Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors L Dobaczewski, AR Peaker, K Bonde Nielsen
Journal of applied physics 96 (9), 4689-4728, 2004
370 2004 Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ...
CRC press, 2018
297 2018 Laplace transform deep‐level transient spectroscopic studies of defects in semiconductors L Dobaczewski, P Kaczor, ID Hawkins, AR Peaker
Journal of applied physics 76 (1), 194-198, 1994
286 1994 Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device AM Song, M Missous, P Omling, AR Peaker, L Samuelson, W Seifert
Applied Physics Letters 83 (9), 1881-1883, 2003
262 2003 Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi VP Markevich, ID Hawkins, AR Peaker, KV Emtsev, VV Emtsev, ...
Physical Review B 70 (23), 235213, 2004
146 2004 Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors AR Peaker, VP Markevich, J Coutinho
Journal of Applied Physics 123 (16), 2018
115 2018 Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald
physica status solidi (RRL)–Rapid Research Letters 10 (6), 443-447, 2016
107 2016 Detection of minority-carrier traps using transient spectroscopy R Brunwin, B Hamilton, P Jordan, AR Peaker
Electronics letters 12 (15), 349-350, 1979
106 1979 Deep‐state‐controlled minority‐carrier lifetime in n ‐type gallium phosphide B Hamilton, AR Peaker, DR Wight
Journal of Applied Physics 50 (10), 6373-6385, 1979
98 1979 Recombination processes in erbium-doped MBE silicon H Efeoglu, JH Evans, TE Jackman, B Hamilton, DC Houghton, JM Langer, ...
Semiconductor science and technology 8 (2), 236, 1993
96 1993 Defect reactions associated with divacancy elimination in silicon VP Markevich, AR Peaker, SB Lastovskii, LI Murin, JL Lindström
Journal of Physics: Condensed Matter 15 (39), S2779, 2003
92 2003 Electronic properties of antimony-vacancy complex in Ge crystals VP Markevich, AR Peaker, VV Litvinov, VV Emtsev, LI Murin
Journal of Applied Physics 95 (8), 4078-4083, 2004
91 2004 Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs I Poole, KE Singer, AR Peaker, AC Wright
Journal of crystal growth 121 (1-2), 121-131, 1992
91 1992 Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald, ...
physica status solidi (a) 213 (11), 2844-2849, 2016
86 2016 Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling VP Markevich, AR Peaker, SB Lastovskii, LI Murin, J Coutinho, VJB Torres, ...
Physical Review B 80 (23), 235207, 2009
85 2009 Capture cross sections of the gold donor and acceptor states in n-type Czochralski silicon RH Wu, AR Peaker
Solid-State Electronics 25 (7), 643-649, 1982
85 1982 Evidence for substitutional-interstitial defect motion leading to DX behavior by donors in L Dobaczewski, P Kaczor, M Missous, AR Peaker, Z Żytkiewicz
Physical review letters 68 (16), 2508, 1992
84 1992 Electronic properties of vacancy–oxygen complex in Ge crystals VP Markevich, ID Hawkins, AR Peaker, VV Litvinov, LI Murin, ...
Applied Physics Letters 81 (10), 1821-1823, 2002
76 2002 Coexistence of deep levels with optically active InAs quantum dots SW Lin, C Balocco, M Missous, AR Peaker, AM Song
Physical Review B 72 (16), 165302, 2005
73 2005 Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect CZ Zhao, JF Zhang, MH Chang, AR Peaker, S Hall, G Groeseneken, ...
IEEE Transactions on Electron Devices 55 (7), 1647-1656, 2008
68 2008 
V.P. MarkevichUniversity of ManchesterBestätigte E-Mail-Adresse bei manchester.ac.uk
