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Andrea Lenz
Andrea Lenz
Institut für Festkörperphysik, Technische Universität Berlin
Verified email at physik.tu-berlin.de - Homepage
Title
Cited by
Cited by
Year
Change of InAs/GaAs quantum dot shape and composition during capping
H Eisele, A Lenz, R Heitz, R Timm, M Dähne, Y Temko, T Suzuki, K Jacobi
Journal of Applied Physics 104 (12), 124301, 2008
1262008
Reversed truncated cone composition distribution of In0. 8Ga0. 2As quantum dots overgrown by an In0. 1Ga0. 9As layer in a GaAs matrix
A Lenz, R Timm, H Eisele, C Hennig, SK Becker, RL Sellin, UW Pohl, ...
Applied physics letters 81 (27), 5150-5152, 2002
1112002
Self-organized formation of GaSb/GaAs quantum rings
R Timm, H Eisele, A Lenz, L Ivanova, G Balakrishnan, DL Huffaker, ...
Physical review letters 101 (25), 256101, 2008
812008
Structure and intermixing of GaSb∕ GaAs quantum dots
R Timm, H Eisele, A Lenz, SK Becker, J Grabowski, TY Kim, ...
Applied physics letters 85 (24), 5890-5892, 2004
712004
20 Gb/s 85C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots
F Hopfer, A Mutig, G Fiol, M Kuntz, VA Shchukin, VA Haisler, T Warming, ...
IEEE Journal of Selected Topics in Quantum Electronics 13 (5), 1302-1308, 2007
682007
Quantum ring formation and antimony segregation in nanostructures
R Timm, A Lenz, H Eisele, L Ivanova, M Dähne, G Balakrishnan, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
572008
Nanovoids in InGaAs/GaAs quantum dots observed by cross-sectional scanning tunneling microscopy
A Lenz, H Eisele, R Timm, SK Becker, RL Sellin, UW Pohl, D Bimberg, ...
Applied physics letters 85, 3848, 2004
562004
Atomic structure and optical properties of InAs submonolayer depositions in GaAs
A Lenz, H Eisele, J Becker, JH Schulze, TD Germann, F Luckert, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
532011
Direct measurement of the band gap and Fermi level position at
P Ebert, S Schaafhausen, A Lenz, A Sabitova, L Ivanova, M Daehne, ...
Applied physics letters 98 (6), 062103, 2011
512011
Direct measurement and analysis of the conduction band density of states in diluted GaAs 1− x N x alloys
L Ivanova, H Eisele, MP Vaughan, P Ebert, A Lenz, R Timm, O Schumann, ...
Physical Review B 82 (16), 161201, 2010
472010
Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs
S Harrison, MP Young, PD Hodgson, RJ Young, M Hayne, L Danos, ...
Physical Review B 93 (8), 085302, 2016
452016
Structure of InAs/GaAs quantum dots grown with Sb surfactant
R Timm, H Eisele, A Lenz, TY Kim, F Streicher, K Pötschke, UW Pohl, ...
Physica E: Low-dimensional Systems and Nanostructures 32 (1-2), 25-28, 2006
442006
Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a capping layer
O Schumann, S Birner, M Baudach, L Geelhaar, H Eisele, L Ivanova, ...
Physical Review B 71 (24), 245316, 2005
432005
Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a Ga As 1− x N x capping layer
O Schumann, S Birner, M Baudach, L Geelhaar, H Eisele, L Ivanova, ...
Physical Review B 71 (24), 245316, 2005
432005
Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs
A Lenz, H Eisele, J Becker, L Ivanova, E Lenz, F Luckert, K Pötschke, ...
Applied physics express 3 (10), 105602, 2010
382010
A. Lenz, H. Eisele, J. Becker, L. Ivanova, E. Lenz, F. Luckert, K. Pötschke, A. Strittmatter, UW Pohl, D. Bimberg, and M. Dähne, Appl. Phys. Express 3, 105602 (2010).
A Lenz
Appl. Phys. Express 3, 105602, 2010
38*2010
Atomic structure of InAs and InGaAs quantum dots determined by cross-sectional scanning tunneling microscopy
H Eisele, A Lenz, C Hennig, R Timm, M Ternes, M Dähne
Journal of crystal growth 248, 322-327, 2003
352003
Confined States of Individual Type-II GaSb/GaAs Quantum Rings Studied by Cross-Sectional Scanning Tunneling Spectroscopy
R Timm, H Eisele, A Lenz, L Ivanova, V Vosseburger, T Warming, ...
Nano letters 10 (10), 3972-3977, 2010
342010
Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters
NN Ledentsov, F Hopfer, A Mutig, VA Shchukin, AV Savel'ev, G Fiol, ...
Physics and Simulation of Optoelectronic Devices XV 6468, 64681O, 2007
322007
Growth of In0. 25Ga0. 75As quantum dots on GaP utilizing a GaAs interlayer
G Stracke, A Glacki, T Nowozin, L Bonato, S Rodt, C Prohl, A Lenz, ...
Applied Physics Letters 101 (22), 223110, 2012
272012
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