| Oxygen defect processes in silicon and silicon germanium A Chroneos, EN Sgourou, CA Londos, U Schwingenschlögl Applied Physics Reviews 2 (2), 2015 | 83 | 2015 |
| Point defect engineering strategies to suppress A-center formation in silicon A Chroneos, CA Londos, EN Sgourou, P Pochet Applied Physics Letters 99 (24), 2011 | 82 | 2011 |
| Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si EN Sgourou, D Timerkaeva, CA Londos, D Aliprantis, A Chroneos, ... Journal of Applied Physics 113 (11), 2013 | 72 | 2013 |
| Effect of tin doping on oxygen-and carbon-related defects in Czochralski silicon A Chroneos, CA Londos, EN Sgourou Journal of Applied Physics 110 (9), 2011 | 69 | 2011 |
| Interaction of A-centers with isovalent impurities in silicon A Chroneos, CA Londos Journal of Applied Physics 107 (9), 2010 | 65 | 2010 |
| Carbon related defects in irradiated silicon revisited H Wang, A Chroneos, CA Londos, EN Sgourou, U Schwingenschlögl Scientific reports 4 (1), 4909, 2014 | 53 | 2014 |
| Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium CA Londos, A Andrianakis, VV Emtsev, H Ohyama Semiconductor science and technology 24 (7), 075002, 2009 | 46 | 2009 |
| A-centers in silicon studied with hybrid density functional theory H Wang, A Chroneos, CA Londos, EN Sgourou, U Schwingenschlögl Applied Physics Letters 103 (5), 2013 | 43 | 2013 |
| Vacancy-oxygen defects in silicon: the impact of isovalent doping CA Londos, EN Sgourou, D Hall, A Chroneos Journal of Materials Science: Materials in Electronics 25, 2395-2410, 2014 | 38 | 2014 |
| Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing CA Londos, A Andrianakis, V Emtsev, H Ohyama Journal of Applied Physics 105 (12), 2009 | 37 | 2009 |
| Carbon-related radiation damage centres and processes in p-type Si CA Londos Semiconductor science and technology 5 (7), 645, 1990 | 36 | 1990 |
| IR studies of the impact of Ge doping on the successive conversion of VOn defects in Czochralski-Si containing carbon CA Londos, A Andrianakis, EN Sgourou, VV Emtsev, H Ohyama Journal of Applied Physics 109 (3), 2011 | 33 | 2011 |
| A-centers and isovalent impurities in germanium: Density functional theory calculations A Chroneos, CA Londos, H Bracht Materials Science and Engineering: B 176 (5), 453-457, 2011 | 32 | 2011 |
| Room‐temperature irradiation of p‐type Silicon CA Londos physica status solidi (a) 92 (2), 609-614, 1985 | 31 | 1985 |
| Formation and evolution of oxygen-vacancy clusters in lead and tin doped silicon CA Londos, D Aliprantis, EN Sgourou, A Chroneos, P Pochet Journal of Applied Physics 111 (12), 2012 | 30 | 2012 |
| The CiCs (SiI) defect in silicon: An infrared spectroscopy study MS Potsidi, CA Londos Journal of applied physics 100 (3), 2006 | 27 | 2006 |
| Carbon, oxygen and intrinsic defect interactions in germanium-doped silicon CA Londos, EN Sgourou, A Chroneos, VV Emtsev Semiconductor science and technology 26 (10), 105024, 2011 | 24 | 2011 |
| Isochronal annealing studies of carbon-related defects in irradiated Si CA Londos, MS Potsidi, GD Antonaras, A Andrianakis Physica B: Condensed Matter 376, 165-168, 2006 | 24 | 2006 |
| G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach H Wang, A Chroneos, CA Londos, EN Sgourou, U Schwingenschlögl Journal of Applied Physics 115 (18), 2014 | 23 | 2014 |
| Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective CA Londos, EN Sgourou, A Chroneos Journal of Applied Physics 112 (12), 2012 | 22 | 2012 |
