| Improvement of Al2O3 Films on Graphene Grown by Atomic Layer Deposition with Pre-H2O Treatment L Zheng, X Cheng, D Cao, G Wang, Z Wang, D Xu, C Xia, L Shen, Y Yu, ... ACS applied materials & interfaces 6 (10), 7014-7019, 2014 | 98 | 2014 |
| Ambipolar graphene–quantum dot phototransistors with CMOS compatibility L Zheng, W Zhou, Z Ning, G Wang, X Cheng, W Hu, W Zhou, Z Liu, ... Advanced Optical Materials 6 (23), 1800985, 2018 | 58 | 2018 |
| Improvement of SOI trench LDMOS performance with double vertical metal field plate C Xia, X Cheng, Z Wang, D Xu, D Cao, L Zheng, L Shen, Y Yu, D Shen IEEE Transactions on Electron Devices 61 (10), 3477-3482, 2014 | 47 | 2014 |
| Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures D Cao, X Cheng, YH Xie, L Zheng, Z Wang, X Yu, J Wang, D Shen, Y Yu RSC Advances 5 (47), 37881-37886, 2015 | 45 | 2015 |
| High quality silicon: colloidal quantum dot heterojunction based infrared photodetector X Xiao, K Xu, M Yin, Y Qiu, W Zhou, L Zheng, X Cheng, Y Yu, Z Ning Applied Physics Letters 116 (10), 2020 | 42 | 2020 |
| Fluorinated Graphene in Interface Engineering of Ge‐Based Nanoelectronics X Zheng, M Zhang, X Shi, G Wang, L Zheng, Y Yu, A Huang, PK Chu, ... Advanced Functional Materials 25 (12), 1805-1813, 2015 | 42 | 2015 |
| Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition L Zheng, X Cheng, D Cao, Z Wang, C Xia, Y Yu, D Shen Applied Physics Letters 104 (2), 2014 | 42 | 2014 |
| Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al 2 O 3 Q Wang, X Cheng, L Zheng, L Shen, J Li, D Zhang, R Qian, Y Yu RSC advances 7 (19), 11745-11751, 2017 | 41 | 2017 |
| Controlled direct growth of Al 2 O 3-doped HfO 2 films on graphene by H 2 O-based atomic layer deposition L Zheng, X Cheng, Y Yu, Y Xie, X Li, Z Wang Physical Chemistry Chemical Physics 17 (5), 3179-3185, 2015 | 31 | 2015 |
| Silicon: Quantum dot photovoltage triodes W Zhou, L Zheng, Z Ning, X Cheng, F Wang, K Xu, R Xu, Z Liu, M Luo, ... Nature Communications 12 (1), 6696, 2021 | 27 | 2021 |
| Direct growth of sb 2 te 3 on graphene by atomic layer deposition L Zheng, X Cheng, D Cao, Q Wang, Z Wang, C Xia, L Shen, Y Yu, D Shen RSC Advances 5 (50), 40007-40011, 2015 | 26 | 2015 |
| Reliability improvement of GaN devices on free-standing GaN substrates D Zhang, X Cheng, WT Ng, L Shen, L Zheng, Q Wang, R Qian, Z Gu, ... IEEE Transactions on Electron Devices 65 (8), 3379-3387, 2018 | 21 | 2018 |
| One-pot self-templated growth of gold nanoframes for enhanced surface-enhanced Raman scattering performance P Ye, W Xin, IM De Rosa, Y Wang, MS Goorsky, L Zheng, X Yin, YH Xie ACS applied materials & interfaces 12 (19), 22050-22057, 2020 | 20 | 2020 |
| Performance Improvement and Current Collapse Suppression of Al2O3/AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation L Shen, D Zhang, X Cheng, L Zheng, D Xu, Q Wang, J Li, D Cao, Y Yu IEEE Electron Device Letters 38 (5), 596-599, 2017 | 20 | 2017 |
| Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si D Cao, X Cheng, L Zheng, D Xu, Z Wang, C Xia, L Shen, Y Yu, DS Shen Journal of Vacuum Science & Technology B 33 (1), 2015 | 20 | 2015 |
| Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy Q Wang, X Cheng, L Zheng, L Shen, D Zhang, Z Gu, R Qian, D Cao, Y Yu Applied Surface Science 428, 1-6, 2018 | 17 | 2018 |
| Low temperature growth of three-dimensional network of graphene for high-performance supercapacitor electrodes L Zheng, X Cheng, P Ye, L Shen, Q Wang, D Zhang, Z Gu, W Zhou, D Wu, ... Materials Letters 218, 90-94, 2018 | 16 | 2018 |
| Growth of controlled thickness graphene by ion implantation for field-effect transistor G Wang, G Ding, Y Zhu, D Chen, L Ye, L Zheng, M Zhang, Z Di, S Liu Materials letters 107, 170-173, 2013 | 16 | 2013 |
| Effects of polycrystalline AlN film on the dynamic performance of AlGaN/GaN high electron mobility transistors D Zhang, X Cheng, L Zheng, L Shen, Q Wang, Z Gu, R Qian, D Wu, ... Materials & Design 148, 1-7, 2018 | 15 | 2018 |
| Large photomultiplication by charge-self-trapping for high-response quantum dot infrared photodetectors K Xu, L Ke, H Dou, R Xu, W Zhou, Q Wei, X Sun, H Wang, H Wu, L Li, ... ACS Applied Materials & Interfaces 14 (12), 14783-14790, 2022 | 13 | 2022 |
Gang WangNingbo University, Lanzhou University, Shanghai Institute of Microsystem and InformationVerified email at nbu.edu.cn
