiconductor–metal varactors based on InAlN/GaN heterostructure with cutoff frequency of 308 GHz DM Geum, SH Shin, SM Hong, JH Jang IEEE Electron Device Letters 36 (4), 306-308, 2015 | 15 | 2015 |
| Buried-Pt gate InP/In0. 52Al0. 48As/In0. 7Ga0. 3As pseudomorphic HEMTs SH Shin, TW Kim, JI Song, JH Jang Solid-state electronics 62 (1), 106-109, 2011 | 14 | 2011 |
| MSM Varactor Diodes Based on HEMTs With Cut-Off Frequency of 908 GHz SH Shin, DM Geum, JH Jang IEEE Electron Device Letters 35 (2), 172-174, 2013 | 13 | 2013 |
| 75 nm T‐shaped gate for In0.17Al0.83N/GaN HEMTs with minimal short‐channel effect DM Geum, SH Shin, MS Kim, JH Jang Electronics letters 49 (24), 1536-1537, 2013 | 12 | 2013 |
| Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s CS Shin, WK Park, SH Shin, YD Cho, DH Ko, TW Kim, DH Koh, HM Kwon, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 11 | 2014 |
| A two-step-recess process based on atomic-layer etching for high-performance In0. 52Al0. 48As/In0. 53Ga0. 47As p-HEMTs TW Kim, DH Kim, SD Park, SH Shin, SJ Jo, HJ Song, YM Park, JO Bae, ... IEEE transactions on electron devices 55 (7), 1577, 2008 | 11 | 2008 |
| Record Effective Mobility Obtained From In0.53Ga0.47As/In0.52Al0.48As Quantum-Well MOSFETs on 300-mm Si Substrate SW Son, JH Park, JM Baek, DK Kim, SR Lee, SM Lee, J Yoon, J Kim, ... IEEE Electron Device Letters 38 (6), 724-727, 2017 | 9 | 2017 |
| High‐frequency characteristics of Lg = 60 nm InGaAs MOS high‐electron‐mobility‐transistor (MOS‐HEMT) with Al2O3 gate insulator TW Kim, JS Kim, DK Kim, SH Shin, WS Park, S Banerjee, DH Kim Electronics Letters 52 (10), 870-872, 2016 | 8 | 2016 |
| Detection of current induced spin polarization in epitaxial Bi2Te3 thin film R Dey, A Roy, T Pramanik, A Rai, S Heon Shin, S Majumder, LF Register, ... Applied Physics Letters 110 (12), 2017 | 6 | 2017 |
| Damage free Ar ion plasma surface treatment on In0. 53Ga0. 47As-on-silicon metal-oxide-semiconductor device D Koh, SH Shin, J Ahn, S Sonde, HM Kwon, T Orzali, DH Kim, TW Kim, ... Applied Physics Letters 107 (18), 2015 | 6 | 2015 |
| Performance and carrier transport analysis of In0. 7Ga0. 3As quantum-well MOSFETs with Al2O3/HfO2 gate stack SW Son, JH Park, JM Baek, JS Kim, DK Kim, SH Shin, SK Banerjee, ... Solid-State Electronics 123, 63-67, 2016 | 5 | 2016 |
| In0. 7Ga0. 3As quantum well MOSFETs with Al2O3/HfO2 toward subthreshold swing of∼ 60 mV/dec TW Kim, D Koh, H Kwon, CS Shin, WK Park, SH Shin, Y Cho, DH Ko, ... Applied Physics Express 7 (7), 074201, 2014 | 5 | 2014 |
| Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate SH Shin, JP Shim, H Jang, JH Jang Micromachines 14 (1), 56, 2022 | 4 | 2022 |
| Highly Selective and Low Damage Etching of GaAs/AlGaAs Heterostructure using Cl2/O2 Neutral Beam BJ Park, JK Yeon, WS Lim, SK Kang, JW Bae, GY Yeom, MS Jhon, ... Plasma Chemistry and Plasma Processing 30, 633-640, 2010 | 4 | 2010 |
Tae-Woo KimUniversity of UlsanVerified email at ulsan.ac.kr
