Young Gon Lee
Young Gon Lee
SK hynix
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Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics
YG Lee, CG Kang, UJ Jung, JJ Kim, HJ Hwang, HJ Chung, S Seo, R Choi, ...
Applied Physics Letters 98 (18), 183508, 2011
Effects of multi-layer graphene capping on Cu interconnects
CG Kang, SK Lim, S Lee, SK Lee, C Cho, YG Lee, HJ Hwang, Y Kim, ...
Nanotechnology 24 (11), 115707, 2013
Quantitative analysis of hysteretic reactions at the interface of graphene and SiO 2 using the short pulse I–V method
YG Lee, CG Kang, C Cho, Y Kim, HJ Hwang, BH Lee
Carbon 60, 453-460, 2013
Mechanism of the effects of low temperature Al 2 O 3 passivation on graphene field effect transistors
CG Kang, YG Lee, SK Lee, E Park, C Cho, SK Lim, HJ Hwang, BH Lee
Carbon 53, 182-187, 2013
Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack
W Park, JH Yang, CG Kang, YG Lee, HJ Hwang, C Cho, SK Lim, SC Kang, ...
Nanotechnology 24 (47), 475501, 2013
Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask
CG Kang, JW Kang, SK Lee, SY Lee, CH Cho, HJ Hwang, YG Lee, J Heo, ...
Nanotechnology 22 (29), 295201, 2011
Graphene transfer in vacuum yielding a high quality graphene
S Lee, SK Lee, CG Kang, C Cho, YG Lee, U Jung, BH Lee
Carbon 93, 286-294, 2015
Ferroelectric polymer-gated graphene memory with high speed conductivity modulation
HJ Hwang, JH Yang, YG Lee, C Cho, CG Kang, SC Kang, W Park, ...
Nanotechnology 24 (17), 175202, 2013
Intrinsic photocurrent characteristics of graphene photodetectors passivated with Al 2 O 3
CG Kang, SK Lee, S Choe, YG Lee, CL Lee, BH Lee
Optics express 21 (20), 23391-23400, 2013
A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors
YJ Kim, YG Lee, U Jung, S Lee, SK Lee, BH Lee
Nanoscale 7 (9), 4013-4019, 2015
A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From , , and Measurements
A Padovani, B Kaczer, M Pešić, A Belmonte, M Popovici, L Nyns, D Linten, ...
IEEE Transactions on Electron Devices 66 (4), 1892-1898, 2019
Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment
CG Kang, SK Lee, YG Lee, HJ Hwang, C Cho, SK Lim, J Heo, HJ Chung, ...
Electron Device Letters, IEEE 32 (11), 1591-1593, 2011
Electrodeposition of the Sn-58 wt.% Bi layer for low-temperature soldering
YG Lee, JG Park, CW Lee, JP Jung
Metals and Materials International 17 (1), 117-121, 2011
Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate
S Lee, OD Iyore, S Park, YG Lee, S Jandhyala, CG Kang, G Mordi, Y Kim, ...
Carbon 68, 791-797, 2014
Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors
YG Lee, YJ Kim, CG Kang, C Cho, S Lee, HJ Hwang, U Jung, BH Lee
Applied Physics Letters 102 (9), 093121, 2013
A study of the leakage current in TiN/HfO 2/TiN capacitors
S Cimino, A Padovani, L Larcher, VV Afanas’ev, HJ Hwang, YG Lee, ...
Microelectronic Engineering 95, 71-73, 2012
Quantitatively estimating defects in graphene devices using discharge current analysis method
U Jung, YG Lee, CG Kang, S Lee, JJ Kim, HJ Hwang, SK Lim, MH Ham, ...
Scientific reports 4, 2014
Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices
SK Lee, CG Kang, YG Lee, C Cho, E Park, HJ Chung, S Seo, HD Lee, ...
Carbon 50 (11), 4046-4051, 2012
Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs
JJ Kim, M Cho, L Pantisano, U Jung, YG Lee, T Chiarella, M Togo, ...
Electron Device Letters, IEEE 33 (7), 937-939, 2012
Issues with the electrical characterization of graphene devices
BH Lee, YG Lee, UJ Jung, CG Kang, HJ Hwang, JJ Kim, YH Kim
Carbon letters 13 (1), 23-28, 2012
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