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Robert PLANA
Robert PLANA
ASSYSTEM
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Titel
Zitiert von
Zitiert von
Jahr
The green blockchain: Managing decentralized energy production and consumption
F Imbault, M Swiatek, R de Beaufort, R Plana
2017 IEEE International Conference on Environment and Electrical Engineering …, 2017
2702017
Terahertz antenna based on graphene
M Dragoman, AA Muller, D Dragoman, F Coccetti, R Plana
Journal of Applied Physics 107 (10), 2010
2332010
Reliability modeling of capacitive RF MEMS
S Melle, D De Conto, D Dubuc, K Grenier, O Vendier, JL Muraro, ...
IEEE Transactions on Microwave Theory and Techniques 53 (11), 3482-3488, 2005
1272005
Graphene for microwaves
M Dragoman, D Neculoiu, D Dragoman, G Deligeorgis, G Konstantinidis, ...
IEEE Microwave Magazine 11 (7), 81-86, 2010
1242010
Evaluation of noise parameter extraction methods
L Escotte, R Plana, J Graffeuil
IEEE transactions on microwave theory and techniques 41 (3), 382-387, 1993
1241993
Microwave propagation in graphene
G Deligeorgis, M Dragoman, D Neculoiu, D Dragoman, G Konstantinidis, ...
Applied Physics Letters 95 (7), 2009
1012009
Load and renewable energy forecasting for a microgrid using persistence technique
S Dutta, Y Li, A Venkataraman, LM Costa, T Jiang, R Plana, P Tordjman, ...
Energy Procedia 143, 617-622, 2017
982017
Noise modeling of microwave heterojunction bipolar transistors
L Escotte, JP Roux, R Plana, J Graffeuil, A Gruhle
IEEE Transactions on electron devices 42 (5), 883-889, 1995
961995
Micromachined loop antennas on low resistivity silicon substrates
E Ojefors, H Kratz, K Grenier, R Plana, A Rydberg
IEEE Transactions on antennas and propagation 54 (12), 3593-3601, 2006
892006
Millimeter-wave generation via frequency multiplication in graphene
M Dragoman, D Neculoiu, G Deligeorgis, G Konstantinidis, D Dragoman, ...
Applied Physics Letters 97 (9), 2010
882010
Transistor noise in SiGe HBT RF technology
G Niu, JD Cressler, Z Jin, S Zhang, JB Juraver, M Borgarino, R Plana, ...
Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat …, 2000
822000
Dielectric charging in silicon nitride films for MEMS capacitive switches: Effect of film thickness and deposition conditions
U Zaghloul, G Papaioannou, F Coccetti, P Pons, R Plana
Microelectronics Reliability 49 (9-11), 1309-1314, 2009
782009
Voltage and temperature effect on dielectric charging for RF-MEMS capacitive switches reliability investigation
M Lamhamdi, P Pons, U Zaghloul, L Boudou, F Coccetti, J Guastavino, ...
Microelectronics Reliability 48 (8-9), 1248-1252, 2008
772008
Novel design of a highly sensitive RF strain transducer for passive and remote sensing in two dimensions
TT Thai, H Aubert, P Pons, G DeJean, MM Tentzeris, R Plana
IEEE Transactions on Microwave Theory and Techniques 61 (3), 1385-1396, 2013
742013
On the reliability of electrostatic NEMS/MEMS devices: Review of present knowledge on the dielectric charging and stiction failure mechanisms and novel characterization …
U Zaghloul, G Papaioannou, B Bhushan, F Coccetti, P Pons, R Plana
Microelectronics Reliability 51 (9-11), 1810-1818, 2011
732011
Writing simple RF electronic devices on paper with carbon nanotube ink
M Dragoman, E Flahaut, D Dragoman, M Al Ahmad, R Plana
Nanotechnology 20 (37), 375203, 2009
722009
Reversible metal-semiconductor transitions for microwave switching applications
M Dragoman, A Cismaru, H Hartnagel, R Plana
Applied Physics Letters 88 (7), 2006
672006
Low-frequency noise properties of SiGe HBT's and application to ultra-low phase-noise oscillators
B Van Haaren, M Regis, O Llopis, L Escotte, A Gruhle, C Mahner, R Plana, ...
IEEE Transactions on Microwave Theory and Techniques 46 (5), 647-652, 1998
641998
Small-signal and noise model extraction technique for heterojunction bipolar transistor at microwave frequencies
JP Roux, L Escotte, R Plana, J Graffeuil, SL Delage, H Blanck
IEEE transactions on microwave theory and techniques 43 (2), 293-298, 1995
641995
Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMTs from 10 Hz to 18 GHz
R Plana, L Escotte, O Llopis, H Amine, T Parra, M Gayral, J Graffeuil
IEEE transactions on electron devices 40 (5), 852-858, 1993
631993
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