Seung Heon Shin
Seung Heon Shin
Korea Polytechnics
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Radio Frequency Transistors and Circuits Based on CVD MoS2
A Sanne, R Ghosh, A Rai, MN Yogeesh, SH Shin, A Sharma, K Jarvis, ...
Nano letters 15 (8), 5039-5045, 2015
Extremely high-frequency flexible graphene thin-film transistors
S Park, SH Shin, MN Yogeesh, AL Lee, S Rahimi, D Akinwande
IEEE Electron Device Letters 37 (4), 512-515, 2016
Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications
TW Kim, DH Kim, DH Koh, HM Kwon, RH Baek, D Veksler, C Huffman, ...
2013 IEEE International Electron Devices Meeting, 16.3. 1-16.3. 4, 2013
High-performance III–V devices for future logic applications
DH Kim, TW Kim, RH Baek, PD Kirsch, W Maszara, JA Del Alamo, ...
2014 IEEE International Electron Devices Meeting, 25.2. 1-25.2. 4, 2014
Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack
TW Kim, HM Kwon, SH Shin, CS Shin, WK Park, E Chiu, M Rivera, JI Lew, ...
IEEE Electron Device Letters 36 (7), 672-674, 2015
Buried-Pt gate InP/In0. 52Al0. 48As/In0. 7Ga0. 3As pseudomorphic HEMTs
SH Shin, TW Kim, JI Song, JH Jang
Solid-state electronics 62 (1), 106-109, 2011
A New Unified Mobility Extraction Technique of In0.7Ga0.3As QW MOSFETs
JH Park, DK Kim, SW Son, SH Shin, TW Kim, JH Lee, DH Kim
IEEE Electron Device Letters 37 (9), 1096-1099, 2016
Metal-semiconductor–metal varactors based on InAlN/GaN heterostructure with cutoff frequency of 308 GHz
DM Geum, SH Shin, SM Hong, JH Jang
IEEE Electron Device Letters 36 (4), 306-308, 2015
Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s
CS Shin, WK Park, SH Shin, YD Cho, DH Ko, TW Kim, DH Koh, HM Kwon, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technicalá…, 2014
MSM Varactor Diodes Based on HEMTs With Cut-Off Frequency of 908 GHz
SH Shin, DM Geum, JH Jang
IEEE Electron Device Letters 35 (2), 172-174, 2013
75ánm T‐shaped gate for In0.17Al0.83N/GaN HEMTs with minimal short‐channel effect
DM Geum, SH Shin, MS Kim, JH Jang
Electronics letters 49 (24), 1536-1537, 2013
A two-step-recess process based on atomic-layer etching for high-performance In0. 52Al0. 48As/In0. 53Ga0. 47As p-HEMTs
TW Kim, DH Kim, SD Park, SH Shin, SJ Jo, HJ Song, YM Park, JO Bae, ...
IEEE transactions on electron devices 55 (7), 1577, 2008
Record Effective Mobility Obtained From In0.53Ga0.47As/In0.52Al0.48As Quantum-Well MOSFETs on 300-mm Si Substrate
SW Son, JH Park, JM Baek, DK Kim, SR Lee, SM Lee, J Yoon, J Kim, ...
IEEE Electron Device Letters 38 (6), 724-727, 2017
High‐frequency characteristics of Lg = 60ánm InGaAs MOS high‐electron‐mobility‐transistor (MOS‐HEMT) with Al2O3 gate insulator
TW Kim, JS Kim, DK Kim, SH Shin, WS Park, S Banerjee, DH Kim
Electronics Letters 52 (10), 870-872, 2016
Damage free Ar ion plasma surface treatment on In0. 53Ga0. 47As-on-silicon metal-oxide-semiconductor device
D Koh, SH Shin, J Ahn, S Sonde, HM Kwon, T Orzali, DH Kim, TW Kim, ...
Applied Physics Letters 107 (18), 2015
Detection of current induced spin polarization in epitaxial Bi2Te3 thin film
R Dey, A Roy, T Pramanik, A Rai, S Heon Shin, S Majumder, LF Register, ...
Applied Physics Letters 110 (12), 2017
Performance and carrier transport analysis of In0. 7Ga0. 3As quantum-well MOSFETs with Al2O3/HfO2 gate stack
SW Son, JH Park, JM Baek, JS Kim, DK Kim, SH Shin, SK Banerjee, ...
Solid-State Electronics 123, 63-67, 2016
In0. 7Ga0. 3As quantum well MOSFETs with Al2O3/HfO2 toward subthreshold swing of∼ 60 mV/dec
TW Kim, D Koh, H Kwon, CS Shin, WK Park, SH Shin, Y Cho, DH Ko, ...
Applied Physics Express 7 (7), 074201, 2014
Highly Selective and Low Damage Etching of GaAs/AlGaAs Heterostructure using Cl2/O2 Neutral Beam
BJ Park, JK Yeon, WS Lim, SK Kang, JW Bae, GY Yeom, MS Jhon, ...
Plasma Chemistry and Plasma Processing 30, 633-640, 2010
Characteristics of 0.2 Ám depletion and quasi-enhancement mode self-aligned gate capless p-HEMTs
TW Kim, DH Kim, SH Shin, SJ Jo, JH Jang, JI Song
Electronics Letters 42 (20), 1178-1180, 2006
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