Muhammad Jamil
Muhammad Jamil
SUNY, Lehigh University, Georgia Tech, Crystal IS
Verified email at
Cited by
Cited by
Smart environment monitoring system by employing wireless sensor networks on vehicles for pollution free smart cities
MS Jamil, MA Jamil, A Mazhar, A Ikram, A Ahmed, U Munawar
Procedia Engineering 107, 480-484, 2015
Design and Realization of Wide-Band-Gap (2.67 eV) InGaN p-n Junction Solar Cell
BR Jampana, AG Melton, M Jamil, NN Faleev, RL Opila, IT Ferguson, ...
IEEE Electron Device Letters 31 (1), 32-34, 2009
Development of strain reduced GaN on Si (111) by substrate engineering
M Jamil, JR Grandusky, V Jindal, F Shahedipour-Sandvik, S Guha, M Arif
Applied Physics Letters 87 (8), 082103, 2005
Thermopower study of GaN-based materials for next-generation thermoelectric devices and applications
EN Hurwitz, M Asghar, A Melton, B Kucukgok, L Su, M Orocz, M Jamil, ...
Journal of electronic materials 40 (5), 513-517, 2011
An audit of primary post partum haemorrhage
S Bibi, N Danish, A Fawad, M Jamil
Journal of Ayub Medical College Abbottabad 19 (4), 102-106, 2007
Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE
M Jamil, H Zhao, JB Higgins, N Tansu
Journal of Crystal Growth 310 (23), 4947-4953, 2008
Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy
YK Ee, H Zhao, RA Arif, M Jamil, N Tansu
Journal of Crystal Growth 310 (7-9), 2320-2325, 2008
MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode
M Jamil, H Zhao, JB Higgins, N Tansu
physica status solidi (a) 205 (12), 2886-2891, 2008
MOVPE of InN films on GaN templates grown on sapphire and silicon (111) substrates
M Jamil, RA Arif, YK Ee, H Tong, JB Higgins, N Tansu
physica status solidi (a) 205 (7), 1619-1624, 2008
Mechanism of large area dislocation defect reduction in GaN layers on (111) by substrate engineering
M Jamil, JR Grandusky, V Jindal, N Tripathi, F Shahedipour-Sandvik
Journal of Applied Physics 102 (2), 023701, 2007
Pseudomorphic electronic and optoelectronic devices having planar contacts
JR Grandusky, LJ Schowalter, M Jamil, MC Mendrick, SR Gibb
US Patent 9,299,880, 2016
Genome-wide association studies of seven agronomic traits under two sowing conditions in bread wheat
M Jamil, A Ali, A Gul, A Ghafoor, AA Napar, AMH Ibrahim, NH Naveed, ...
BMC plant biology 19 (1), 1-18, 2019
Compositional instability in strained InGaN epitaxial layers induced by kinetic effects
Y Huang, A Melton, B Jampana, M Jamil, JH Ryou, RD Dupuis, ...
Journal of Applied Physics 110 (6), 064908, 2011
THz generation from InN films due to destructive interference between optical rectification and photocurrent surge
G Xu, YJ Ding, H Zhao, G Liu, M Jamil, N Tansu, IB Zotova, CE Stutz, ...
Semiconductor science and technology 25 (1), 015004, 2009
Anticholinergic premedication for prevention of oculocardiac reflex during squint surgery
SM Gilani, M Jamil, F Akbar, R Jehangir
Journal of Ayub Medical College Abbottabad 17 (4), 2005
MOCVD growth of GaN on Si (1 1 1) substrates using an ALD-grown Al2O3 interlayer
WE Fenwick, N Li, T Xu, A Melton, S Wang, H Yu, C Summers, M Jamil, ...
Journal of crystal growth 311 (18), 4306-4310, 2009
Conceptualization of Software Defined Network layers over internet of things for future smart cities applications
MM Mazhar, MA Jamil, A Mazhar, A Ellahi, MS Jamil, T Mahmood
2015 IEEE International Conference on Wireless for Space and Extreme …, 2015
Genome-Wide Association Studies for Spot Blotch (Cochliobolus sativus) Resistance in Bread Wheat Using Genotyping-by-Sequencing
M Jamil, A Ali, A Gul, A Ghafoor, AMH Ibrahim, A Mujeeb-Kazi
Phytopathology 108 (11), 1307-1314, 2018
Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin interlayer
WE Fenwick, A Melton, T Xu, N Li, C Summers, M Jamil, IT Ferguson
Applied Physics Letters 94 (22), 222105, 2009
Phonon-assisted ultraviolet anti-Stokes photoluminescence from GaN film grown on Si (111) substrate
SK Tripathy, G Xu, X Mu, YJ Ding, M Jamil, RA Arif, N Tansu, JB Khurgin
Applied Physics Letters 93 (20), 201107, 2008
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