| Ultra-fast and high-reliability SOT-MRAM: From cache replacement to normally-off computing G Prenat, K Jabeur, P Vanhauwaert, G Di Pendina, F Oboril, R Bishnoi, ... IEEE Transactions on Multi-Scale Computing Systems 2 (1), 49-60, 2015 | 191 | 2015 |
| Spin Orbit Torque Non-Volatile Flip-Flop for High Speed and Low Energy Applications K Jabeur, G Di Pendina, F Bernard-Granger, G Prenat IEEE Electron Device Letter, 2014 | 105 | 2014 |
| Beyond STT-MRAM, spin orbit torque RAM SOT-MRAM for high speed and high reliability applications G Prenat, K Jabeur, G Di Pendina, O Boulle, G Gaudin Spintronics-based Computing, 145-157, 2015 | 70 | 2015 |
| NON-VOLATILE MEMORY CELL G DI PENDINA, G PRENAT WO Patent 2014/170593 A1, 2013 | 45 | 2013 |
| Compact modeling of a magnetic tunnel junction based on spin orbit torque K Jabeur, G Di Pendina, G Prenat, LD Buda-Prejbeanu, B Dieny IEEE transactions on magnetics 50 (7), 1-8, 2014 | 41 | 2014 |
| Study of two writing schemes for a magnetic tunnel junction based on spin orbit torque K Jabeur, LD Buda-Prejbeanu, G Prenat, G Di Pendina International Journal of Electronics Science and Engineering, 501-507, 2013 | 30 | 2013 |
| Comparison of Verilog‐A compact modelling strategies for spintronic devices K Jabeur, F Bernard‐Granger, G Di Pendina, G Prenat, B Dieny Electronics letters 50 (19), 1353-1355, 2014 | 28 | 2014 |
| Non-volatile FPGAs based on spintronic devices O Goncalves, G Prenat, G Di Pendina, B Dieny Proceedings of the 50th Annual Design Automation Conference, 1-3, 2013 | 23 | 2013 |
| Compact model of a three-terminal MRAM device based on spin orbit torque switching K Jabeur, G Prenat, G Di Pendina, LD Buda-Prejbeanu, IL Prejbeanu, ... 2013 International Semiconductor Conference Dresden-Grenoble (ISCDG), 1-4, 2013 | 20 | 2013 |
| Spintronics-based computing G Prenat, K Jabeur, G Di Pendina, O Boulle, G Gaudin, W Zhao Spin orbit torque RAM SOT-MRAM for high speed and high reliability …, 2015 | 18 | 2015 |
| Ultra‐energy‐efficient CMOS/magnetic non‐volatile flip‐flop based on spin‐orbit torque device K Jabeur, G Di Pendina, G Prenat Electronics Letters 50 (8), 585-587, 2014 | 18 | 2014 |
| Design and evaluation of a 28-nm FD-SOI STT-MRAM for ultra-low power microcontrollers G Patrigeon, P Benoit, L Torres, S Senni, G Prenat, G Di Pendina IEEE Access 7, 58085-58093, 2019 | 16 | 2019 |
| Radiative effects on MRAM-based non-volatile elementary structures J Lopes, G Di Pendina, E Zianbetov, E Beigne, L Torres 2015 IEEE Computer Society Annual Symposium on VLSI, 321-326, 2015 | 16 | 2015 |
| Non-volatility for ultra-low power asynchronous circuits in hybrid cmos/magnetic technology E Zianbetov, E Beigné, G Di Pendina 2015 21st IEEE International Symposium on Asynchronous Circuits and Systems …, 2015 | 14 | 2015 |
| Study of spin transfer torque (STT) and spin orbit torque (SOT) magnetic tunnel junctions (MTJS) at advanced CMOS technology nodes K Jabeur, G Pendina, G Prenat Electr. Electron. Eng. Int. J 6, 01-09, 2017 | 13 | 2017 |
| A multifunctional standardized magnetic tunnel junction stack embedding sensor, memory and oscillator functionality A Chavent, V Iurchuk, L Tillie, Y Bel, N Lamard, L Vila, U Ebels, RC Sousa, ... Journal of Magnetism and Magnetic Materials 505, 166647, 2020 | 12 | 2020 |
| A hybrid magnetic/complementary metal oxide semiconductor process design kit for the design of low-power non-volatile logic circuits G Di Pendina, G Prenat, B Dieny, K Torki Journal of Applied Physics 111 (7), 2012 | 12 | 2012 |
| Non-volatile memory device G Di Pendina, V Javerliac US Patent 9,311,994, 2016 | 10 | 2016 |
| Loadless volatile/non-volatile memory cell G Prenat, G Di Pendina, K Torki US Patent App. 13/980,555, 2014 | 10 | 2014 |
| C-element with non-volatile back-up G Di Pendina, E Beigne, E Zianbetov US Patent 9,412,448, 2016 | 9 | 2016 |
