Seong Kwang Kim
Seong Kwang Kim
Samsung Electronics
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Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding interface-engineered vertical stacking and surface passivation
SHK D-M Geum, SK Kim, C-M Kang, S-H Moon, J Kyhm, JH Han, D-S Lee
Nanoscale 48 (11), 23139-23148, 2019
Bioinspired photoresponsive single transistor neuron for a neuromorphic visual system
JK Han, DM Geum, MW Lee, JM Yu, SK Kim, S Kim, YK Choi
Nano Letters 20 (12), 8781-8788, 2020
Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge Materials
HJK S.-H. Kim, S. K. Kim, J.-P. Shim, D.-M. Geum, G. W. Ju, H.-S. Kim, H.-J ...
IEEE J. Electron Devices Soc. 6, 579-587, 2018
Substrate and layout engineering to suppress self-heating in floating body transistors
SH Shin, SH Kim, S Kim, H Wu, PD Ye, MA Alam
2016 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2016
Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems
DM Geum, SH Kim, SK Kim, SS Kang, JH Kyhm, J Song, WJ Choi, E Yoon
Scientific Reports 9 (1), 18661, 2019
Fabrication and characterization of Pt/Al2O3/Y2O3/In0. 53Ga0. 47As MOSFETs with low interface trap density
SK Kim, DM Geum, JP Shim, CZ Kim, H Kim, JD Song, WJ Choi, SJ Choi, ...
Applied Physics Letters 110 (4), 2017
Stackable InGaAs-on-insulator HEMTs for monolithic 3-D integration
J Jeong, SK Kim, J Kim, DM Geum, J Park, JH Jang, S Kim
IEEE Transactions on Electron Devices 68 (5), 2205-2211, 2021
3D stackable synaptic transistor for 3D integrated artificial neural networks
SK Kim, YJ Jeong, P Bidenko, HR Lim, YR Jeon, H Kim, YJ Lee, ...
ACS applied materials & interfaces 12 (6), 7372-7380, 2020
Highly stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for monolithic 3-D integration of InGaAs MOSFETs
S Kim, SK Kim, S Shin, JH Han, DM Geum, JP Shim, S Lee, H Kim, G Ju, ...
IEEE Journal of the Electron Devices Society 7, 869-877, 2019
Fabrication of InGaAs-on-insulator substrates using direct wafer-bonding and epitaxial lift-off techniques
SK Kim, JP Shim, DM Geum, CZ Kim, HS Kim, JD Song, SJ Choi, DH Kim, ...
IEEE Transactions on Electron Devices 64 (9), 3601-3608, 2017
Monolithic 3D integration of InGaAs photodetectors on Si MOSFETs using sequential fabrication process
DM Geum, SK Kim, S Lee, D Lim, HJ Kim, CH Choi, SH Kim
IEEE Electron Device Letters 41 (3), 433-436, 2020
Heterogeneous and monolithic 3D integration of III–V-based radio frequency devices on Si CMOS circuits
J Jeong, SK Kim, J Kim, DM Geum, D Kim, E Jo, H Jeong, J Park, JH Jang, ...
ACS nano 16 (6), 9031-9040, 2022
Photo-responsible synapse using Ge synaptic transistors and GaAs photodetectors
SK Kim, DM Geum, HR Lim, JH Han, H Kim, YJ Jeong, SH Kim
IEEE Electron Device Letters 41 (4), 605-608, 2020
Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With …
SK S. K. Kim, J.-P. Shim, D.-M. Geum, J. Kim, C. Z. Kim, H.-S. Kim, J. D ...
IEEE Trans. Electron Devices 65 (5), 1862-1867, 2018
Cost-effective fabrication of In0.53Ga0.47As-on-insulator on Si for monolithic 3D via novel epitaxial lift-off (ELO) and donor wafer re-use
SK Kim, J Shim, DM Geum, CZ Kim, HS Kim, YS Kim, HK Kang, JD Song, ...
2016 IEEE International Electron Devices Meeting (IEDM), 25.4. 1-25.4. 4, 2016
Modeling and characterization of the abnormal hump in n-channel amorphous-InGaZnO thin-film transistors after high positive bias stress
J Lee, S Choi, SK Kim, SJ Choi, DH Kim, J Park, DM Kim
IEEE Electron Device Letters 36 (10), 1047-1049, 2015
Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si
HJK J.-P. Shim, S. K. Kim, H. Kim, G. Ju, H. Lim, S. Kim
APL Materials 6, 016103, 2018
Impact of bottom-gate biasing on implant-free junctionless Ge-on-insulator n-MOSFETs
HR Lim, SK Kim, JH Han, H Kim, DM Geum, YJ Lee, BK Ju, HJ Kim, S Kim
IEEE Electron Device Letters 40 (9), 1362-1365, 2019
Vertical InGaAs biristor for sub-1 V operation
WK Kim, P Bidenko, J Kim, J Sim, JK Han, S Kim, DM Geum, S Kim, ...
IEEE Electron Device Letters 42 (5), 681-683, 2021
Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors
DMK H. Lee, J. Kim, J. Kim, S. K. Kim, Y. Lee, J.-Y Kim, J. T. Jang, J. Park ...
IEEE Electron Device Lett. 38 (5), 584-587, 2017
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