Folgen
Anindya Nath
Anindya Nath
IBM Research, Globalfoundries, US Naval Research Lab
Bestätigte E-Mail-Adresse bei gmu.edu
Titel
Zitiert von
Zitiert von
Jahr
Vertical GaN junction barrier Schottky rectifiers by selective ion implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
1622017
Ultra-broadband photodetectors based on epitaxial graphene quantum dots
A El Fatimy, A Nath, BD Kong, AK Boyd, RL Myers-Ward, KM Daniels, ...
Nanophotonics 7 (4), 735-740, 2018
422018
Vertical GaN junction barrier Schottky diodes
AD Koehler, TJ Anderson, MJ Tadjer, A Nath, BN Feigelson, DI Shahin, ...
ECS Journal of Solid State Science and Technology 6 (1), Q10, 2016
422016
Microwave annealing of very high dose aluminum-implanted 4H-SiC
R Nipoti, A Nath, MV Rao, A Hallén, A Carnera, YL Tian
Applied Physics Express 4 (11), 111301, 2011
422011
Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene
KM Daniels, MM Jadidi, AB Sushkov, A Nath, AK Boyd, K Sridhara, ...
2D Materials 4 (2), 025034, 2017
402017
Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process
A Nath, AD Koehler, GG Jernigan, VD Wheeler, JK Hite, SC Hernández, ...
Applied Physics Letters 104 (22), 2014
402014
Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes
A Nath, MV Rao, F Moscatelli, M Puzzanghera, F Mancarella, R Nipoti
2014 20th International Conference on Ion Implantation Technology (IIT), 1-4, 2014
342014
Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN
CR English, VD Wheeler, NY Garces, N Nepal, A Nath, JK Hite, ...
Journal of Vacuum Science & Technology B 32 (3), 2014
302014
Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC
A Parisini, M Gorni, A Nath, L Belsito, MV Rao, R Nipoti
Journal of Applied Physics 118 (3), 2015
292015
Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates
TJ Anderson, AD Koehler, MJ Tadjer, JK Hite, A Nath, NA Mahadik, ...
Applied Physics Express 10 (12), 126501, 2017
282017
Plasma-based chemical modification of epitaxial graphene with oxygen functionalities
SC Hernández, VD Wheeler, MS Osofsky, GG Jernigan, VK Nagareddy, ...
Surface and Coatings Technology 241, 8-12, 2014
282014
Functionalized graphene as a model system for the two-dimensional metal-insulator transition
MS Osofsky, SC Hernandez, A Nath, VD Wheeler, SG Walton, CM Krowne, ...
Scientific Reports 6 (1), 19939, 2016
252016
High-dose phosphorus-implanted 4H-SiC: Microwave and conventional post-implantation annealing at temperatures≥ 1700° C
R Nipoti, A Nath, SB Qadri, YL Tian, C Albonetti, A Carnera, MV Rao
Journal of electronic materials 41, 457-465, 2012
232012
Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
VR Anderson, N Nepal, SD Johnson, ZR Robinson, A Nath, AC Kozen, ...
Journal of Vacuum Science & Technology A 35 (3), 2017
222017
Electrothermal evaluation of AlGaN/GaN membrane high electron mobility transistors by transient thermoreflectance
MJ Tadjer, PE Raad, PL Komarov, KD Hobart, TI Feygelson, AD Koehler, ...
IEEE Journal of the Electron Devices Society 6, 922-930, 2018
202018
In search of quantum-limited contact resistance: understanding the intrinsic and extrinsic effects on the graphene–metal interface
A Nath, M Currie, AK Boyd, VD Wheeler, AD Koehler, MJ Tadjer, ...
2D Materials 3 (2), 025013, 2016
182016
High voltage GaN lateral photoconductive semiconductor switches
AD Koehler, TJ Anderson, A Khachatrian, A Nath, MJ Tadjer, SP Buchner, ...
ECS Journal of Solid State Science and Technology 6 (11), S3099, 2017
162017
Effect of surface passivation and substrate on proton irradiated AlGaN/GaN HEMT transport properties
JC Gallagher, TJ Anderson, AD Koehler, NA Mahadik, A Nath, BD Weaver, ...
ECS Journal of Solid State Science and Technology 6 (11), S3060, 2017
162017
Challenges to graphene growth on SiC (0 0 0 1‾): Substrate effects, hydrogen etching and growth ambient
ZR Robinson, GG Jernigan, M Currie, JK Hite, KM Bussmann, LO Nyakiti, ...
Carbon 81, 73-82, 2015
162015
Electrochemically prepared polycrystalline copper surface for the growth of hexagonal boron nitride
K Sridhara, BN Feigelson, JA Wollmershauser, JK Hite, A Nath, ...
Crystal Growth & Design 17 (4), 1669-1678, 2017
132017
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20