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Germanium-vacancy single color centers in diamond
T Iwasaki, F Ishibashi, Y Miyamoto, Y Doi, S Kobayashi, T Miyazaki, ...
Scientific reports 5 (1), 12882, 2015
Tin-vacancy quantum emitters in diamond
T Iwasaki, Y Miyamoto, T Taniguchi, P Siyushev, MH Metsch, F Jelezko, ...
Physical review letters 119 (25), 253601, 2017
Excimer laser-induced temperature field in melting and resolidification of silicon thin films
M Hatano, S Moon, M Lee, K Suzuki, CP Grigoropoulos
Journal of Applied Physics 87 (1), 36-43, 2000
Semiconductor device and method for manufacturing the same
T Kawamura, T Sato, M Hatano, H Uchiyama
US Patent 7,977,675, 2011
Laser annealing apparatus, TFT device and annealing method of the same
M Hongo, S Uto, M Nomoto, T Nakata, M Hatano, S Yamaguchi, M Ohkura
US Patent 6,943,086, 2005
Perfect selective alignment of nitrogen-vacancy centers in diamond
T Fukui, Y Doi, T Miyazaki, Y Miyamoto, H Kato, T Matsumoto, T Makino, ...
Applied Physics Express 7 (5), 055201, 2014
Semiconductor memory device and manufacturing method thereof
Y Sasago, R Takemura, M Kinoshita, T Mine, A Shima, H Matsuoka, ...
US Patent App. 12/430,539, 2009
Photoluminescence excitation spectroscopy of SiV− and GeV− color center in diamond
S Häußler, G Thiering, A Dietrich, N Waasem, T Teraji, J Isoya, T Iwasaki, ...
New Journal of Physics 19 (6), 063036, 2017
Magnetometer with nitrogen-vacancy center in a bulk diamond for detecting magnetic nanoparticles in biomedical applications
A Kuwahata, T Kitaizumi, K Saichi, T Sato, R Igarashi, T Ohshima, ...
Scientific reports 10 (1), 2483, 2020
Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
M Hatano, S Yamaguchi, Y Kimura, SK Park
US Patent 6,756,614, 2004
Direct nanoscale sensing of the internal electric field in operating semiconductor devices using single electron spins
T Iwasaki, W Naruki, K Tahara, T Makino, H Kato, M Ogura, D Takeuchi, ...
ACS nano 11 (2), 1238-1245, 2017
Method for manufacturing display device
T Hattori, T Kuranaga, N Okada, M Hatano
US Patent App. 13/114,074, 2011
Thermal conductivity of amorphous silicon thin films
S Moon, M Hatano, M Lee, CP Grigoropoulos
International Journal of Heat and Mass Transfer 45 (12), 2439-2447, 2002
A novel self-aligned gate-overlapped LDD poly-Si TFT with high reliability and performance
M Hatano, H Akimoto, T Sakai
International Electron Devices Meeting. IEDM Technical Digest, 523-526, 1997
Spectroscopic investigations of negatively charged tin-vacancy centres in diamond
J Görlitz, D Herrmann, G Thiering, P Fuchs, M Gandil, T Iwasaki, ...
New Journal of Physics 22 (1), 013048, 2020
Display device
T Kawamura, T Sato, M Hatano
US Patent 7,737,517, 2010
600 V Diamond Junction Field-Effect Transistors Operated at 200
T Iwasaki, J Yaita, H Kato, T Makino, M Ogura, D Takeuchi, H Okushi, ...
IEEE Electron Device Letters 35 (2), 241-243, 2013
Thin film crystal growth by laser annealing
CP Grigoropoulos, M Hatano, MH Lee, SJ Moon
US Patent 6,451,631, 2002
Relationship between fluence gradient and lateral grain growth in spatially controlled excimer laser crystallization of amorphous silicon films
M Lee, S Moon, M Hatano, K Suzuki, CP Grigoropoulos
Journal of applied physics 88 (9), 4994-4999, 2000
Diamond junction field-effect transistors with selectively grown n+-side gates
T Iwasaki, Y Hoshino, K Tsuzuki, H Kato, T Makino, M Ogura, D Takeuchi, ...
Applied physics express 5 (9), 091301, 2012
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