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Stephen Sque
Stephen Sque
Principal Scientist, NXP Semiconductors
Verified email at nxp.com - Homepage
Title
Cited by
Cited by
Year
Structure, electronics, and interaction of hydrogen and oxygen on diamond surfaces
SJ Sque, R Jones, PR Briddon
Physical review B 73 (8), 085313, 2006
3072006
Vacancy-impurity complexes and limitations for implantation doping of diamond
JP Goss, PR Briddon, MJ Rayson, SJ Sque, R Jones
Physical Review B 72 (3), 035214, 2005
1882005
Donor and acceptor states in diamond
JP Goss, PR Briddon, R Jones, S Sque
Diamond and related materials 13 (4-8), 684-690, 2004
1682004
The transfer doping of graphite and graphene
SJ Sque, R Jones, PR Briddon
physica status solidi (a) 204 (9), 3078-3084, 2007
1262007
Shallow donors in diamond: chalcogens, pnictogens, and their hydrogen complexes
SJ Sque, R Jones, JP Goss, PR Briddon
Physical Review Letters 92 (1), 017402, 2004
1012004
Boron-hydrogen complexes in diamond
JP Goss, PR Briddon, SJ Sque, R Jones
Physical Review B 69 (16), 165215, 2004
582004
The vacancy–nitrogen–hydrogen complex in diamond: a potential deep centre in chemical vapour deposited material
JP Goss, PR Briddon, R Jones, S Sque
Journal of Physics: Condensed Matter 15 (39), S2903, 2003
562003
Impact of donor traps on the 2DEG and electrical behavior of AlGaN/GaN MISFETs
G Longobardi, F Udrea, S Sque, GAM Hurkx, J Croon, E Napoli, J Šonský
IEEE electron device letters 35 (1), 27-29, 2013
532013
First-principles study of C60 and C60F36 as transfer dopants for p-type diamond
SJ Sque, R Jones, JP Goss, PR Briddon, S Öberg
Journal of Physics: Condensed Matter 17 (2), L21, 2004
422004
First-principles study of C60 and C60F36 as transfer dopants for p-type diamond
SJ Sque, R Jones, JP Goss, PR Briddon, S Öberg
Journal of Physics: Condensed Matter 17 (2), L21, 2004
422004
Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures
M Hajłasz, J Donkers, SJ Sque, SBS Heil, DJ Gravesteijn, FJR Rietveld, ...
Applied Physics Letters 104 (24), 2014
302014
Hydrogenation and oxygenation of the (100) diamond surface and the consequences for transfer doping
SJ Sque, R Jones, PR Briddon
physica status solidi (a) 202 (11), 2091-2097, 2005
302005
Carbon nanotubes and their interaction with the surface of diamond
SJ Sque, R Jones, S Öberg, PR Briddon
Physical Review B 75 (11), 115328, 2007
202007
Ab initio study of CsI and its surface
RM Ribeiro, J Coutinho, VJB Torres, R Jones, SJ Sque, S Öberg, ...
Physical Review B 74 (3), 035430, 2006
182006
High-voltage GaN-HEMT devices, simulation and modelling
S Sque
43rd European Solid-State Device Research Conference (ESSDERC 2013 …, 2013
162013
Transfer doping of diamond: The use of C60 and C60F36 to effect p-type surface conductivity
SJ Sque, R Jones, S Öberg, PR Briddon
Physica B: Condensed Matter 376, 268-271, 2006
142006
Modelling 2DEG charges in AlGaN/GaN heterostructures
G Longobardi, F Udrea, S Sque, J Croon, F Hurkx, E Napoli, J Šonský
CAS 2012 (International Semiconductor Conference) 2, 363-366, 2012
132012
The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling
G Longobardi, F Udrea, S Sque, J Croon, F Hurkx, J Šonský
2014 IEEE International Electron Devices Meeting, 17.1. 1-17.1. 4, 2014
112014
Threshold behavior of the drift region: The missing piece in LDMOS modeling
SJ Sque, AJ Scholten, ACT Aarts, DBM Klaassen
2013 IEEE International Electron Devices Meeting, 12.7. 1-12.7. 4, 2013
112013
Transfer doping of diamond: Buckminsterfullerene on hydrogenated, hydroxylated, and oxygenated diamond surfaces
SJ Sque, R Jones, S Öberg, PR Briddon
Journal of Materials Science: Materials in Electronics 17, 459-465, 2006
112006
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