| Vertical GaN junction barrier Schottky rectifiers by selective ion implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ... IEEE Electron Device Letters 38 (8), 1097-1100, 2017 | 134 | 2017 |
| Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process A Nath, AD Koehler, GG Jernigan, VD Wheeler, JK Hite, SC Hernández, ... Applied Physics Letters 104 (22), 224102, 2014 | 40 | 2014 |
| Microwave annealing of very high dose aluminum-implanted 4H-SiC R Nipoti, A Nath, MV Rao, A Hallén, A Carnera, YL Tian Applied Physics Express 4 (11), 111301, 2011 | 39 | 2011 |
| Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene KM Daniels, MM Jadidi, AB Sushkov, A Nath, AK Boyd, K Sridhara, ... 2D Materials 4 (2), 025034, 2017 | 36 | 2017 |
| Vertical GaN junction barrier Schottky diodes AD Koehler, TJ Anderson, MJ Tadjer, A Nath, BN Feigelson, DI Shahin, ... ECS Journal of Solid State Science and Technology 6 (1), Q10, 2016 | 33 | 2016 |
| Ultra-broadband photodetectors based on epitaxial graphene quantum dots A El Fatimy, A Nath, BD Kong, AK Boyd, RL Myers-Ward, KM Daniels, ... Nanophotonics 7 (4), 735-740, 2018 | 29 | 2018 |
| Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes A Nath, MV Rao, F Moscatelli, M Puzzanghera, F Mancarella, R Nipoti 2014 20th International Conference on Ion Implantation Technology (IIT), 1-4, 2014 | 27 | 2014 |
| Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC A Parisini, M Gorni, A Nath, L Belsito, MV Rao, R Nipoti Journal of Applied Physics 118 (3), 035101, 2015 | 26 | 2015 |
| Plasma-based chemical modification of epitaxial graphene with oxygen functionalities SC Hernández, VD Wheeler, MS Osofsky, GG Jernigan, VK Nagareddy, ... Surface and Coatings Technology 241, 8-12, 2014 | 26 | 2014 |
| High-dose phosphorus-implanted 4H-SiC: Microwave and conventional post-implantation annealing at temperatures≥ 1700° C R Nipoti, A Nath, SB Qadri, YL Tian, C Albonetti, A Carnera, MV Rao Journal of electronic materials 41, 457-465, 2012 | 23 | 2012 |
| Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN CR English, VD Wheeler, NY Garces, N Nepal, A Nath, JK Hite, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014 | 22 | 2014 |
| Functionalized graphene as a model system for the two-dimensional metal-insulator transition MS Osofsky, SC Hernández, A Nath, VD Wheeler, SG Walton, CM Krowne, ... Scientific Reports 6 (1), 19939, 2016 | 21 | 2016 |
| Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering VR Anderson, N Nepal, SD Johnson, ZR Robinson, A Nath, AC Kozen, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 (3 …, 2017 | 20 | 2017 |
| Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates TJ Anderson, AD Koehler, MJ Tadjer, JK Hite, A Nath, NA Mahadik, ... Applied Physics Express 10 (12), 126501, 2017 | 17 | 2017 |
| Electrothermal evaluation of AlGaN/GaN membrane high electron mobility transistors by transient thermoreflectance MJ Tadjer, PE Raad, PL Komarov, KD Hobart, TI Feygelson, AD Koehler, ... IEEE Journal of the Electron Devices Society 6, 922-930, 2018 | 15 | 2018 |
| In search of quantum-limited contact resistance: understanding the intrinsic and extrinsic effects on the graphene–metal interface A Nath, M Currie, AK Boyd, VD Wheeler, AD Koehler, MJ Tadjer, ... 2D Materials 3 (2), 025013, 2016 | 15 | 2016 |
| Challenges to graphene growth on SiC (0 0 0 1‾): Substrate effects, hydrogen etching and growth ambient ZR Robinson, GG Jernigan, M Currie, JK Hite, KM Bussmann, LO Nyakiti, ... Carbon 81, 73-82, 2015 | 15 | 2015 |
| Effect of surface passivation and substrate on proton irradiated AlGaN/GaN HEMT transport properties JC Gallagher, TJ Anderson, AD Koehler, NA Mahadik, A Nath, BD Weaver, ... ECS Journal of Solid State Science and Technology 6 (11), S3060, 2017 | 13 | 2017 |
| Electrochemically prepared polycrystalline copper surface for the growth of hexagonal boron nitride K Sridhara, BN Feigelson, JA Wollmershauser, JK Hite, A Nath, ... Crystal Growth & Design 17 (4), 1669-1678, 2017 | 12 | 2017 |
| Sub-micron laser patterning of graphene and 2D materials M Currie, DK Gaskill, A Nath US Patent 9,629,251, 2017 | 10 | 2017 |
Mulpuri V RaoGeorge Mason UniversityBestätigte E-Mail-Adresse bei gmu.edu
