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Robert L Bruce
Robert L Bruce
Research Staff Member, IBM Research
Verified email at us.ibm.com - Homepage
Title
Cited by
Cited by
Year
Nanoscale lateral displacement arrays for the separation of exosomes and colloids down to 20 nm
BH Wunsch, JT Smith, SM Gifford, C Wang, M Brink, RL Bruce, RH Austin, ...
Nature nanotechnology 11 (11), 936-940, 2016
5212016
Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
D Metzler, RL Bruce, S Engelmann, EA Joseph, GS Oehrlein
Journal of Vacuum Science & Technology A 32 (2), 2014
2022014
Relationship between nanoscale roughness and ion-damaged layer in argon plasma exposed polystyrene films
RL Bruce, F Weilnboeck, T Lin, RJ Phaneuf, GS Oehrlein, BK Long, ...
Journal of Applied Physics 107 (8), 2010
1232010
Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond
S Bangsaruntip, K Balakrishnan, SL Cheng, J Chang, M Brink, I Lauer, ...
2013 IEEE international electron devices meeting, 20.2. 1-20.2. 4, 2013
1182013
Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
D Metzler, C Li, S Engelmann, RL Bruce, EA Joseph, GS Oehrlein
Journal of Vacuum Science & Technology A 34 (1), 2016
1072016
Fabrication of sub-20 nm nanopore arrays in membranes with embedded metal electrodes at wafer scales
J Bai, D Wang, S Nam, H Peng, R Bruce, L Gignac, M Brink, E Kratschmer, ...
Nanoscale 6 (15), 8900-8906, 2014
842014
Application of the protection/deprotection strategy to the science of porous materials
T Frot, W Volksen, S Purushothaman, R Bruce, G Dubois
Advanced Materials 25 (23), 2828-2832, 2011
842011
ALD-based confined PCM with a metallic liner toward unlimited endurance
W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016
832016
Plasma-surface interactions of model polymers for advanced photoresists using C4F8∕ Ar discharges and energetic ion beams
S Engelmann, RL Bruce, T Kwon, R Phaneuf, GS Oehrlein, YC Bae, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
792007
Synergistic effects of vacuum ultraviolet radiation, ion bombardment, and heating in 193nm photoresist roughening and degradation
D Nest, DB Graves, S Engelmann, RL Bruce, F Weilnboeck, GS Oehrlein, ...
Applied Physics Letters 92 (15), 2008
782008
Study of ion and vacuum ultraviolet-induced effects on styrene-and ester-based polymers exposed to argon plasma
RL Bruce, S Engelmann, T Lin, T Kwon, RJ Phaneuf, GS Oehrlein, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
742009
Understanding the roughening and degradation of 193 nm photoresist during plasma processing: synergistic roles of vacuum ultraviolet radiation and ion bombardment
D Nest, TY Chung, DB Graves, S Engelmann, RL Bruce, F Weilnboeck, ...
Plasma processes and polymers 6 (10), 649-657, 2009
702009
Brush seal device
H Inoue
US Patent 6,601,853, 2003
70*2003
Near-surface modification of polystyrene by Ar+: Molecular dynamics simulations and experimental validation
JJ Vegh, D Nest, DB Graves, R Bruce, S Engelmann, T Kwon, RJ Phaneuf, ...
Applied Physics Letters 91 (23), 2007
662007
Post porosity plasma protection: Scaling of efficiency with porosity
T Frot, W Volksen, S Purushothaman, RL Bruce, T Magbitang, DC Miller, ...
Advanced Functional Materials 22 (14), 3043-3050, 2012
592012
Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry
F Weilnboeck, RL Bruce, S Engelmann, GS Oehrlein, D Nest, TY Chung, ...
Journal of Vacuum Science & Technology B 28 (5), 993-1004, 2010
582010
Challenges of tailoring surface chemistry and plasma/surface interactions to advance atomic layer etching
SU Engelmann, RL Bruce, M Nakamura, D Metzler, SG Walton, ...
ECS Journal of Solid State Science and Technology 4 (6), N5054, 2015
572015
Confined PCM-based analog synaptic devices offering low resistance-drift and 1000 programmable states for deep learning
W Kim, RL Bruce, T Masuda, GW Fraczak, N Gong, P Adusumilli, ...
2019 Symposium on VLSI Technology, T66-T67, 2019
552019
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
HY Cheng, WC Chien, IT Kuo, EK Lai, Y Zhu, JL Jordan-Sweet, A Ray, ...
2017 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2017
542017
Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors
KY Lin, C Li, S Engelmann, RL Bruce, EA Joseph, D Metzler, GS Oehrlein
Journal of Vacuum Science & Technology A 36 (4), 2018
522018
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