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Collin Delker
Collin Delker
Bestätigte E-Mail-Adresse bei sandia.gov
Titel
Zitiert von
Zitiert von
Jahr
Understanding the Effects of Cationic Dopants on α-MnO2 Oxygen Reduction Reaction Electrocatalysis
TN Lambert, JA Vigil, SE White, CJ Delker, DJ Davis, M Kelly, ...
The Journal of Physical Chemistry C 121 (5), 2789-2797, 2017
872017
Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors
Y Zhao, D Candebat, C Delker, Y Zi, D Janes, J Appenzeller, C Yang
Nano letters 12 (10), 5331-5336, 2012
632012
Low-frequency noise in MoSe2 field effect transistors
SR Das, J Kwon, A Prakash, CJ Delker, S Das, DB Janes
Applied Physics Letters 106 (8), 2015
602015
Room temperature device performance of electrodeposited InSb nanowire field effect transistors
SR Das, CJ Delker, D Zakharov, YP Chen, TD Sands, DB Janes
Applied Physics Letters 98 (24), 2011
562011
Nanoscale Carbon Modified α-MnO2 Nanowires: Highly Active and Stable Oxygen Reduction Electrocatalysts with Low Carbon Content
JA Vigil, TN Lambert, J Duay, CJ Delker, TE Beechem, BS Swartzentruber
ACS applied materials & interfaces 10 (2), 2040-2050, 2018
412018
Introduction to statistics in metrology
S Crowder, C Delker, E Forrest, N Martin
Springer, 2020
312020
Low-frequency noise contributions from channel and contacts in InAs nanowire transistors
CJ Delker, Y Zi, C Yang, DB Janes
IEEE transactions on electron devices 60 (9), 2900-2905, 2013
312013
Oxygen plasma exposure effects on indium oxide nanowire transistors
S Kim, C Delker, P Chen, C Zhou, S Ju, DB Janes
Nanotechnology 21 (14), 145207, 2010
202010
1/f noise sources in dual-gated indium arsenide nanowire transistors
CJ Delker, S Kim, M Borg, LE Wernersson, DB Janes
IEEE transactions on electron devices 59 (7), 1980-1987, 2012
182012
Current and noise properties of InAs nanowire transistors with asymmetric contacts induced by gate overlap
CJ Delker, Y Zi, C Yang, DB Janes
IEEE Transactions on Electron Devices 61 (3), 884-889, 2014
122014
Molybdenum Contacts to MoS2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise
J Kwon, CJ Delker, DB Janes, CT Harris, SR Das
physica status solidi (a) 217 (17), 1900880, 2020
72020
Transitions between channel and contact regimes of low-frequency noise in many-layer MoS2 field effect transistors
J Kwon, JH Park, CJ Delker, CT Harris, B Swartzentruber, SR Das, ...
Applied Physics Letters 114 (11), 2019
72019
Evaluating risk in an abnormal world: how arbitrary probability distributions affect false accept and reject evaluation.
CJ Delker
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2020
62020
Calculating interval uncertainties for calibration standards that drift with time
CJ Delker, EC Auden, OM Solomon
NCSLI Measure 12 (4), 9-20, 2018
62018
Experimental and modeling study of 1/f noise in multilayer MoS2 and MoSe2 field-effect transistors
J Kwon, CJ Delker, C Thomas Harris, SR Das, DB Janes
Journal of Applied Physics 128 (9), 2020
52020
Monte Carlo methods for the propagation of uncertainties
S Crowder, C Delker, E Forrest, N Martin, S Crowder, C Delker, E Forrest, ...
Introduction to statistics in metrology, 153-180, 2020
42020
High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts
AK Behera, CT Harris, DV Pete, CJ Delker, PE Vullum, MB Muniz, ...
ACS Applied Electronic Materials 3 (9), 4126-4134, 2021
22021
Exploration of a data-enhanced calibration certificate as part of a complete measurement information infrastructure.
CJ Delker, A Robinson, MJ Roberts
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2020
22020
Temperature dependence of current and low-frequency noise in InAs nanowire transistors
CJ Delker, Y Zi, C Yang, DB Janes
71st Device Research Conference, 57-58, 2013
22013
A guardbanding method for managing false accept risk under process bias.
C Delker, II Peguero
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2022
12022
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