Collin Delker
Collin Delker
Bestätigte E-Mail-Adresse bei sandia.gov
Titel
Zitiert von
Zitiert von
Jahr
Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors
Y Zhao, D Candebat, C Delker, Y Zi, D Janes, J Appenzeller, C Yang
Nano letters 12 (10), 5331-5336, 2012
512012
Low-frequency noise in MoSe2 field effect transistors
SR Das, J Kwon, A Prakash, CJ Delker, S Das, DB Janes
Applied Physics Letters 106 (8), 083507, 2015
462015
Understanding the Effects of Cationic Dopants on α-MnO2 Oxygen Reduction Reaction Electrocatalysis
TN Lambert, JA Vigil, SE White, CJ Delker, DJ Davis, M Kelly, ...
The Journal of Physical Chemistry C 121 (5), 2789-2797, 2017
442017
Room temperature device performance of electrodeposited InSb nanowire field effect transistors
SR Das, CJ Delker, D Zakharov, YP Chen, TD Sands, DB Janes
Applied Physics Letters 98 (24), 243504, 2011
402011
Low-frequency noise contributions from channel and contacts in InAs nanowire transistors
CJ Delker, Y Zi, C Yang, DB Janes
IEEE transactions on electron devices 60 (9), 2900-2905, 2013
262013
Nanoscale Carbon Modified α-MnO2 Nanowires: Highly Active and Stable Oxygen Reduction Electrocatalysts with Low Carbon Content
JA Vigil, TN Lambert, J Duay, CJ Delker, TE Beechem, BS Swartzentruber
ACS applied materials & interfaces 10 (2), 2040-2050, 2018
192018
Oxygen plasma exposure effects on indium oxide nanowire transistors
S Kim, C Delker, P Chen, C Zhou, S Ju, DB Janes
Nanotechnology 21 (14), 145207, 2010
182010
1/f noise sources in dual-gated indium arsenide nanowire transistors
CJ Delker, S Kim, M Borg, LE Wernersson, DB Janes
IEEE transactions on electron devices 59 (7), 1980-1987, 2012
142012
Current and noise properties of InAs nanowire transistors with asymmetric contacts induced by gate overlap
CJ Delker, Y Zi, C Yang, DB Janes
IEEE Transactions on Electron Devices 61 (3), 884-889, 2014
92014
Transitions between channel and contact regimes of low-frequency noise in many-layer MoS2 field effect transistors
J Kwon, JH Park, CJ Delker, CT Harris, B Swartzentruber, SR Das, ...
Applied Physics Letters 114 (11), 113502, 2019
22019
Temperature dependence of current and low-frequency noise in InAs nanowire transistors
CJ Delker, Y Zi, C Yang, DB Janes
71st Device Research Conference, 57-58, 2013
22013
Dual-gate operation and carrier transport in SiGe p–n junction nanowires
CJ Delker, JY Yoo, E Bussmann, BS Swartzentruber, CT Harris
Nanotechnology 28 (46), 46LT01, 2017
12017
Low-frequency noise in contact and channel regions of ambipolar InAs nanowire transistors
CJ Delker, Y Zi, C Yang, DB Janes
70th Device Research Conference, 189-190, 2012
12012
Molybdenum Contacts to MoS2 Field Effect Transistors: Schottky Barrier Extraction, Electrical Transport and Low‐Frequency Noise
J Kwon, CJ Delker, DB Janes, CT Harris, SR Das
physica status solidi (a), 0
1
Position-Dependent Transport of npn Junctions in Axially Doped SiGe Nanowire Transistors
CJ Delker, J Yoo, BS Swartzentruber, CT Harris
IEEE Electron Device Letters 40 (5), 686-689, 2019
2019
PSL Uncertainty Calculator v. 1.2
C Delker
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2019
2019
Method and apparatus of enhanced thermoelectric cooling and power conversion
IF El-Kady, CM Reinke, RH Olsson, BS Swartzentruber, CJ Delker, J Yoo
US Patent 10,072,879, 2018
2018
Calculating Interval Uncertainties for Calibration Standards That Drift with Time.
CJ Delker
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2018
2018
Comparison of Electrical and 1/f Noise properties of MoS2 and MoSe2 FETs.
J Kwon, CJ Delker, CT Harris, B Swartzentruber, SR Das, DB Janes
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States); Sandia …, 2018
2018
Understanding channel and contact effects on transport in 1-dimensional nanotransistors.
BS Swartzentruber, CJ Delker, J Yoo, DB Janes
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2015
2015
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